10x10mm Nonpolar M-plane Aluminum Substrate– Ideal for advanced optoelectronic applications, offering superior crystalline quality and stability in a compact, high-precision format.
Semicera’s 10x10mm Nonpolar M-plane Aluminum Substrate is meticulously designed to meet the exacting requirements of advanced optoelectronic applications. This substrate features a nonpolar M-plane orientation, which is critical for reducing polarization effects in devices such as LEDs and laser diodes, leading to enhanced performance and efficiency.
The 10x10mm Nonpolar M-plane Aluminum Substrate is crafted with exceptional crystalline quality, ensuring minimal defect densities and superior structural integrity. This makes it an ideal choice for the epitaxial growth of high-quality III-nitride films, which are essential for the development of next-generation optoelectronic devices.
Semicera’s precision engineering ensures that each 10x10mm Nonpolar M-plane Aluminum Substrate offers consistent thickness and surface flatness, which are crucial for uniform film deposition and device fabrication. Additionally, the substrate’s compact size makes it suitable for both research and production environments, allowing for flexible use in a variety of applications. With its excellent thermal and chemical stability, this substrate provides a reliable foundation for the development of cutting-edge optoelectronic technologies.
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Elementos |
Producción |
Investigación |
Ficticio |
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Parámetros de cristal |
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Politito |
4H |
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Error de orientación de la superficie |
4±0.15° |
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Parámetros eléctricos |
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Dopante |
nitrógeno de tipo N |
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Resistividad |
0.015-0.025ohm · cm |
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Parámetros mecánicos |
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Diámetro |
150.0 ± 0.2 mm |
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Espesor |
350 ± 25 µm |
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Orientación plana primaria |
[1-100]±5° |
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Longitud plana primaria |
47.5 ± 1.5 mm |
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Plano secundario |
Ninguno |
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TTV |
≤5 µm |
≤10 µm |
≤15 µm |
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LTV |
≤3 μm (5 mm*5 mm) |
≤5 μm (5 mm*5 mm) |
≤10 μm (5 mm*5 mm) |
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Arco |
-15 μm ~ 15 μm |
-35 μm ~ 35 μm |
-45 μm ~ 45 μm |
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Urdimbre |
≤35 µm |
≤45 µm |
≤55 µm |
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Rugosidad delantera (SI-FACE) (AFM) |
RA≤0.2Nm (5 μm*5 μm) |
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Estructura |
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Densidad de micropipe |
<1 ea/cm2 |
<10 ea/cm2 |
<15 ea/cm2 |
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Impurezas de metal |
≤5E10atoms/cm2 |
N / A |
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BPD |
≤1500 ea/cm2 |
≤3000 ea/cm2 |
N / A |
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TSD |
≤500 ea/cm2 |
≤1000 ea/cm2 |
N / A |
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Calidad frontal |
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Frente |
Si |
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Acabado superficial |
SI-FACE CMP |
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Partículas |
≤60ea/oblea (tamaño ≥0.3 μm) |
N / A |
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Arañazos |
≤5ea/mm. Longitud acumulativa ≤diameter |
Longitud acumulativa ≤2*diámetro |
N / A |
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Peel de naranja/pits/manchas/estrías/grietas/contaminación |
Ninguno |
N / A |
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Chips de borde/sangría/placas hexagonales |
Ninguno |
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Áreas de politype |
Ninguno |
Área acumulada ≤20% |
Área acumulada ≤30% |
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Marcado láser delantero |
Ninguno |
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Calidad espalda |
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Final |
CMP C-FACE |
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Arañazos |
≤5EA/mm, longitud acumulativa ≤2*diámetro |
N / A |
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Defectos posteriores (chips/muescas de borde) |
Ninguno |
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Rugosidad |
RA≤0.2Nm (5 μm*5 μm) |
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Marcado láser de espalda |
1 mm (desde el borde superior) |
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Borde |
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Borde |
Chaflán |
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Embalaje |
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Embalaje |
Lista de EPI con embalaje de vacío Embalaje de cassette de múltiples obras |
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*Notas: "NA" significa que ningún elemento de solicitud no mencionado puede referirse a SEMI-STD. |
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