Ga2O3 Epitaxy

Ga2O3Epitaxy– Enhance your high-power electronic and optoelectronic devices with Semicera’s Ga2O3Epitaxy, offering unmatched performance and reliability for advanced semiconductor applications.

Semicera proudly offers Ga₂O₃ Epitaxy, a state-of-the-art solution designed to push the boundaries of power electronics and optoelectronics. This advanced epitaxial technology leverages the unique properties of Gallium Oxide (Ga₂O₃) to deliver superior performance in demanding applications.

Características clave:

• Exceptional Wide Bandgap: Ga₂O₃ Epitaxy features an ultra-wide bandgap, allowing for higher breakdown voltages and efficient operation in high-power environments.

• High Thermal Conductivity: The epitaxial layer provides excellent thermal conductivity, ensuring stable operation even under high-temperature conditions, making it ideal for high-frequency devices.

• Superior Material Quality: Achieve high crystal quality with minimal defects, ensuring optimal device performance and longevity, especially in critical applications such as power transistors and UV detectors.

• Versatility in Applications: Perfectly suited for power electronics, RF applications, and optoelectronics, providing a reliable foundation for next-generation semiconductor devices.

Discover the potential of Ga₂O₃ Epitaxy with Semicera’s innovative solutions. Our epitaxial products are designed to meet the highest standards of quality and performance, enabling your devices to operate with maximum efficiency and reliability. Choose Semicera for cutting-edge semiconductor technology.

Elementos	Producción	Investigación	Ficticio
Parámetros de cristal
Politito	4H
Error de orientación de la superficie	4±0.15°
Parámetros eléctricos
Dopante	nitrógeno de tipo N
Resistividad	0.015-0.025ohm · cm
Parámetros mecánicos
Diámetro	150.0 ± 0.2 mm
Espesor	350 ± 25 µm
Orientación plana primaria	[1-100]±5°
Longitud plana primaria	47.5 ± 1.5 mm
Plano secundario	Ninguno
TTV	≤5 µm	≤10 µm	≤15 µm
LTV	≤3 μm (5 mm*5 mm)	≤5 μm (5 mm*5 mm)	≤10 μm (5 mm*5 mm)
Arco	-15 μm ~ 15 μm	-35 μm ~ 35 μm	-45 μm ~ 45 μm
Urdimbre	≤35 µm	≤45 µm	≤55 µm
Rugosidad delantera (SI-FACE) (AFM)	RA≤0.2Nm (5 μm*5 μm)
Estructura
Densidad de micropipe	<1 ea/cm2	<10 ea/cm2	<15 ea/cm2
Impurezas de metal	≤5E10atoms/cm2		N / A
BPD	≤1500 ea/cm2	≤3000 ea/cm2	N / A
TSD	≤500 ea/cm2	≤1000 ea/cm2	N / A
Calidad frontal
Frente	Si
Acabado superficial	SI-FACE CMP
Partículas	≤60ea/oblea (tamaño ≥0.3 μm)	N / A
Arañazos	≤5ea/mm. Longitud acumulativa ≤diameter	Longitud acumulativa ≤2*diámetro	N / A
Peel de naranja/pits/manchas/estrías/grietas/contaminación	Ninguno		N / A
Chips de borde/sangría/placas hexagonales	Ninguno
Áreas de politype	Ninguno	Área acumulada ≤20%	Área acumulada ≤30%
Marcado láser delantero	Ninguno
Calidad espalda
Final	CMP C-FACE
Arañazos	≤5EA/mm, longitud acumulativa ≤2*diámetro	N / A
Defectos posteriores (chips/muescas de borde)	Ninguno
Rugosidad	RA≤0.2Nm (5 μm*5 μm)
Marcado láser de espalda	1 mm (desde el borde superior)
Borde
Borde	Chaflán
Embalaje
Embalaje	Lista de EPI con embalaje de vacío Embalaje de cassette de múltiples obras
*Notas: "NA" significa que ningún elemento de solicitud no mencionado puede referirse a SEMI-STD.