Silicon Wafer

Semicera Silicon Wafers are the cornerstone of modern semiconductor devices, offering unmatched purity and precision. Designed to meet the stringent demands of high-tech industries, these wafers ensure reliable performance and consistent quality. Trust Semicera for your cutting-edge electronic applications and innovative technology solutions.

Semicera Silicon Wafers are meticulously crafted to serve as the foundation for a wide array of semiconductor devices, from microprocessors to photovoltaic cells. These wafers are engineered with high precision and purity, ensuring optimal performance in various electronic applications.

Manufactured using advanced techniques, Semicera Silicon Wafers exhibit exceptional flatness and uniformity, which are crucial for achieving high yields in semiconductor fabrication. This level of precision helps in minimizing defects and improving the overall efficiency of electronic components.

The superior quality of Semicera Silicon Wafers is evident in their electrical characteristics, which contribute to the enhanced performance of semiconductor devices. With low impurity levels and high crystal quality, these wafers provide the ideal platform for developing high-performance electronics.

Available in various sizes and specifications, Semicera Silicon Wafers can be tailored to meet the specific needs of different industries, including computing, telecommunications, and renewable energy. Whether for large-scale manufacturing or specialized research, these wafers deliver reliable results.

Semicera is committed to supporting the growth and innovation of the semiconductor industry by providing high-quality silicon wafers that meet the highest industry standards. With a focus on precision and reliability, Semicera enables manufacturers to push the boundaries of technology, ensuring their products stay at the forefront of the market.

Elementos

Producción

Investigación

Ficticio

Parámetros de cristal

Politito

4H

Error de orientación de la superficie

4±0.15°

Parámetros eléctricos

Dopante

nitrógeno de tipo N

Resistividad

0.015-0.025ohm · cm

Parámetros mecánicos

Diámetro

150.0 ± 0.2 mm

Espesor

350 ± 25 µm

Orientación plana primaria

[1-100]±5°

Longitud plana primaria

47.5 ± 1.5 mm

Plano secundario

Ninguno

TTV

≤5 µm

≤10 µm

≤15 µm

LTV

≤3 μm (5 mm*5 mm)

≤5 μm (5 mm*5 mm)

≤10 μm (5 mm*5 mm)

Arco

-15 μm ~ 15 μm

-35 μm ~ 35 μm

-45 μm ~ 45 μm

Urdimbre

≤35 µm

≤45 µm

≤55 µm

Rugosidad delantera (SI-FACE) (AFM)

RA≤0.2Nm (5 μm*5 μm)

Estructura

Densidad de micropipe

<1 ea/cm2

<10 ea/cm2

<15 ea/cm2

Impurezas de metal

≤5E10atoms/cm2

N / A

BPD

≤1500 ea/cm2

≤3000 ea/cm2

N / A

TSD

≤500 ea/cm2

≤1000 ea/cm2

N / A

Calidad frontal

Frente

Si

Acabado superficial

SI-FACE CMP

Partículas

≤60ea/oblea (tamaño ≥0.3 μm)

N / A

Arañazos

≤5ea/mm. Longitud acumulativa ≤diameter

Longitud acumulativa ≤2*diámetro

N / A

Peel de naranja/pits/manchas/estrías/grietas/contaminación

Ninguno

N / A

Chips de borde/sangría/placas hexagonales

Ninguno

Áreas de politype

Ninguno

Área acumulada ≤20%

Área acumulada ≤30%

Marcado láser delantero

Ninguno

Calidad espalda

Final

CMP C-FACE

Arañazos

≤5EA/mm, longitud acumulativa ≤2*diámetro

N / A

Defectos posteriores (chips/muescas de borde)

Ninguno

Rugosidad

RA≤0.2Nm (5 μm*5 μm)

Marcado láser de espalda

1 mm (desde el borde superior)

Borde

Borde

Chaflán

Embalaje

Embalaje

Lista de EPI con embalaje de vacío

Embalaje de cassette de múltiples obras

*Notas: "NA" significa que ningún elemento de solicitud no mencionado puede referirse a SEMI-STD.

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Obleas de sic

Nuevo

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