{"id":1404,"date":"2025-09-11T05:28:53","date_gmt":"2025-09-11T05:28:53","guid":{"rendered":"https:\/\/weitai2.globaldeepsea.site\/product\/10x10mm-nonpolar-m-plane-aluminum-substrate\/"},"modified":"2026-04-29T15:33:48","modified_gmt":"2026-04-29T07:33:48","slug":"10x10mm-nonpolar-m-plane-aluminum-substrate","status":"publish","type":"product","link":"https:\/\/www.cn-semiconductorparts.com\/de\/product\/10x10mm-nonpolar-m-plane-aluminum-substrate\/","title":{"rendered":"10 x 10 mm unpolarer M-Ebenen-Aluminiumsubstrat"},"content":{"rendered":"
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Semicera\u2019s 10 x 10 mm unpolarer M-Ebenen-Aluminiumsubstrat<\/strong> is meticulously designed to meet the exacting requirements of advanced optoelectronic applications. This substrate features a nonpolar M-plane orientation, which is critical for reducing polarization effects in devices such as LEDs and laser diodes, leading to enhanced performance and efficiency.<\/span><\/p>\n

Der 10 x 10 mm unpolarer M-Ebenen-Aluminiumsubstrat<\/strong> is crafted with exceptional crystalline quality, ensuring minimal defect densities and superior structural integrity. This makes it an ideal choice for the epitaxial growth of high-quality III-nitride films, which are essential for the development of next-generation optoelectronic devices.<\/span><\/p>\n

Semicera\u2019s precision engineering ensures that each 10 x 10 mm unpolarer M-Ebenen-Aluminiumsubstrat<\/strong> offers consistent thickness and surface flatness, which are crucial for uniform film deposition and device fabrication. Additionally, the substrate\u2019s compact size makes it suitable for both research and production environments, allowing for flexible use in a variety of applications. With its excellent thermal and chemical stability, this substrate provides a reliable foundation for the development of cutting-edge optoelectronic technologies.<\/span><\/p>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

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Artikel<\/p>\n<\/td>\n

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Produktion<\/p>\n<\/td>\n

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Forschung<\/p>\n<\/td>\n

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Dummy<\/p>\n<\/td>\n<\/tr>\n

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Kristallparameter<\/p>\n<\/td>\n<\/tr>\n

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Polytype<\/p>\n<\/td>\n

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4H<\/p>\n<\/td>\n<\/tr>\n

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Oberfl\u00e4chenorientierungsfehler<\/p>\n<\/td>\n

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4\u00b10.15\u00b0<\/p>\n<\/td>\n<\/tr>\n

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Elektrische Parameter<\/p>\n<\/td>\n<\/tr>\n

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Dopant<\/p>\n<\/td>\n

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Stickstoff vom Typ N<\/p>\n<\/td>\n<\/tr>\n

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Widerstand<\/p>\n<\/td>\n

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0,015-0.025OHM \u00b7 cm<\/p>\n<\/td>\n<\/tr>\n

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Mechanische Parameter<\/p>\n<\/td>\n<\/tr>\n

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Durchmesser<\/p>\n<\/td>\n

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150,0 \u00b1 0,2 mm<\/p>\n<\/td>\n<\/tr>\n

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Dicke<\/p>\n<\/td>\n

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350 \u00b1 25 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

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Prim\u00e4re flache Orientierung<\/p>\n<\/td>\n

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[1-100]\u00b15\u00b0<\/p>\n<\/td>\n<\/tr>\n

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Prim\u00e4re flache L\u00e4nge<\/p>\n<\/td>\n

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47,5 \u00b1 1,5 mm<\/p>\n<\/td>\n<\/tr>\n

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Sekund\u00e4re flache<\/p>\n<\/td>\n

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Keiner<\/p>\n<\/td>\n<\/tr>\n

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Ttv<\/p>\n<\/td>\n

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\u22645 \u00b5m<\/p>\n<\/td>\n

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\u226410 \u00b5m<\/p>\n<\/td>\n

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\u226415 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

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LTV<\/p>\n<\/td>\n

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\u22643 \u03bcm (5 mm*5 mm)<\/p>\n<\/td>\n

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\u22645 \u03bcm (5 mm*5 mm)<\/p>\n<\/td>\n

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\u226410 \u03bcm (5 mm*5 mm)<\/p>\n<\/td>\n<\/tr>\n

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Bogen<\/p>\n<\/td>\n

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-15 \u03bcm ~ 15 \u03bcm<\/p>\n<\/td>\n

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-35 \u03bcm ~ 35 \u03bcm<\/p>\n<\/td>\n

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-45 \u03bcm ~ 45 \u03bcm<\/p>\n<\/td>\n<\/tr>\n

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Kette<\/p>\n<\/td>\n

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\u226435 \u00b5m<\/p>\n<\/td>\n

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\u226445 \u00b5m<\/p>\n<\/td>\n

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\u226455 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

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Front (Si-Face) Rauheit (AFM)<\/p>\n<\/td>\n

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Ra \u2264 0,2 nm (5 & mgr; m*5 \u03bcm)<\/p>\n<\/td>\n<\/tr>\n

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Struktur<\/p>\n<\/td>\n<\/tr>\n

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Mikropipe -Dichte<\/p>\n<\/td>\n

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<1 EA\/CM2<\/p>\n<\/td>\n

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<10 EA\/CM2<\/p>\n<\/td>\n

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<15 EA\/CM2<\/p>\n<\/td>\n<\/tr>\n

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Metallverunreinigungen<\/p>\n<\/td>\n

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\u22645E10atoms\/cm2<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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BPD<\/p>\n<\/td>\n

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\u22641500 EA\/CM2<\/p>\n<\/td>\n

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\u22643000 EA\/CM2<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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TSD<\/p>\n<\/td>\n

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\u2264500 EA\/CM2<\/p>\n<\/td>\n

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\u22641000 EA\/CM2<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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Frontqualit\u00e4t<\/p>\n<\/td>\n<\/tr>\n

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Front<\/p>\n<\/td>\n

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Si<\/p>\n<\/td>\n<\/tr>\n

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Oberfl\u00e4chenbeschaffung<\/p>\n<\/td>\n

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Si-Face CMP<\/p>\n<\/td>\n<\/tr>\n

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Partikel<\/p>\n<\/td>\n

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\u226460ea\/Wafer (Gr\u00f6\u00dfe \u2265 0,3 \u03bcm)<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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Kratzer<\/p>\n<\/td>\n

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\u22645ea\/mm. Kumulative L\u00e4nge \u2264 Diameter<\/p>\n<\/td>\n

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Kumulative L\u00e4nge \u2264 2*Durchmesser<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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Orangenschale\/Pits\/Flecken\/Streifen\/Risse\/Kontamination<\/p>\n<\/td>\n

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Keiner<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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Kantenchips\/Eingeweide\/Fraktur-\/Sechskantplatten<\/p>\n<\/td>\n

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Keiner<\/p>\n<\/td>\n<\/tr>\n

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Polytyperbereiche<\/p>\n<\/td>\n

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Keiner<\/p>\n<\/td>\n

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Kumulative Fl\u00e4che \u2264 2010TP3T<\/p>\n<\/td>\n

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Kumulative Fl\u00e4che \u2264 30%<\/p>\n<\/td>\n<\/tr>\n

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Frontlasermarkierung<\/p>\n<\/td>\n

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Keiner<\/p>\n<\/td>\n<\/tr>\n

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R\u00fcckenqualit\u00e4t<\/p>\n<\/td>\n<\/tr>\n

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R\u00fcckbeschluss<\/p>\n<\/td>\n

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C-Face CMP<\/p>\n<\/td>\n<\/tr>\n

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Kratzer<\/p>\n<\/td>\n

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\u22645ea\/mm, kumulative L\u00e4nge \u2264 2*Durchmesser<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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R\u00fcckenfehler (Kantenchips\/Eingebiete)<\/p>\n<\/td>\n

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Keiner<\/p>\n<\/td>\n<\/tr>\n

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R\u00fcckenrauheit<\/p>\n<\/td>\n

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Ra \u2264 0,2 nm (5 & mgr; m*5 \u03bcm)<\/p>\n<\/td>\n<\/tr>\n

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R\u00fcckmarkierung von Laser<\/p>\n<\/td>\n

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1 mm (von der Oberkante)<\/p>\n<\/td>\n<\/tr>\n

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Rand<\/p>\n<\/td>\n<\/tr>\n

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Rand<\/p>\n<\/td>\n

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Chamfer<\/p>\n<\/td>\n<\/tr>\n

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Packaging<\/p>\n<\/td>\n<\/tr>\n

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Packaging<\/p>\n<\/td>\n

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Epi-ready with vacuum packaging<\/p>\n

Multi-wafer cassette packaging<\/p>\n<\/td>\n<\/tr>\n

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*Notes\uff1a \u201cNA\u201d means no request Items not mentioned may refer to SEMI-STD.<\/p>\n<\/td>\n<\/tr>\n<\/tbody>\n<\/table><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

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\"tech_1_2_size\" <\/img><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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\"SiC <\/img><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/div>","protected":false},"excerpt":{"rendered":"

10x10mm Nonpolar M-plane Aluminum Substrate\u2013 Ideal for advanced optoelectronic applications, offering superior crystalline quality and stability in a compact, high-precision format.<\/p>","protected":false},"featured_media":795,"comment_status":"closed","ping_status":"open","template":"","meta":[],"product_brand":[],"product_cat":[55,26],"product_tag":[],"class_list":{"0":"post-1404","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-ain-wafer","7":"product_cat-wafer","9":"first","10":"instock","11":"product-type-simple"},"_links":{"self":[{"href":"https:\/\/www.cn-semiconductorparts.com\/de\/wp-json\/wp\/v2\/product\/1404","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.cn-semiconductorparts.com\/de\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.cn-semiconductorparts.com\/de\/wp-json\/wp\/v2\/types\/product"}],"replies":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/de\/wp-json\/wp\/v2\/comments?post=1404"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/de\/wp-json\/wp\/v2\/media\/795"}],"wp:attachment":[{"href":"https:\/\/www.cn-semiconductorparts.com\/de\/wp-json\/wp\/v2\/media?parent=1404"}],"wp:term":[{"taxonomy":"product_brand","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/de\/wp-json\/wp\/v2\/product_brand?post=1404"},{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/de\/wp-json\/wp\/v2\/product_cat?post=1404"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/de\/wp-json\/wp\/v2\/product_tag?post=1404"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}