Our company provides SiC coating process services by CVD method on the surface of graphite, ceramics and other materials, so that special gases containing carbon and silicon react at high temperature to obtain high purity SiC molecules, molecules deposited on the surface of the coated materials, forming SiC protective layer.
Blue/green LED epitaxy from semicera offers cutting-edge solutions for high-performance LED manufacturing. Designed to support advanced epitaxial growth processes, semicera’s Blue/green LED epitaxy technology enhances efficiency and precision in producing blue and green LEDs, critical for various optoelectronic applications. Utilizing state-of-the-art Si Epitaxy and SiC Epitaxy, this solution ensures excellent quality and durability.
In the manufacturing process, MOCVD Susceptor plays a crucial role, along with components like PSS Etching Carrier, ICP Etching Carrier, and RTP Carrier, which optimize the epitaxial growth environment. Semicera’s Blue/green LED epitaxy is designed to provide stable support for LED Epitaxial Susceptor, Barrel Susceptor, and Monocrystalline Silicon, ensuring the production of consistent, high-quality results.
This epitaxy process is vital for creating Photovoltaic Parts and supports applications such as GaN on SiC Epitaxy, improving overall semiconductor efficiency. Whether in a Pancake Susceptor configuration or used in other advanced setups, semicera’s Blue/green LED epitaxy solutions offer reliable performance, helping manufacturers meet the growing demand for high-quality LED components.
Características principales:
1. Resistencia a la oxidación de alta temperatura:
La resistencia a la oxidación sigue siendo muy buena cuando la temperatura es tan alta como 1600 C.
2. Alta pureza: hecha por deposición de vapor químico en una condición de cloración de alta temperatura.
3. Resistencia a la erosión: alta dureza, superficie compacta, partículas finas.
4. Resistencia a la corrosión: ácido, álcali, sal y reactivos orgánicos.
Especificaciones principales de recubrimiento CVD-SIC
|
Propiedades de SIC-CVD |
||
| Estructura cristalina | FCC β phase | |
| Densidad | g/cm ³ | 3.21 |
| Dureza | Dureza de Vickers | 2500 |
| Tamaño de grano | μm | 2~10 |
| Pureza química | % | 99.99995 |
| Capacidad de calor | J·kg-1 ·K-1 | 640 |
| Temperatura de sublimación | ℃ | 2700 |
| Fuerza del felexural | MPa (RT 4-point) | 415 |
| Módulo de Young | Gpa (4pt bend, 1300℃) | 430 |
| Expansión térmica (CTE) | 10-6K-1 | 4.5 |
| Conductividad térmica | (W/mk) | 300 |
