Wafer boats are key components in the semiconductor manufacturing process. Semiera is able to provide wafer boats that are specially designed and produced for diffusion processes, which play a vital role in the manufacture of high integrated circuits. We are firmly committed to providing the highest quality products at competitive prices and look forward to becoming your long-term partner in China.
High temperature oxidation resistance
Excellent Corrosion resistance
Good Abrasion resistance
High coefficient of heat conductivity
Self-lubricity, low density
High hardness
Customized design.
-Campo resistente al desgaste: buje, placa, boquilla de arena, revestimiento de ciclones, barril de molienda, etc.…
-Campo de alta temperatura: losa SIC, tubo de horno de enfriamiento, tubo radiante, crisol, elemento de calentamiento, rodillo, haz, intercambiador de calor, tubería de aire frío, boquilla de quemador, tubo de protección de termopar, bote SIC, estructura de automóvil del horno, setter, etc.
-Semiconductor de carburo de silicio: bote de obleas SIC, chuck sic, paleta SiC, cassette de SiC, tubo de difusión SIC, horquilla de oblea, placa de succión, vía guía, etc.
-Campo de sello de carburo de silicio: todo tipo de anillo de sellado, rodamiento, buje, etc.
-Campo fotovoltaico: paleta en voladizo, barril de molienda, rodillo de carburo de silicio, etc.
-Campo de batería de litio
| Propiedad | Valor | Method |
| Densidad | 3.21 g/cc | Sink-float and dimension |
| Specific heat | 0.66 J/g °K | Pulsed laser flash |
| Resistencia a la flexión | 450 MPa560 MPa | 4 point bend, RT4 point bend, 1300° |
| Fracture toughness | 2.94 MPa m1/2 | Microindentation |
| Dureza | 2800 | Vicker’s, 500g load |
| Elastic ModulusYoung’s Modulus | 450 GPa430 GPa | 4 pt bend, RT4 pt bend, 1300 °C |
| Grain size | 2 – 10 µm | SEM |
| Thermal Conductivity | 250 W/m °K | Laser flash method, RT |
| Thermal Expansion (CTE) | 4.5 x 10-6 °K | Room temp to 950 °C, silica dilatometer |
| Item | Unidad | Datos | ||||
| RBSiC(SiSiC) | NBSiC | SSiC | RSiC | OSiC | ||
| SiC content | % | 85 | 75 | 99 | 99.9 | ≥99 |
| Free silicon content | % | 15 | 0 | 0 | 0 | 0 |
| Max service temperature | ℃ | 1380 | 1450 | 1650 | 1620 | 1400 |
| Densidad | g/cm3 | 3.02 | 2.75-2.85 | 3.08-3.16 | 2.65-2.75 | 2.75-2.85 |
| Open porosity | % | 0 | 13-15 | 0 | 15-18 | 7-8 |
| Bending strength 20℃ | Мpa | 250 | 160 | 380 | 100 | / |
| Bending strength 1200℃ | Мpa | 280 | 180 | 400 | 120 | / |
| Modulus of elasticity 20℃ | Gpa | 330 | 580 | 420 | 240 | / |
| Modulus of elasticity 1200℃ | Gpa | 300 | / | / | 200 | / |
| Thermal conductivity 1200℃ | W/m.K | 45 | 19.6 | 100-120 | 36.6 | / |
| Coefficient of thermal expansion | K-1X10-6 | 4.5 | 4.7 | 4.1 | 4.69 | / |
| HV | Kg/mm2 | 2115 | / | 2800 | / | / |
The CVD silicon carbide coating on the outer surface of recrystallized silicon carbide ceramic products can reach a purity of more than 99.9999% to meet the needs of customers in the semiconductor industry.
