Si Substrate

With its superior precision and high purity, Semicera’s Si Substrate ensures reliable and consistent performance in critical applications, including Epi-Wafer and Gallium Oxide (Ga2O3) manufacturing. Designed to support the production of advanced microelectronics, this substrate offers exceptional compatibility and stability, making it an essential material for cutting-edge technologies in telecommunications, automotive, and industrial sectors.

The Si Substrate by Semicera is an essential component in the production of high-performance semiconductor devices. Engineered from high-purity Silicon (Si), this substrate offers exceptional uniformity, stability, and excellent conductivity, making it ideal for a wide range of advanced applications in the semiconductor industry. Whether used in Si Wafer, SiC Substrate, SOI Wafer, or SiN Substrate production, the Semicera Si Substrate delivers consistent quality and superior performance to meet the growing demands of modern electronics and materials science.

Unmatched Performance with High Purity and Precision

Semicera’s Si Substrate is manufactured using advanced processes that ensure high purity and tight dimensional control. The substrate serves as the foundation for the production of a variety of high-performance materials, including Epi-Wafers and AlN Wafers. The precision and uniformity of the Si Substrate make it an excellent choice for creating thin-film epitaxial layers and other critical components used in the production of next-generation semiconductors. Whether you’re working with Gallium Oxide (Ga2O3) or other advanced materials, Semicera’s Si Substrate ensures the highest levels of reliability and performance.

Applications in Semiconductor Manufacturing

In the semiconductor industry, the Si Substrate from Semicera is utilized in a broad array of applications, including Si Wafer and SiC Substrate production, where it provides a stable, reliable base for the deposition of active layers. The substrate plays a critical role in fabricating SOI Wafers (Silicon On Insulator), which are essential for advanced microelectronics and integrated circuits. Furthermore, Epi-Wafers (epitaxial wafers) built on Si Substrates are integral in producing high-performance semiconductor devices such as power transistors, diodes, and integrated circuits.

The Si Substrate also supports the manufacturing of devices using Gallium Oxide (Ga2O3), a promising wide-bandgap material used for high-power applications in power electronics. Additionally, the compatibility of Semicera’s Si Substrate with AlN Wafers and other advanced substrates ensures that it can meet the diverse requirements of high-tech industries, making it an ideal solution for the production of cutting-edge devices in telecommunications, automotive, and industrial sectors.

Reliable and Consistent Quality for High-Tech Applications

The Si Substrate by Semicera is carefully engineered to meet the rigorous demands of semiconductor fabrication. Its exceptional structural integrity and high-quality surface properties make it the ideal material for use in cassette systems for wafer transport, as well as for creating high-precision layers in semiconductor devices. The substrate’s ability to maintain consistent quality under varying process conditions ensures minimal defects, enhancing the yield and performance of the final product.

With its superior thermal conductivity, mechanical strength, and high purity, Semicera’s Si Substrate is the material of choice for manufacturers looking to achieve the highest standards of precision, reliability, and performance in semiconductor production.

Choose Semicera’s Si Substrate for High-Purity, High-Performance Solutions

For manufacturers in the semiconductor industry, the Si Substrate from Semicera offers a robust, high-quality solution for a wide range of applications, from Si Wafer production to the creation of Epi-Wafers and SOI Wafers. With unmatched purity, precision, and reliability, this substrate enables the production of cutting-edge semiconductor devices, ensuring long-term performance and optimal efficiency. Choose Semicera for your Si substrate needs, and trust in a product designed to meet the demands of tomorrow’s technologies.

Elementos

Producción

Investigación

Ficticio

Parámetros de cristal

Politito

4H

Error de orientación de la superficie

4±0.15°

Parámetros eléctricos

Dopante

nitrógeno de tipo N

Resistividad

0.015-0.025ohm · cm

Parámetros mecánicos

Diámetro

150.0 ± 0.2 mm

Espesor

350 ± 25 µm

Orientación plana primaria

[1-100]±5°

Longitud plana primaria

47.5 ± 1.5 mm

Plano secundario

Ninguno

TTV

≤5 µm

≤10 µm

≤15 µm

LTV

≤3 μm (5 mm*5 mm)

≤5 μm (5 mm*5 mm)

≤10 μm (5 mm*5 mm)

Arco

-15 μm ~ 15 μm

-35 μm ~ 35 μm

-45 μm ~ 45 μm

Urdimbre

≤35 µm

≤45 µm

≤55 µm

Rugosidad delantera (SI-FACE) (AFM)

RA≤0.2Nm (5 μm*5 μm)

Estructura

Densidad de micropipe

<1 ea/cm2

<10 ea/cm2

<15 ea/cm2

Impurezas de metal

≤5E10atoms/cm2

N / A

BPD

≤1500 ea/cm2

≤3000 ea/cm2

N / A

TSD

≤500 ea/cm2

≤1000 ea/cm2

N / A

Calidad frontal

Frente

Si

Acabado superficial

SI-FACE CMP

Partículas

≤60ea/oblea (tamaño ≥0.3 μm)

N / A

Arañazos

≤5ea/mm. Longitud acumulativa ≤diameter

Longitud acumulativa ≤2*diámetro

N / A

Peel de naranja/pits/manchas/estrías/grietas/contaminación

Ninguno

N / A

Chips de borde/sangría/placas hexagonales

Ninguno

Áreas de politype

Ninguno

Área acumulada ≤20%

Área acumulada ≤30%

Marcado láser delantero

Ninguno

Calidad espalda

Final

CMP C-FACE

Arañazos

≤5EA/mm, longitud acumulativa ≤2*diámetro

N / A

Defectos posteriores (chips/muescas de borde)

Ninguno

Rugosidad

RA≤0.2Nm (5 μm*5 μm)

Marcado láser de espalda

1 mm (desde el borde superior)

Borde

Borde

Chaflán

Embalaje

Embalaje

Lista de EPI con embalaje de vacío

Embalaje de cassette de múltiples obras

*Notas: "NA" significa que ningún elemento de solicitud no mencionado puede referirse a SEMI-STD.

tech_1_2_size

Obleas de sic

Nuevo

Esperamos su contacto con nosotros