{"id":2322,"date":"2025-09-11T13:34:00","date_gmt":"2025-09-11T05:34:00","guid":{"rendered":"https:\/\/weitai2.globaldeepsea.site\/product\/anti-oxidation-high-purity-sic-coated-mocvd-tray\/"},"modified":"2026-04-29T15:27:29","modified_gmt":"2026-04-29T07:27:29","slug":"anti-oxidation-high-purity-sic-coated-mocvd-tray","status":"publish","type":"product","link":"https:\/\/www.cn-semiconductorparts.com\/de\/product\/anti-oxidation-high-purity-sic-coated-mocvd-tray\/","title":{"rendered":"Antioxidation mit hoher Reinheit mit sic beschichteten MOCVD-Tablett"},"content":{"rendered":"

<\/p>\n

\n
\n
\n
\n
\n
\n
\n
\n
\n

Beschreibung<\/span><\/h3>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

\n
\n
\n
\n
\n
\n

Our company provides SiC coating process services by CVD method on the surface of graphite, ceramics and other materials, so that special gases containing carbon and silicon react at high temperature to obtain high purity SiC molecules, molecules deposited on the surface of the coated materials, forming a SiC protective layer.<\/p>\n

<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

\n
\n
\n
\n
\n
\n
\n
\n

Hauptmerkmale<\/span><\/h3>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

\n
\n
\n
\n
\n
\n

1. High temperature oxidation resistance:
the oxidation resistance is still very good when the temperature is as high as 1600 C.
2. High purity: made by chemical vapor deposition under high temperature chlorination condition.
3. Erosion resistance: high hardness, compact surface, fine particles.
4. Corrosion resistance: acid, alkali, salt and organic reagents.<\/p>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

\n
\n
\n
\n
\n
\n
\n
\n

Main Specifications of CVD-SIC Coating<\/span><\/h3>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

\n
\n
\n
\n
\n
\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
SIC-CVD-Eigenschaften<\/td>\n<\/tr>\n
Kristallstruktur<\/td>\nFCC β phase<\/td>\n<\/tr>\n
Dichte<\/td>\ng\/cm ³<\/td>\n3.21<\/td>\n<\/tr>\n
H\u00e4rte<\/td>\nVickers H\u00e4rte<\/td>\n2500<\/td>\n<\/tr>\n
K\u00f6rnung<\/td>\nμm<\/td>\n2~10<\/td>\n<\/tr>\n
Chemische Reinheit<\/td>\n%<\/td>\n99.99995<\/td>\n<\/tr>\n
W\u00e4rmekapazit\u00e4t<\/td>\nJ·kg-1 ·K-1<\/td>\n640<\/td>\n<\/tr>\n
Sublimationstemperatur<\/td>\n\u2103<\/td>\n2700<\/td>\n<\/tr>\n
Felexurale St\u00e4rke<\/td>\nMPa  (RT 4-point)<\/td>\n415<\/td>\n<\/tr>\n
Young’ s Modulus<\/td>\nGPA (4PT Bend, 1300 \u2103)<\/td>\n430<\/td>\n<\/tr>\n
W\u00e4rmeausdehnung (CTE)<\/td>\n10-6K-1<\/td>\n4.5<\/td>\n<\/tr>\n
W\u00e4rmeleitf\u00e4higkeit<\/td>\n(W\/mk)<\/td>\n300<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

\n
\n
\n
\n
\n
\n
\n
\n
\n
\"MOCVD<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

\n
\n
\n
\n
\n
\"MOCVD<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

\n
\n
\n
\n
\n
\n
\n
\n

 Equipment<\/span><\/h3>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

\n
\n
\n
\n
\n
\n

\"about\"<\/p>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

\n
\n
\n
\n
\n
\n
\n
\n
\n
\"SEMICERA<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

\n
\n
\n
\"Semizelle<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

\n
\n
\n
\"Ausr\u00fcstungsmaschine\"<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

\n
\n
\n
\"CNN<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

\n
\n
\n
\"Semizera<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

\n
\n
\n
\"Unser<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n<\/div>","protected":false},"excerpt":{"rendered":"

<\/p>\n

Semicera Energy Technology Co., Ltd. ist ein f\u00fchrender Lieferant, der sich auf Wafer- und fortschrittliche Halbleiterverbrauchsg\u00fcter spezialisiert hat. Wir sind bestrebt, hochwertigen, zuverl\u00e4ssigen und innovativen Produkten f\u00fcr die Herstellung von Halbleiter und die Photovoltaik-Industrie und andere verwandte Felder bereitzustellen.<\/p>\n

Our product line includes SiC\/TaC coated graphite products and ceramic products, encompassing various materials such as silicon carbide, silicon nitride, and aluminum oxide and etc.<\/p>\n

As a trusted supplier, we understand the importance of consumables in the manufacturing process, and we are committed to delivering products that meet the highest quality standards to fulfill our customers’ needs.<\/p>","protected":false},"featured_media":4559,"comment_status":"closed","ping_status":"open","template":"","meta":[],"product_brand":[],"product_cat":[16,49],"product_tag":[],"class_list":{"0":"post-2322","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-cvd-sic","7":"product_cat-mocvd-epitaxial-parts","9":"first","10":"instock","11":"product-type-simple"},"_links":{"self":[{"href":"https:\/\/www.cn-semiconductorparts.com\/de\/wp-json\/wp\/v2\/product\/2322","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.cn-semiconductorparts.com\/de\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.cn-semiconductorparts.com\/de\/wp-json\/wp\/v2\/types\/product"}],"replies":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/de\/wp-json\/wp\/v2\/comments?post=2322"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/de\/wp-json\/wp\/v2\/media\/4559"}],"wp:attachment":[{"href":"https:\/\/www.cn-semiconductorparts.com\/de\/wp-json\/wp\/v2\/media?parent=2322"}],"wp:term":[{"taxonomy":"product_brand","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/de\/wp-json\/wp\/v2\/product_brand?post=2322"},{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/de\/wp-json\/wp\/v2\/product_cat?post=2322"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/de\/wp-json\/wp\/v2\/product_tag?post=2322"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}