Silicon carbide (SiC) is a key material in the third generation of semiconductors, but its yield rate has been a limiting factor for industry growth. After extensive testing in Semicera’s laboratories, it has been found that sprayed and sintered TaC lacks the necessary purity and uniformity. In contrast, the CVD process ensures a purity level of 5 PPM and excellent uniformity. The use of CVD TaC significantly improves the yield rate of silicon carbide wafers. We welcome discussionsTantalum Carbide CVD Coating Guide Ringto further reduce the costs of SiC wafers.
Semicera proporciona recubrimientos especializados de carburo tantalum (TAC) para varios componentes y portadores. Semicera leading coating process enables tantalum carbide (TaC) coatings to achieve high purity, high temperature stability and high chemical tolerance, improving product quality of SIC/GAN crystals and EPI layers (Graphite coated TaC susceptor), and extending the life of key reactor components. The use of tantalum carbide TaC coating is to solve the edge problem and improve the quality of crystal growth, and Semicera has breakthrough solved the tantalum carbide coating technology (CVD), reaching the international advanced level.
El carburo de silicio (SIC) es un material clave en la tercera generación de semiconductores, pero su tasa de rendimiento ha sido un factor limitante para el crecimiento de la industria. Después de extensas pruebas en los laboratorios de Semicera, se ha encontrado que el TAC rociado y sinterizado carece de la pureza y uniformidad necesarias. En contraste, el proceso de CVD garantiza un nivel de pureza de 5 ppm y una excelente uniformidad. El uso de CVD TAC mejora significativamente la tasa de rendimiento de las obleas de carburo de silicio. Agradecemos las discusiones Anillo de guía de recubrimiento CVD de carburo tantalum Para reducir aún más los costos de las obleas SIC.
After years of development, Semicera has conquered the technology of CVD TaC with the joint efforts of the R&D department. Defects are easy to occur in the growth process of SiC wafers, but after using TaC, the difference is significant. Below is a comparison of wafers with and without TaC, as well as Simicera’ parts for single crystal growth.
Moreover, Semicera’s TaC-coated products exhibit a longer service life and greater high-temperature resistance compared to SiC coatings. Laboratory measurements have demonstrated that our TaC coatings can consistently perform at temperatures up to 2300 degrees Celsius for extended periods. Below are some examples of our samples:
