Semicera offers a comprehensive range of susceptors and graphite components designed for various epitaxy reactors.Through strategic partnerships with industry-leading OEMs, extensive materials expertise, and advanced manufacturing capabilities, Semicera delivers tailored designs to meet the specific requirements of your application. Our commitment to excellence ensures that you receive optimal solutions for your epitaxy reactor needs.
Our company provides SiC coating process services on the surface of graphite, ceramics and other materials by CVD method, so that special gases containing carbon and silicon can react at high temperature to obtain high-purity Sic molecules, which can be deposited on the surface of coated materials to form a SiC protective layer for epitaxy barrel type hy pnotic.
Características principales:
1. Alta pureza Grafito recubierto de SIC
2. Resistencia al calor superior y uniformidad térmica
3. Fine SiC crystal coated for a smooth surface
4. Alta durabilidad contra la limpieza química
Especificaciones principales de recubrimiento CVD-SIC
|
Propiedades de SIC-CVD |
||
| Estructura cristalina | FCC β phase | |
| Densidad | g/cm ³ | 3.21 |
| Dureza | Dureza de Vickers | 2500 |
| Tamaño de grano | μm | 2~10 |
| Pureza química | % | 99.99995 |
| Capacidad de calor | J·kg-1 ·K-1 | 640 |
| Temperatura de sublimación | ℃ | 2700 |
| Fuerza del felexural | MPa (RT 4-point) | 415 |
| Young’ s Modulus | Gpa (4pt bend, 1300℃) | 430 |
| Expansión térmica (CTE) | 10-6K-1 | 4.5 |
| Conductividad térmica | (W/mk) | 300 |
