Semicera’s 4”6” High Purity Semi-Insulating SiC Ingots are meticulously crafted for advanced electronic and optoelectronic applications. Featuring superior thermal conductivity and electrical resistivity, these ingots provide a robust foundation for high-performance devices. Semicera ensures consistent quality and reliability in every product.
Semicera’s 4”6” High Purity Semi-Insulating SiC Ingots are designed to meet the exacting standards of the semiconductor industry. These ingots are produced with a focus on purity and consistency, making them an ideal choice for high-power and high-frequency applications where performance is paramount.
The unique properties of these SiC ingots, including high thermal conductivity and excellent electrical resistivity, make them particularly suited for use in power electronics and microwave devices. Their semi-insulating nature allows for effective heat dissipation and minimal electrical interference, leading to more efficient and reliable components.
Semicera employs state-of-the-art manufacturing processes to produce ingots with exceptional crystal quality and uniformity. This precision ensures that each ingot can be reliably used in sensitive applications, such as high-frequency amplifiers, laser diodes, and other optoelectronic devices.
Available in both 4-inch and 6-inch sizes, Semicera’s SiC ingots provide the flexibility needed for various production scales and technological requirements. Whether for research and development or mass production, these ingots deliver the performance and durability that modern electronic systems demand.
By choosing Semicera’s High Purity Semi-Insulating SiC Ingots, you are investing in a product that combines advanced material science with unparalleled manufacturing expertise. Semicera is dedicated to supporting the innovation and growth of the semiconductor industry, offering materials that enable the development of cutting-edge electronic devices.
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Elementos |
Producción |
Investigación |
Ficticio |
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Parámetros de cristal |
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Politito |
4H |
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Error de orientación de la superficie |
4±0.15° |
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Parámetros eléctricos |
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Dopante |
nitrógeno de tipo N |
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Resistividad |
0.015-0.025ohm · cm |
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Parámetros mecánicos |
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Diámetro |
150.0 ± 0.2 mm |
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Espesor |
350 ± 25 µm |
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Orientación plana primaria |
[1-100]±5° |
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Longitud plana primaria |
47.5 ± 1.5 mm |
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Plano secundario |
Ninguno |
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TTV |
≤5 µm |
≤10 µm |
≤15 µm |
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LTV |
≤3 μm (5 mm*5 mm) |
≤5 μm (5 mm*5 mm) |
≤10 μm (5 mm*5 mm) |
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Arco |
-15 μm ~ 15 μm |
-35 μm ~ 35 μm |
-45 μm ~ 45 μm |
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Urdimbre |
≤35 µm |
≤45 µm |
≤55 µm |
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Rugosidad delantera (SI-FACE) (AFM) |
RA≤0.2Nm (5 μm*5 μm) |
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Estructura |
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Densidad de micropipe |
<1 ea/cm2 |
<10 ea/cm2 |
<15 ea/cm2 |
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Impurezas de metal |
≤5E10atoms/cm2 |
N / A |
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BPD |
≤1500 ea/cm2 |
≤3000 ea/cm2 |
N / A |
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TSD |
≤500 ea/cm2 |
≤1000 ea/cm2 |
N / A |
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Calidad frontal |
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Frente |
Si |
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Acabado superficial |
SI-FACE CMP |
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Partículas |
≤60ea/oblea (tamaño ≥0.3 μm) |
N / A |
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Arañazos |
≤5ea/mm. Longitud acumulativa ≤diameter |
Longitud acumulativa ≤2*diámetro |
N / A |
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Peel de naranja/pits/manchas/estrías/grietas/contaminación |
Ninguno |
N / A |
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Chips de borde/sangría/placas hexagonales |
Ninguno |
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Áreas de politype |
Ninguno |
Área acumulada ≤20% |
Área acumulada ≤30% |
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Marcado láser delantero |
Ninguno |
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Calidad espalda |
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Final |
CMP C-FACE |
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Arañazos |
≤5EA/mm, longitud acumulativa ≤2*diámetro |
N / A |
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Defectos posteriores (chips/muescas de borde) |
Ninguno |
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Rugosidad |
RA≤0.2Nm (5 μm*5 μm) |
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Marcado láser de espalda |
1 mm (desde el borde superior) |
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Borde |
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Borde |
Chaflán |
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Embalaje |
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Embalaje |
Lista de EPI con embalaje de vacío Embalaje de cassette de múltiples obras |
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*Notas: "NA" significa que ningún elemento de solicitud no mencionado puede referirse a SEMI-STD. |
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