Por qué el portador de grafito recubierto de SIC es más importante hoy en día

 

By Lucy Zhang (Sales) @ semicera semiconductor technology co., ltd.

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The semiconductor industry relies on precision and durability, making the sic-coated graphite carrier an essential component in modern manufacturing. These carriers excel in high-performance environments due to their exceptional thermal stability and chemical resistance. Their ability to withstand extreme temperatures and corrosive conditions ensures consistent performance during critical processes like wafer handling and thin film growth. Additionally, their advanced coating technology enhances longevity, reducing maintenance needs and operational costs. As demand for high-quality semiconductors grows, these carriers play a pivotal role in meeting the industry’s rigorous standards.

 

The pain points and limitations of pure graphite carriers 

Graphite is prone to oxidation in high-temperature environments, particularly in oxygen-rich or corrosive atmospheres, leading to gradual material degradation and shortened service life. Its relatively porous surface with microporous structures facilitates impurity adsorption or particle release, posing contamination risks and adversely affecting wafer yield. Pure graphite exhibits limited mechanical strength and may deform or crack under prolonged thermal cycling or high-stress conditions.

Additionally, graphite demonstrates poor resistance to certain process gases (such as chlorine and fluorine), making it susceptible to chemical reactions.

In that case, the SiC Coated Graphite Carrier is important because it can meet these needs.

Key Characteristics of SiC coating

Resistencia a la oxidación

It stays stable at temperatures up to 1600℃ in environments with oxygen, and oxidizes much slower than pure graphite. At high temperatures, it does not lose weight or shrink due to oxidation or structural changes, which greatly extends the service life.

Wear Resistance

SiC has a high hardness of HV 2800–3300. Its surface is dense and as smooth as a mirror, which completely stops dust from falling off the graphite, prevents particle contamination, and improves the yield of epitaxial wafers significantly.

Resistencia a la corrosión

In high-temperature epitaxy environments, it can stably resist corrosive gases such as NH₃, HCl, and MO sources (like TMGa, TMAl). It is chemically stable, with no reaction, dissolution or corrosion.

Low density

The SiC coating made by CVD is dense and continuous, with no visible pores or pinholes. It fully covers and seals the graphite substrate, stops process gases from seeping in and impurities from spreading, and fundamentally prevents wafer contamination.

High Temperature Resistance

It can work stably for a long time at up to 1600℃ (in environments with oxygen) and above 1800℃ (in inert gas environments). At high temperatures, it does not soften, decompose or change its structure.

Thermal Conductivity

SiC has a thermal conductivity of 120–150 W/(m·K). It can transfer heat quickly and evenly, ensuring the temperature on the wafer surface is uniform. 

Semicera’s SiC Coated Graphite Carrier

High temperature resistance: normal use at 1600 ℃
High thermal conductivity:  equivalent to graphite material
High hardness:  hardness second only to diamond
Corrosion resistance: strong acid and alkali have no corrosion to it, the corrosion resistance is better than tungsten carbide and alumina
No deformation:  low coefficient of thermal expansion
Thermal shock resistance:  it can withstand sharp temperature changes, resist thermal shock, and has stable performance
Silicon carbide carriers, such as sic etching carrier, ICP etching susceptor, are widely used in semiconductor CVD, vacuum sputtering, etc.     

   

We can provide customers with customized wafer carriers of silicon and silicon carbide materials to meet different applications.   

Comparison with Alternatives

Propiedad	SiC-Coated Graphite Carrier	Pure Graphite	High-Purity SiC (Ceramic)	Quartz (SiO₂)
Estructura	Dense SiC coating + graphite substrate	Layered carbon structure	Fully dense ceramic	Amorphous glass
Max Temp (Air)	1500–1600 °C	400–500 °C (oxidizes)	1600–1700 °C	1000–1200 °C
Max Temp (Inert/Vacuum)	>2000 °C	>2000 °C	>2000 °C	~1200 °C
Resistencia a la oxidación	Excellent (SiO₂ protective layer)	Pobre	Excelente	Moderado
Hardness (Vickers)	2000–3000 HV	10–20 HV	2500–3000 HV	500–600 HV
Thermal Conductivity	100–200 W/m·K	100–200 W/m·K	120–200 W/m·K	1–2 W/m·K
Thermal Shock Resistance	Excelente	Excelente	Moderado	Pobre
Resistencia química	Great (Cl₂, HCl, NH₃ resistant)	Moderado	Excelente	Good (except HF)
Particle Generation	Very low	High (dusting)	Bajo	Moderado
Mechanical Strength	High (composite benefit)	Medium–low	Very high (but brittle)	Bajo

SiC-coated graphite carriers provide the best overall performance compared to alternatives because they combine the high hardness, thermal stability, and chemical inertness of silicon carbide (SiC) with the excellent thermal conductivity and thermal shock resistance of graphite.

The SiC coating (2000–3000 HV) protects against wear, oxidation, and corrosive gases, enabling stable operation in air up to 1500–1600 °C, while the graphite substrate (~100–200 W/m·K) ensures efficient heat distribution and structural resilience. In contrast, pure graphite oxidizes rapidly above ~400–500 °C, bulk SiC ceramics are brittle despite similar hardness, and quartz suffers from low thermal conductivity (~1–2 W/m·K) and limited thermal shock resistance.

As a result, SiC-coated graphite achieves superior durability, cleanliness, and process consistency in demanding applications such as Chemical Vapor Deposition.

Nowadays’ Market

SiC coated graphite substrates are composite materials formed by depositing a dense SiC film on the graphite matrix surface, combining graphite’s high thermal conductivity with SiC’s high-temperature resistance, oxidation resistance, and corrosion resistance. In the semiconductor industry, these materials are widely used as plates and brackets in CVD and MOCVD equipment, maintaining structural stability and preventing contamination under high-temperature and reactive conditions. They also serve as critical substrates and structural components in photovoltaics, LEDs, and high-temperature industrial applications. Their comprehensive performance makes them an ideal material for high-purity, high-temperature processes where both performance and cost-effectiveness are paramount.

 

Choose Semicera

Semicera is a leading supplier of advanced semiconductor ceramics and the only manufacturer in China that can simultaneously provide high-purity silicon carbide ceramic(especially the Recrystallized SiC) and CVD SiC coating. In addition, Semicera is also committed to ceramic fields such as alumina, aluminum nitride, zirconia, and silicon nitride, etc.

The main products including: silicon carbide etching disc, silicon carbide boat tow, High Purity SiC Coated Graphite Wafer Carrier Susceptor, silicon carbide wafer boat(Photovoltaic&Semiconductor), silicon carbide furnace tube, silicon carbide cantilever paddle, silicon carbide chucks, silicon carbide beam, as well as the CVD SiC coating and TaC coating. The products mainly used in the semiconductor and photovoltaic industries, such as equipment for crystal growth, epitaxy, etching, packaging, coating and diffusion furnaces,etc.

Besides, Upholding the principle of delivering optimal services to customers, Semicera also provides customized solutions tailored to clients’ unique and special requirements.