Porous tantalum carbide is mainly used for gas phase component filtration, adjusting local temperature gradient, guiding material flow direction, controlling leakage, etc. It can be used with another solid tantalum carbide (compact) or tantalum carbide coating from Semicera Technology to form local components with different flow conductance.
Semicera proporciona recubrimientos especializados de carburo tantalum (TAC) para varios componentes y portadores. El proceso de recubrimiento principal de semicera permite que los recubrimientos de carburo tantálio (TAC) logren una alta pureza, estabilidad de alta temperatura y alta tolerancia química, mejorando la calidad del producto de los cristales SIC/GaN y las capas EPI (Susceptor TAC recubierto de grafito), and extending the life of key reactor components. The use of tantalum carbide TaC coating is to solve the edge problem and improve the quality of crystal growth, and Semicera has breakthrough solved the tantalum carbide coating technology (CVD), reaching the international advanced level.
Después de años de desarrollo, Semicera ha conquistado la tecnología de CVD TAC con los esfuerzos conjuntos del departamento de I + D. Los defectos son fáciles de ocurrir en el proceso de crecimiento de las obleas SIC, pero después de usar TAC, the difference is significant. Below is a comparison of wafers with and without TaC, as well as Semicera’ parts for single crystal growth
In addition, the service life of Semicera’s TaC coating products is longer and more resistant to high temperature than that of SiC coating. After a long time of laboratory measurement data, our TaC can work for a long time at a maximum of 2300 degrees Celsius. The following are some of our samples:
