silicon carbide Ceramic effector for the transfer of wafers in various semiconductor processes

The silicon carbide (SiC) ceramic mechanical arm is manufactured by an isostatic pressing process and high-temperature sintering. This ensures a dense structure, high strength, and excellent dimensional stability.

According to customer design drawings, the product can be precisely machined in terms of overall dimensions, thickness, and shape to meet specific application requirements. It is suitable for high-precision wafer handling and semiconductor automation equipment.

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 Characteristics and advantages

  • High-dimensional accuracy & thermal stability
    Maintains precise dimensions even under high-temperature conditions, ensuring stable performance in semiconductor processes.
  • High stiffness & excellent thermal uniformity
    High specific stiffness prevents long-term bending or deformation, ensuring reliable and repeatable operation.
  • Smooth surface & wear resistance
    Fine surface finish with excellent wear resistance, allowing safe wafer handling and reducing particle contamination.
  • Controlled electrical resistivity (ESD-safe)
    Silicon carbide has a resistivity of 10⁶–10⁸ Ω and is non-magnetic, meeting anti-static (ESD) requirements and preventing charge buildup on wafer surfaces.
  • Good thermal conductivity & low thermal expansion
    Efficient heat dissipation combined with low expansion coefficient ensures stable performance under thermal cycling conditions.

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SiC End Effector

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 Comparison of SIC ceramic materials

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