Silicon en obleas aislantes

Semicera’s Silicon-on-Insulator wafers provide high-performance solutions for advanced semiconductor applications. Ideally suited for MEMS, sensors, and microelectronics, these wafers provide excellent electrical isolation and low parasitic capacitance. Semicera ensures precision manufacturing, delivering consistent quality for a range of innovative technologies. We look forward to being your long-term partner in China.

Silicon on Insulator Wafers from Semicera are designed to meet the growing demand for high-performance semiconductor solutions. Our SOI wafers offer superior electrical performance and reduced parasitic device capacitance, making them ideal for advanced applications such as MEMS devices, sensors, and integrated circuits. Semicera’s expertise in wafer production ensures that each SOI wafer provides reliable, high-quality results for your next-generation technology needs.

Our Silicon on Insulator Wafers offer an optimal balance between cost-effectiveness and performance. With soi wafer cost becoming increasingly competitive, these wafers are widely used in a range of industries, including microelectronics and optoelectronics. Semicera’s high-precision production process guarantees superior wafer bonding and uniformity, making them suitable for a variety of applications, from cavity SOI wafers to standard silicon wafers.

Características clave:

       •  High-quality SOI wafers optimized for performance in MEMS and other applications.

       •  Competitive soi wafer cost for businesses seeking advanced solutions without compromising quality.

       •  Ideal for cutting-edge technologies, offering enhanced electrical isolation and efficiency in silicon on insulator systems.

Our Silicon on Insulator Wafers are engineered to provide high-performance solutions, supporting the next wave of innovation in semiconductor technology. Whether you’re working on cavity SOI wafers, MEMS devices, or silicon on insulator components, Semicera delivers wafers that meet the highest standards in the industry.

Elementos

Producción

Investigación

Ficticio

Parámetros de cristal

Politito

4H

Error de orientación de la superficie

<11-20 >4±0.15°

Parámetros eléctricos

Dopante

nitrógeno de tipo N

Resistividad

0.015-0.025ohm·cm

Parámetros mecánicos

Diámetro

150.0±0.2mm

Espesor

350±25 μm

Orientación plana primaria

[1-100]±5°

Longitud plana primaria

47.5±1.5mm

Plano secundario

Ninguno

TTV

≤5 μm

≤10 μm

≤15 μm

LTV

≤3 μm(5mm*5mm)

≤5 μm(5mm*5mm)

≤10 μm(5mm*5mm)

Arco

-15μm ~ 15μm

-35μm ~ 35μm

-45μm ~ 45μm

Urdimbre

≤35 μm

≤45 μm

≤55 μm

Rugosidad delantera (SI-FACE) (AFM)

Ra≤0.2nm (5μm*5μm)

Estructura

Densidad de micropipe

<1 ea/cm2

<10 ea/cm2

<15 ea/cm2

Impurezas de metal

≤5E10atoms/cm2

N / A

BPD

≤1500 ea/cm2

≤3000 ea/cm2

N / A

TSD

≤500 ea/cm2

≤1000 ea/cm2

N / A

Calidad frontal

Frente

Si

Acabado superficial

SI-FACE CMP

Partículas

≤60ea/wafer (size≥0.3μm)

N / A

Arañazos

≤5ea/mm. Cumulative length ≤Diameter

Cumulative length≤2*Diameter

N / A

Peel de naranja/pits/manchas/estrías/grietas/contaminación

Ninguno

N / A

Chips de borde/sangría/placas hexagonales

Ninguno

Áreas de politype

Ninguno

Cumulative area≤20%

Cumulative area≤30%

Marcado láser delantero

Ninguno

Calidad espalda

Final

CMP C-FACE

Arañazos

≤5ea/mm,Cumulative length≤2*Diameter

N / A

Defectos posteriores (chips/muescas de borde)

Ninguno

Rugosidad

Ra≤0.2nm (5μm*5μm)

Marcado láser de espalda

1 mm (desde el borde superior)

Borde

Borde

Chaflán

Embalaje

Embalaje

Lista de EPI con embalaje de vacío

Embalaje de cassette de múltiples obras

*Notes: “NA” means no request Items not mentioned may refer to SEMI-STD.

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Obleas de sic

Nuevo

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