4″ 6″ High Purity Semi-Insulating SiC Ingot

Semicera’s 4”6” High Purity Semi-Insulating SiC Ingots are meticulously crafted for advanced electronic and optoelectronic applications. Featuring superior thermal conductivity and electrical resistivity, these ingots provide a robust foundation for high-performance devices. Semicera ensures consistent quality and reliability in every product.

Semicera’s 4”6” High Purity Semi-Insulating SiC Ingots are designed to meet the exacting standards of the semiconductor industry. These ingots are produced with a focus on purity and consistency, making them an ideal choice for high-power and high-frequency applications where performance is paramount.

The unique properties of these SiC ingots, including high thermal conductivity and excellent electrical resistivity, make them particularly suited for use in power electronics and microwave devices. Their semi-insulating nature allows for effective heat dissipation and minimal electrical interference, leading to more efficient and reliable components.

Semicera employs state-of-the-art manufacturing processes to produce ingots with exceptional crystal quality and uniformity. This precision ensures that each ingot can be reliably used in sensitive applications, such as high-frequency amplifiers, laser diodes, and other optoelectronic devices.

Available in both 4-inch and 6-inch sizes, Semicera’s SiC ingots provide the flexibility needed for various production scales and technological requirements. Whether for research and development or mass production, these ingots deliver the performance and durability that modern electronic systems demand.

By choosing Semicera’s High Purity Semi-Insulating SiC Ingots, you are investing in a product that combines advanced material science with unparalleled manufacturing expertise. Semicera is dedicated to supporting the innovation and growth of the semiconductor industry, offering materials that enable the development of cutting-edge electronic devices.

Elementos

Producción

Investigación

Ficticio

Parámetros de cristal

Politito

4H

Error de orientación de la superficie

4±0.15°

Parámetros eléctricos

Dopante

nitrógeno de tipo N

Resistividad

0.015-0.025ohm · cm

Parámetros mecánicos

Diámetro

150.0 ± 0.2 mm

Espesor

350 ± 25 µm

Orientación plana primaria

[1-100]±5°

Longitud plana primaria

47.5 ± 1.5 mm

Plano secundario

Ninguno

TTV

≤5 µm

≤10 µm

≤15 µm

LTV

≤3 μm (5 mm*5 mm)

≤5 μm (5 mm*5 mm)

≤10 μm (5 mm*5 mm)

Arco

-15 μm ~ 15 μm

-35 μm ~ 35 μm

-45 μm ~ 45 μm

Urdimbre

≤35 µm

≤45 µm

≤55 µm

Rugosidad delantera (SI-FACE) (AFM)

RA≤0.2Nm (5 μm*5 μm)

Estructura

Densidad de micropipe

<1 ea/cm2

<10 ea/cm2

<15 ea/cm2

Impurezas de metal

≤5E10atoms/cm2

N / A

BPD

≤1500 ea/cm2

≤3000 ea/cm2

N / A

TSD

≤500 ea/cm2

≤1000 ea/cm2

N / A

Calidad frontal

Frente

Si

Acabado superficial

SI-FACE CMP

Partículas

≤60ea/oblea (tamaño ≥0.3 μm)

N / A

Arañazos

≤5ea/mm. Longitud acumulativa ≤diameter

Longitud acumulativa ≤2*diámetro

N / A

Peel de naranja/pits/manchas/estrías/grietas/contaminación

Ninguno

N / A

Chips de borde/sangría/placas hexagonales

Ninguno

Áreas de politype

Ninguno

Área acumulada ≤20%

Área acumulada ≤30%

Marcado láser delantero

Ninguno

Calidad espalda

Final

CMP C-FACE

Arañazos

≤5EA/mm, longitud acumulativa ≤2*diámetro

N / A

Defectos posteriores (chips/muescas de borde)

Ninguno

Rugosidad

RA≤0.2Nm (5 μm*5 μm)

Marcado láser de espalda

1 mm (desde el borde superior)

Borde

Borde

Chaflán

Embalaje

Embalaje

Lista de EPI con embalaje de vacío

Embalaje de cassette de múltiples obras

*Notas: "NA" significa que ningún elemento de solicitud no mencionado puede referirse a SEMI-STD.

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Obleas de sic

Nuevo

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