Ga2O3 Substrate

Ga2O3Substrate– Unlock new possibilities in power electronics and optoelectronics with Semicera’s Ga2O3Substrate, engineered for exceptional performance in high-voltage and high-frequency applications.

Semicera is proud to present the Ga₂O₃ Substrate, a cutting-edge material poised to revolutionize power electronics and optoelectronics. Gallium Oxide (Ga₂O₃) substrates are known for their ultra-wide bandgap, making them ideal for high-power and high-frequency devices.

Características clave:

• Ultra-Wide Bandgap: Ga₂O3 offers a bandgap of approximately 4.8 eV, significantly enhancing its ability to handle high voltages and temperatures compared to traditional materials like Silicon and GaN.

• High Breakdown Voltage: With an exceptional breakdown field, the Ga₂O₃ Substrate is perfect for devices requiring high-voltage operation, ensuring greater efficiency and reliability.

• Thermal Stability: The material’s superior thermal stability makes it suitable for applications in extreme environments, maintaining performance even under harsh conditions.

• Versatile Applications: Ideal for use in high-efficiency power transistors, UV optoelectronic devices, and more, providing a robust foundation for advanced electronic systems.

Experience the future of semiconductor technology with Semicera’s Ga₂O₃ Substrate. Designed to meet the growing demands of high-power and high-frequency electronics, this substrate sets a new standard for performance and durability. Trust Semicera to deliver innovative solutions for your most challenging applications.

Elementos	Producción	Investigación	Ficticio
Parámetros de cristal
Politito	4H
Error de orientación de la superficie	4±0.15°
Parámetros eléctricos
Dopante	nitrógeno de tipo N
Resistividad	0.015-0.025ohm · cm
Parámetros mecánicos
Diámetro	150.0 ± 0.2 mm
Espesor	350 ± 25 µm
Orientación plana primaria	[1-100]±5°
Longitud plana primaria	47.5 ± 1.5 mm
Plano secundario	Ninguno
TTV	≤5 µm	≤10 µm	≤15 µm
LTV	≤3 μm (5 mm*5 mm)	≤5 μm (5 mm*5 mm)	≤10 μm (5 mm*5 mm)
Arco	-15 μm ~ 15 μm	-35 μm ~ 35 μm	-45 μm ~ 45 μm
Urdimbre	≤35 µm	≤45 µm	≤55 µm
Rugosidad delantera (SI-FACE) (AFM)	RA≤0.2Nm (5 μm*5 μm)
Estructura
Densidad de micropipe	<1 ea/cm2	<10 ea/cm2	<15 ea/cm2
Impurezas de metal	≤5E10atoms/cm2		N / A
BPD	≤1500 ea/cm2	≤3000 ea/cm2	N / A
TSD	≤500 ea/cm2	≤1000 ea/cm2	N / A
Calidad frontal
Frente	Si
Acabado superficial	SI-FACE CMP
Partículas	≤60ea/oblea (tamaño ≥0.3 μm)	N / A
Arañazos	≤5ea/mm. Longitud acumulativa ≤diameter	Longitud acumulativa ≤2*diámetro	N / A
Peel de naranja/pits/manchas/estrías/grietas/contaminación	Ninguno		N / A
Chips de borde/sangría/placas hexagonales	Ninguno
Áreas de politype	Ninguno	Área acumulada ≤20%	Área acumulada ≤30%
Marcado láser delantero	Ninguno
Calidad espalda
Final	CMP C-FACE
Arañazos	≤5EA/mm, longitud acumulativa ≤2*diámetro	N / A
Defectos posteriores (chips/muescas de borde)	Ninguno
Rugosidad	RA≤0.2Nm (5 μm*5 μm)
Marcado láser de espalda	1 mm (desde el borde superior)
Borde
Borde	Chaflán
Embalaje
Embalaje	Lista de EPI con embalaje de vacío Embalaje de cassette de múltiples obras
*Notas: "NA" significa que ningún elemento de solicitud no mencionado puede referirse a SEMI-STD.