In advanced epitaxial devices such as ASM, 12-inch silicon carbide (SiC) coated bases (susceptor) are becoming key consumables in the manufacturing of third-generation semiconductors. <\/span><\/p>\n The traditional graphite base faces two major challenges in the high-temperature MOCVD process: one is the contamination caused by the reverse diffusion of silicon vapor, and the other is the cracking caused by the difference in thermal expansion coefficients. The β-SiC coating fabricated by chemical vapor deposition (CVD) process, with its dense structure of 4.3g\/cm³ and thermal conductivity of 3.2W\/m·K, can still maintain a flatness of ±0.2mm at 1600 ° C. Test data from ASML of the Netherlands shows that the base coated with high-quality SiC can reduce the wafer bow from 120μm to below 35μm.<\/span><\/p>\n To meet the epitaxial requirements of 12-inch wafers, modern bases adopt gradient coating technology: the bottom layer is a 50μm buffer layer (SiC+10%TiC), the middle layer is 120μm high-purity SiC, and the surface is polished by plasma to achieve a mirror-like effect with Ra<0.05μm. This structure keeps the temperature uniformity within ±1.5 ° C (measured data from the EPI Centura platform of Applied Materials). It is worth noting that the multi-pore channel design on the back of the base achieves uniform distribution of hydrogen carrier gas, reducing the fluctuation of epitaxial growth rate to ±1.2%.<\/span><\/p>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n <\/p>\n 12-inch silicon carbion-coated base, specially designed for ASM equipment, features high-purity SiC that is resistant to high temperatures and corrosion, ensuring the stability of wafer processes. It is compatible with EPI\/CVD and other manufacturing processes, offering a long service life and excellent thermal uniformity.<\/p>","protected":false},"featured_media":671,"comment_status":"closed","ping_status":"open","template":"","meta":[],"product_brand":[],"product_cat":[16,18],"product_tag":[],"class_list":{"0":"post-1297","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-cvd-sic","7":"product_cat-sic-epitaxial-parts","9":"first","10":"instock","11":"product-type-simple"},"_links":{"self":[{"href":"https:\/\/www.cn-semiconductorparts.com\/de\/wp-json\/wp\/v2\/product\/1297","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.cn-semiconductorparts.com\/de\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.cn-semiconductorparts.com\/de\/wp-json\/wp\/v2\/types\/product"}],"replies":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/de\/wp-json\/wp\/v2\/comments?post=1297"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/de\/wp-json\/wp\/v2\/media\/671"}],"wp:attachment":[{"href":"https:\/\/www.cn-semiconductorparts.com\/de\/wp-json\/wp\/v2\/media?parent=1297"}],"wp:term":[{"taxonomy":"product_brand","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/de\/wp-json\/wp\/v2\/product_brand?post=1297"},{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/de\/wp-json\/wp\/v2\/product_cat?post=1297"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/de\/wp-json\/wp\/v2\/product_tag?post=1297"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}![\"Single](\"\/wp-content\/uploads\/2025\/09\/3438b44d74867c04.webp\")
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