Semicera’s 8 Inch N-type SiC Wafers are engineered for cutting-edge applications in high-power and high-frequency electronics. These wafers provide superior electrical and thermal properties, ensuring efficient performance in demanding environments. Semicera delivers innovation and reliability in semiconductor materials.
Semicera’s 8 Inch N-type SiC Wafers are at the forefront of semiconductor innovation, providing a solid base for the development of high-performance electronic devices. These wafers are designed to meet the rigorous demands of modern electronic applications, from power electronics to high-frequency circuits.
The N-type doping in these SiC wafers enhances their electrical conductivity, making them ideal for a wide range of applications, including power diodes, transistors, and amplifiers. The superior conductivity ensures minimal energy loss and efficient operation, which are critical for devices operating at high frequencies and power levels.
Semicera employs advanced manufacturing techniques to produce SiC wafers with exceptional surface uniformity and minimal defects. This level of precision is essential for applications that require consistent performance and durability, such as in aerospace, automotive, and telecommunications industries.
Incorporating Semicera’s 8 Inch N-type SiC Wafers into your production line provides a foundation for creating components that can withstand harsh environments and high temperatures. These wafers are perfect for applications in power conversion, RF technology, and other demanding fields.
Choosing Semicera’s 8 Inch N-type SiC Wafers means investing in a product that combines high-quality material science with precise engineering. Semicera is committed to advancing the capabilities of semiconductor technologies, offering solutions that enhance the efficiency and reliability of your electronic devices.
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Elementos |
Producción |
Investigación |
Ficticio |
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Parámetros de cristal |
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Politito |
4H |
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Error de orientación de la superficie |
4±0.15° |
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Parámetros eléctricos |
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Dopante |
nitrógeno de tipo N |
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Resistividad |
0.015-0.025ohm · cm |
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Parámetros mecánicos |
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Diámetro |
150.0 ± 0.2 mm |
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Espesor |
350 ± 25 µm |
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Orientación plana primaria |
[1-100]±5° |
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Longitud plana primaria |
47.5 ± 1.5 mm |
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Plano secundario |
Ninguno |
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TTV |
≤5 µm |
≤10 µm |
≤15 µm |
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LTV |
≤3 μm (5 mm*5 mm) |
≤5 μm (5 mm*5 mm) |
≤10 μm (5 mm*5 mm) |
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Arco |
-15 μm ~ 15 μm |
-35 μm ~ 35 μm |
-45 μm ~ 45 μm |
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Urdimbre |
≤35 µm |
≤45 µm |
≤55 µm |
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Rugosidad delantera (SI-FACE) (AFM) |
RA≤0.2Nm (5 μm*5 μm) |
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Estructura |
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Densidad de micropipe |
<1 ea/cm2 |
<10 ea/cm2 |
<15 ea/cm2 |
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Impurezas de metal |
≤5E10atoms/cm2 |
N / A |
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BPD |
≤1500 ea/cm2 |
≤3000 ea/cm2 |
N / A |
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TSD |
≤500 ea/cm2 |
≤1000 ea/cm2 |
N / A |
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Calidad frontal |
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Frente |
Si |
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Acabado superficial |
SI-FACE CMP |
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Partículas |
≤60ea/oblea (tamaño ≥0.3 μm) |
N / A |
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Arañazos |
≤5ea/mm. Longitud acumulativa ≤diameter |
Longitud acumulativa ≤2*diámetro |
N / A |
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Peel de naranja/pits/manchas/estrías/grietas/contaminación |
Ninguno |
N / A |
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Chips de borde/sangría/placas hexagonales |
Ninguno |
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Áreas de politype |
Ninguno |
Área acumulada ≤20% |
Área acumulada ≤30% |
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Marcado láser delantero |
Ninguno |
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Calidad espalda |
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Final |
CMP C-FACE |
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Arañazos |
≤5EA/mm, longitud acumulativa ≤2*diámetro |
N / A |
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Defectos posteriores (chips/muescas de borde) |
Ninguno |
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Rugosidad |
RA≤0.2Nm (5 μm*5 μm) |
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Marcado láser de espalda |
1 mm (desde el borde superior) |
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Borde |
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Borde |
Chaflán |
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Embalaje |
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Embalaje |
Lista de EPI con embalaje de vacío Embalaje de cassette de múltiples obras |
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*Notas: "NA" significa que ningún elemento de solicitud no mencionado puede referirse a SEMI-STD. |
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