{"id":1391,"date":"2025-09-11T05:28:46","date_gmt":"2025-09-11T05:28:46","guid":{"rendered":"https:\/\/weitai2.globaldeepsea.site\/product\/gan-epitaxy\/"},"modified":"2025-09-11T05:28:51","modified_gmt":"2025-09-11T05:28:51","slug":"gan-epitaxy","status":"publish","type":"product","link":"https:\/\/www.cn-semiconductorparts.com\/ar\/product\/gan-epitaxy\/","title":{"rendered":"\u063a\u0627\u0646 epitaxy\u00a0"},"content":{"rendered":"
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\u0634\u0628\u0647<\/em> proudly presents its cutting-edge \u063a\u0627\u0646 epitaxy\u00a0<\/strong> services, designed to meet the ever-evolving needs of the semiconductor industry. Gallium nitride (GaN) is a material known for its exceptional properties, and our epitaxial growth processes ensure that these benefits are fully realized in your devices.<\/span><\/p>\n

High-Performance GaN Layers<\/strong> \u0634\u0628\u0647<\/em> specializes in the production of high-quality \u063a\u0627\u0646 epitaxy\u00a0<\/strong> layers, offering unparalleled material purity and structural integrity. These layers are critical for a variety of applications, from power electronics to optoelectronics, where superior performance and reliability are essential. Our precision growth techniques ensure that each GaN layer meets the exacting standards required for cutting-edge devices.<\/span><\/p>\n

Optimized for Efficiency<\/strong> \u0627\u0644 \u063a\u0627\u0646 epitaxy\u00a0<\/strong> provided by Semicera is specifically engineered to enhance the efficiency of your electronic components. By delivering low-defect, high-purity GaN layers, we enable devices to operate at higher frequencies and voltages, with reduced power loss. This optimization is key for applications such as high-electron-mobility transistors (HEMTs) and light-emitting diodes (LEDs), where efficiency is paramount.<\/span><\/p>\n

Versatile Application Potential<\/strong> \u0634\u0628\u0647<\/em>\u2019s \u063a\u0627\u0646 epitaxy\u00a0<\/strong> is versatile, catering to a broad range of industries and applications. Whether you are developing power amplifiers, RF components, or laser diodes, our GaN epitaxial layers provide the foundation needed for high-performance, reliable devices. Our process can be tailored to meet specific requirements, ensuring that your products achieve optimal results.<\/span><\/p>\n

Commitment to Quality<\/strong> Quality is the cornerstone of \u0634\u0628\u0647<\/em>\u2019s approach to \u063a\u0627\u0646 epitaxy\u00a0<\/strong>. We use advanced epitaxial growth technologies and rigorous quality control measures to produce GaN layers that exhibit excellent uniformity, low defect densities, and superior material properties. This commitment to quality ensures that your devices not only meet but exceed industry standards.<\/span><\/p>\n

Innovative Growth Techniques<\/strong> \u0634\u0628\u0647<\/em> is at the forefront of innovation in the field of \u063a\u0627\u0646 epitaxy\u00a0<\/strong>. Our team continuously explores new methods and technologies to improve the growth process, delivering GaN layers with enhanced electrical and thermal characteristics. These innovations translate into better-performing devices, capable of meeting the demands of next-generation applications.<\/span><\/p>\n

Customized Solutions for Your Projects<\/strong> Recognizing that each project has unique requirements, \u0634\u0628\u0647<\/em> offers customized \u063a\u0627\u0646 epitaxy\u00a0<\/strong> solutions. Whether you need specific doping profiles, layer thicknesses, or surface finishes, we work closely with you to develop a process that meets your exact needs. Our goal is to provide you with GaN layers that are precisely engineered to support your device\u2019s performance and reliability.<\/span><\/p>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

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\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
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\u0623\u063a\u0631\u0627\u0636<\/p>\n<\/td>\n

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\u0625\u0646\u062a\u0627\u062c<\/p>\n<\/td>\n

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\u0628\u062d\u062b<\/p>\n<\/td>\n

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\u062f\u0645\u064a\u0629<\/p>\n<\/td>\n<\/tr>\n

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\u0627\u0644\u0645\u0639\u0644\u0645\u0627\u062a \u0627\u0644\u0628\u0644\u0648\u0631\u064a\u0629<\/p>\n<\/td>\n<\/tr>\n

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polytype<\/p>\n<\/td>\n

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4H<\/p>\n<\/td>\n<\/tr>\n

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\u062e\u0637\u0623 \u0641\u064a \u0627\u062a\u062c\u0627\u0647 \u0627\u0644\u0633\u0637\u062d<\/p>\n<\/td>\n

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4\u00b10.15\u00b0<\/p>\n<\/td>\n<\/tr>\n

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\u0627\u0644\u0645\u0639\u0644\u0645\u0627\u062a \u0627\u0644\u0643\u0647\u0631\u0628\u0627\u0626\u064a\u0629<\/p>\n<\/td>\n<\/tr>\n

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Dopant<\/p>\n<\/td>\n

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\u0646\u064a\u062a\u0631\u0648\u062c\u064a\u0646 \u0645\u0646 \u0627\u0644\u0646\u0648\u0639<\/p>\n<\/td>\n<\/tr>\n

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\u0627\u0644\u0645\u0642\u0627\u0648\u0645\u0629<\/p>\n<\/td>\n

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0.015-0.025OHM \u00b7 \u0633\u0645\u00a0<\/p>\n<\/td>\n<\/tr>\n

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\u0627\u0644\u0645\u0639\u0644\u0645\u0627\u062a \u0627\u0644\u0645\u064a\u0643\u0627\u0646\u064a\u0643\u064a\u0629<\/p>\n<\/td>\n<\/tr>\n

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\u0642\u0637\u0631<\/p>\n<\/td>\n

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150.0 \u00b1 0.2mm<\/p>\n<\/td>\n<\/tr>\n

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\u0633\u0645\u0627\u0643\u0629<\/p>\n<\/td>\n

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350 \u00b1 25 \u0645\u064a\u0643\u0631\u0648\u0646\u00a0<\/p>\n<\/td>\n<\/tr>\n

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\u0627\u0644\u0627\u062a\u062c\u0627\u0647 \u0627\u0644\u0645\u0633\u0637\u062d \u0627\u0644\u0623\u0648\u0644\u064a<\/p>\n<\/td>\n

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[1-100]\u00b15\u00b0<\/p>\n<\/td>\n<\/tr>\n

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\u0637\u0648\u0644 \u0645\u0633\u0637\u062d \u0623\u0633\u0627\u0633\u064a<\/p>\n<\/td>\n

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47.5 \u00b1 1.5mm<\/p>\n<\/td>\n<\/tr>\n

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\u0634\u0642\u0629 \u062b\u0627\u0646\u0648\u064a\u0629<\/p>\n<\/td>\n

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\u0644\u0627 \u0623\u062d\u062f<\/p>\n<\/td>\n<\/tr>\n

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TTV<\/p>\n<\/td>\n

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\u22645 \u0645\u064a\u0643\u0631\u0648\u0646\u00a0<\/p>\n<\/td>\n

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\u226410 \u0645\u064a\u0643\u0631\u0648\u0646\u00a0<\/p>\n<\/td>\n

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\u226415 \u0645\u064a\u0643\u0631\u0648\u0646\u00a0<\/p>\n<\/td>\n<\/tr>\n

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LTV<\/p>\n<\/td>\n

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\u22643 \u0645\u064a\u0643\u0631\u0648\u0646 (5 \u0645\u0644\u0645*5 \u0645\u0644\u0645)\u00a0\u00a0\u00a0\u00a0\u00a0<\/p>\n<\/td>\n

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\u22645 \u0645\u064a\u0643\u0631\u0648\u0646 (5 \u0645\u0644\u0645*5 \u0645\u0644\u0645)\u00a0\u00a0\u00a0\u00a0\u00a0<\/p>\n<\/td>\n

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\u226410 \u0645\u064a\u0643\u0631\u0648\u0646 (5 \u0645\u0644\u0645*5 \u0645\u0644\u0645)\u00a0\u00a0\u00a0\u00a0\u00a0<\/p>\n<\/td>\n<\/tr>\n

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\u0642\u064e\u0648\u0633<\/p>\n<\/td>\n

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-15\u03bcm ~ 15\u03bcm<\/p>\n<\/td>\n

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-35\u03bcm ~ 35\u03bcm<\/p>\n<\/td>\n

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-45\u03bcm ~ 45\u03bcm<\/p>\n<\/td>\n<\/tr>\n

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\u0627\u0644\u0627\u0639\u0648\u062c\u0627\u062c<\/p>\n<\/td>\n

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\u226435 \u0645\u064a\u0643\u0631\u0648\u0646\u00a0<\/p>\n<\/td>\n

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\u226445 \u0645\u064a\u0643\u0631\u0648\u0646\u00a0<\/p>\n<\/td>\n

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\u226455 \u0645\u064a\u0643\u0631\u0648\u0646\u00a0<\/p>\n<\/td>\n<\/tr>\n

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\u0627\u0644\u062e\u0634\u0648\u0646\u0629 \u0627\u0644\u0623\u0645\u0627\u0645\u064a\u0629 (si-face) (AFM)\u00a0<\/p>\n<\/td>\n

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Ra\u22640.2nm (5\u03bcm*5\u03bcm)<\/p>\n<\/td>\n<\/tr>\n

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\u0628\u0646\u0627\u0621<\/p>\n<\/td>\n<\/tr>\n

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\u0643\u062b\u0627\u0641\u0629 micropipe\u00a0<\/p>\n<\/td>\n

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<1 EA\/CM2<\/p>\n<\/td>\n

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<10 EA\/CM2<\/p>\n<\/td>\n

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<15 EA\/CM2<\/p>\n<\/td>\n<\/tr>\n

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\u0627\u0644\u0634\u0648\u0627\u0626\u0628 \u0627\u0644\u0645\u0639\u062f\u0646\u064a\u0629<\/p>\n<\/td>\n

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\u22645E10atoms\/cm2<\/p>\n<\/td>\n

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\u0646\u0627<\/p>\n<\/td>\n<\/tr>\n

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BPD<\/p>\n<\/td>\n

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\u22641500 EA\/CM2<\/p>\n<\/td>\n

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\u22643000 EA\/CM2<\/p>\n<\/td>\n

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\u0646\u0627<\/p>\n<\/td>\n<\/tr>\n

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TSD<\/p>\n<\/td>\n

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\u2264500 EA\/CM2<\/p>\n<\/td>\n

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\u22641000 EA\/CM2<\/p>\n<\/td>\n

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\u0646\u0627<\/p>\n<\/td>\n<\/tr>\n

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\u0627\u0644\u062c\u0648\u062f\u0629 \u0627\u0644\u0623\u0645\u0627\u0645\u064a\u0629<\/p>\n<\/td>\n<\/tr>\n

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\u0623\u0645\u0627\u0645<\/p>\n<\/td>\n

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\u0633\u064a<\/p>\n<\/td>\n<\/tr>\n

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\u0627\u0644\u0627\u0646\u062a\u0647\u0627\u0621 \u0645\u0646 \u0627\u0644\u0633\u0637\u062d<\/p>\n<\/td>\n

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Si-Face CMP<\/p>\n<\/td>\n<\/tr>\n

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\u0627\u0644\u062c\u0632\u064a\u0626\u0627\u062a<\/p>\n<\/td>\n

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\u226460A\/WEFR (SIZE 30.3\u03bcM)<\/p>\n<\/td>\n

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\u0646\u0627<\/p>\n<\/td>\n<\/tr>\n

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\u0627\u0644\u062e\u062f\u0648\u0634<\/p>\n<\/td>\n

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\u22645ea\/\u0645\u0645. \u0627\u0644\u0637\u0648\u0644 \u0627\u0644\u062a\u0631\u0627\u0643\u0645\u064a \u2264Diameter\u00a0\u00a0<\/p>\n<\/td>\n

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\u0627\u0644\u0637\u0648\u0644 \u0627\u0644\u062a\u0631\u0627\u0643\u0645\u064a \u22642*\u0627\u0644\u0642\u0637\u0631\u00a0\u00a0<\/p>\n<\/td>\n

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\u0646\u0627<\/p>\n<\/td>\n<\/tr>\n

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\u0642\u0634\u0631 \u0627\u0644\u0628\u0631\u062a\u0642\u0627\u0644\/\u0627\u0644\u062d\u0641\u0631\/\u0627\u0644\u0628\u0642\u0639\/\u0627\u0644\u062f\u0645\u0627\u063a\/\u0627\u0644\u0634\u0642\u0648\u0642\/\u0627\u0644\u062a\u0644\u0648\u062b<\/p>\n<\/td>\n

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\u0644\u0627 \u0623\u062d\u062f<\/p>\n<\/td>\n

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\u0646\u0627<\/p>\n<\/td>\n<\/tr>\n

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\u0631\u0642\u0627\u0626\u0642 \u0627\u0644\u062d\u0627\u0641\u0629\/\u0627\u0644\u0645\u0633\u0627\u0641\u0627\u062a \u0627\u0644\u0628\u0627\u062f\u0626\u0629\/\u0627\u0644\u0643\u0633\u0631\/\u0627\u0644\u0623\u0644\u0648\u0627\u062d \u0627\u0644\u0633\u062f\u0627\u0633\u064a\u0629<\/p>\n<\/td>\n

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\u0644\u0627 \u0623\u062d\u062f<\/p>\n<\/td>\n<\/tr>\n

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\u0627\u0644\u0645\u0646\u0627\u0637\u0642 polytype\u00a0<\/p>\n<\/td>\n

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\u0644\u0627 \u0623\u062d\u062f<\/p>\n<\/td>\n

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\u0645\u0646\u0637\u0642\u0629 \u062a\u0631\u0627\u0643\u0645\u064a\u0629 20%\u00a0\u00a0<\/p>\n<\/td>\n

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\u0627\u0644\u062a\u0631\u0627\u0643\u0645\u064a\u0629 \u0645\u0646\u0637\u0642\u0629 \u226430%\u00a0\u00a0<\/p>\n<\/td>\n<\/tr>\n

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\u0648\u0636\u0639 \u0639\u0644\u0627\u0645\u0629 \u0644\u064a\u0632\u0631 \u0627\u0644\u0623\u0645\u0627\u0645\u064a\u0629<\/p>\n<\/td>\n

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\u0644\u0627 \u0623\u062d\u062f<\/p>\n<\/td>\n<\/tr>\n

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\u062c\u0648\u062f\u0629 \u0627\u0644\u0638\u0647\u0631<\/p>\n<\/td>\n<\/tr>\n

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\u0627\u0644\u0627\u0646\u062a\u0647\u0627\u0621 \u0645\u0646 \u0627\u0644\u0638\u0647\u0631<\/p>\n<\/td>\n

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C-Face CMP<\/p>\n<\/td>\n<\/tr>\n

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\u0627\u0644\u062e\u062f\u0648\u0634<\/p>\n<\/td>\n

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\u22645EA\/MM \u060c \u0627\u0644\u0637\u0648\u0644 \u0627\u0644\u062a\u0631\u0627\u0643\u0645\u064a \u22642*\u0627\u0644\u0642\u0637\u0631\u00a0\u00a0\u00a0<\/p>\n<\/td>\n

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\u0646\u0627<\/p>\n<\/td>\n<\/tr>\n

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\u0639\u064a\u0648\u0628 \u0627\u0644\u0638\u0647\u0631 (\u0631\u0642\u0627\u0626\u0642 \u0627\u0644\u062d\u0627\u0641\u0629\/\u0627\u0644\u0645\u0633\u0627\u0641\u0627\u062a \u0627\u0644\u0628\u0627\u062f\u0626\u0629)<\/p>\n<\/td>\n

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\u0644\u0627 \u0623\u062d\u062f<\/p>\n<\/td>\n<\/tr>\n

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\u062e\u0634\u0648\u0646\u0629 \u0627\u0644\u0638\u0647\u0631<\/p>\n<\/td>\n

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Ra\u22640.2nm (5\u03bcm*5\u03bcm)<\/p>\n<\/td>\n<\/tr>\n

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\u0639\u0648\u062f\u0629 \u0644\u064a\u0632\u0631 \u0627\u0644\u0639\u0644\u0627\u0645\u0627\u062a<\/p>\n<\/td>\n

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1 \u0645\u0645 (\u0645\u0646 \u0627\u0644\u062d\u0627\u0641\u0629 \u0627\u0644\u0639\u0644\u064a\u0627)\u00a0<\/p>\n<\/td>\n<\/tr>\n

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\u062d\u0627\u0641\u0629<\/p>\n<\/td>\n<\/tr>\n

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\u062d\u0627\u0641\u0629<\/p>\n<\/td>\n

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\u0634\u0627\u0645\u0641\u0631<\/p>\n<\/td>\n<\/tr>\n

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\u0627\u0644\u062a\u063a\u0644\u064a\u0641<\/p>\n<\/td>\n<\/tr>\n

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\u0627\u0644\u062a\u063a\u0644\u064a\u0641<\/p>\n<\/td>\n

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\u062c\u0627\u0647\u0632 \u0644\u0640 EPI \u0645\u0639 \u062a\u063a\u0644\u064a\u0641 \u0641\u0631\u0627\u063a\u00a0\u00a0<\/p>\n

\u0639\u0628\u0648\u0627\u062a \u0627\u0644\u0643\u0627\u0633\u064a\u062a \u0645\u062a\u0639\u062f\u062f\u0629 \u0627\u0644\u0641\u0631\u0633<\/p>\n<\/td>\n<\/tr>\n

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*\u0627\u0644\u0645\u0644\u0627\u062d\u0638\u0627\u062a \uff1a \"NA\" \u062a\u0639\u0646\u064a \u0639\u062f\u0645 \u0648\u062c\u0648\u062f \u0639\u0646\u0627\u0635\u0631 \u0637\u0644\u0628 \u0644\u0645 \u064a\u062a\u0645 \u0630\u0643\u0631\u0647\u0627 \u0642\u062f \u062a\u0634\u064a\u0631 \u0625\u0644\u0649 Semi.\u00a0\u00a0\u00a0\u00a0<\/p>\n<\/td>\n<\/tr>\n<\/tbody>\n<\/table><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

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\"tech_1_2_size\" <\/img><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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\"\u0631\u0642\u0627\u0626\u0642 <\/img><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/div>","protected":false},"excerpt":{"rendered":"

GaN Epitaxy is a cornerstone in the production of high-performance semiconductor devices, offering exceptional efficiency, thermal stability, and reliability. Semicera\u2019s GaN Epitaxy solutions are tailored to meet the demands of cutting-edge applications, ensuring superior quality and consistency in every layer.<\/p>","protected":false},"featured_media":1056,"comment_status":"closed","ping_status":"open","template":"","meta":[],"product_brand":[],"product_cat":[51,24],"product_tag":[],"class_list":{"0":"post-1391","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-sic-cantilever-paddle","7":"product_cat-silicon-carbide-ceramic","9":"first","10":"instock","11":"product-type-simple"},"_links":{"self":[{"href":"https:\/\/www.cn-semiconductorparts.com\/ar\/wp-json\/wp\/v2\/product\/1391","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.cn-semiconductorparts.com\/ar\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.cn-semiconductorparts.com\/ar\/wp-json\/wp\/v2\/types\/product"}],"replies":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/ar\/wp-json\/wp\/v2\/comments?post=1391"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/ar\/wp-json\/wp\/v2\/media\/1056"}],"wp:attachment":[{"href":"https:\/\/www.cn-semiconductorparts.com\/ar\/wp-json\/wp\/v2\/media?parent=1391"}],"wp:term":[{"taxonomy":"product_brand","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/ar\/wp-json\/wp\/v2\/product_brand?post=1391"},{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/ar\/wp-json\/wp\/v2\/product_cat?post=1391"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/ar\/wp-json\/wp\/v2\/product_tag?post=1391"}],"curies":[{"name":"WP","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}