36 pieces of 4 inches graphite base MOCVD equipment parts

● Product introduction and use: Placing 36 pieces of 4 inch substrate, used for the growth of blue-green epitaxial films in LED production
● Device location of the product: in the reaction chamber, in direct contact with the wafer
● Main downstream products: LED chips
● Main end market: LED

Description

 

 

 

 

 

Our company provides SiC coating process services by CVD method on the surface of graphite, ceramics and other materials, so that special gases containing carbon and silicon react at high temperature to obtain high purity SiC molecules, molecules deposited on the surface of the coated materials, forming SIC protective layer.

 

 

 

 

 

 

Graphite base--36

 

 

 

 

 

 

 

 

 

Main Features

 

 

 

 

 

1. High temperature oxidation resistance:
the oxidation resistance is still very good when the temperature is as high as 1600 C.
2. High purity: made by chemical vapor deposition under high temperature chlorination condition.
3. Erosion resistance: high hardness, compact surface, fine particles.
4. Corrosion resistance: acid, alkali, salt and organic reagents.

 

 

 

 

 

 

 

 

 

Main Specifications of CVD-SIC Coating

 

 

 

 

 

SiC-CVD Properties
Crystal Structure FCC β phase
Density g/cm ³ 3.21
Hardness Vickers hardness 2500
Grain Size μm 2~10
Chemical Purity % 99.99995
Heat Capacity J·kg-1 ·K-1 640
Sublimation Temperature 2700
Felexural Strength MPa  (RT 4-point) 415
Young’ s Modulus Gpa (4pt bend, 1300℃) 430
Thermal Expansion (C.T.E) 10-6K-1 4.5
Thermal conductivity (W/mK) 300

 

 

 

 

 

 

 

 

Semicera Work place

 

 

 

Semicera work place 2

 

 

 

Equipment machine

 

 

 

CNN processing, chemical cleaning, CVD coating

 

 

 

Semicera Ware House

 

 

 

Our service

 

 

 

 

 

 

 

 

 

Newletter

Looking forward to your contact with us