CVD-SiC coating features a uniform microstructure, dense morphology, and excellent high-temperature stability. It offers outstanding resistance to oxidation, high purity, and strong resistance to acids, alkalis, and organic solvents, ensuring stable physical and chemical performance under harsh process conditions.
In comparison, high-purity graphite begins to oxidize at around 400 °C, leading to material loss through powdering. This not only causes contamination of surrounding equipment and vacuum chambers but also increases impurity levels in high-purity processing environments.
In contrast, SiC coatings remain chemically and physically stable up to approximately 1600 °C, significantly improving durability and process cleanliness. As a result, CVD-SiC-coated components are widely adopted in modern high-temperature industrial applications, particularly in semiconductor manufacturing.