{"id":1391,"date":"2025-09-11T05:28:46","date_gmt":"2025-09-11T05:28:46","guid":{"rendered":"https:\/\/weitai2.globaldeepsea.site\/product\/gan-epitaxy\/"},"modified":"2025-09-11T05:28:51","modified_gmt":"2025-09-11T05:28:51","slug":"gan-epitaxy","status":"publish","type":"product","link":"https:\/\/www.cn-semiconductorparts.com\/es\/product\/gan-epitaxy\/","title":{"rendered":"Epitaxy GaN"},"content":{"rendered":"
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Semicera<\/em> proudly presents its cutting-edge Epitaxy GaN<\/strong> services, designed to meet the ever-evolving needs of the semiconductor industry. Gallium nitride (GaN) is a material known for its exceptional properties, and our epitaxial growth processes ensure that these benefits are fully realized in your devices.<\/span><\/p>\n

High-Performance GaN Layers<\/strong> Semicera<\/em> specializes in the production of high-quality Epitaxy GaN<\/strong> layers, offering unparalleled material purity and structural integrity. These layers are critical for a variety of applications, from power electronics to optoelectronics, where superior performance and reliability are essential. Our precision growth techniques ensure that each GaN layer meets the exacting standards required for cutting-edge devices.<\/span><\/p>\n

Optimized for Efficiency<\/strong> The Epitaxy GaN<\/strong> provided by Semicera is specifically engineered to enhance the efficiency of your electronic components. By delivering low-defect, high-purity GaN layers, we enable devices to operate at higher frequencies and voltages, with reduced power loss. This optimization is key for applications such as high-electron-mobility transistors (HEMTs) and light-emitting diodes (LEDs), where efficiency is paramount.<\/span><\/p>\n

Versatile Application Potential<\/strong> Semicera<\/em>\u2019s Epitaxy GaN<\/strong> is versatile, catering to a broad range of industries and applications. Whether you are developing power amplifiers, RF components, or laser diodes, our GaN epitaxial layers provide the foundation needed for high-performance, reliable devices. Our process can be tailored to meet specific requirements, ensuring that your products achieve optimal results.<\/span><\/p>\n

Commitment to Quality<\/strong> Quality is the cornerstone of Semicera<\/em>\u2019s approach to Epitaxy GaN<\/strong>. We use advanced epitaxial growth technologies and rigorous quality control measures to produce GaN layers that exhibit excellent uniformity, low defect densities, and superior material properties. This commitment to quality ensures that your devices not only meet but exceed industry standards.<\/span><\/p>\n

Innovative Growth Techniques<\/strong> Semicera<\/em> is at the forefront of innovation in the field of Epitaxy GaN<\/strong>. Our team continuously explores new methods and technologies to improve the growth process, delivering GaN layers with enhanced electrical and thermal characteristics. These innovations translate into better-performing devices, capable of meeting the demands of next-generation applications.<\/span><\/p>\n

Customized Solutions for Your Projects<\/strong> Recognizing that each project has unique requirements, Semicera<\/em> offers customized Epitaxy GaN<\/strong> solutions. Whether you need specific doping profiles, layer thicknesses, or surface finishes, we work closely with you to develop a process that meets your exact needs. Our goal is to provide you with GaN layers that are precisely engineered to support your device\u2019s performance and reliability.<\/span><\/p>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

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Elementos<\/p>\n<\/td>\n

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Producci\u00f3n<\/p>\n<\/td>\n

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Investigaci\u00f3n<\/p>\n<\/td>\n

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Ficticio<\/p>\n<\/td>\n<\/tr>\n

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Par\u00e1metros de cristal<\/p>\n<\/td>\n<\/tr>\n

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Politito<\/p>\n<\/td>\n

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4H<\/p>\n<\/td>\n<\/tr>\n

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Error de orientaci\u00f3n de la superficie<\/p>\n<\/td>\n

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4\u00b10.15\u00b0<\/p>\n<\/td>\n<\/tr>\n

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Par\u00e1metros el\u00e9ctricos<\/p>\n<\/td>\n<\/tr>\n

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Dopante<\/p>\n<\/td>\n

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nitr\u00f3geno de tipo N<\/p>\n<\/td>\n<\/tr>\n

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Resistividad<\/p>\n<\/td>\n

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0.015-0.025ohm \u00b7 cm<\/p>\n<\/td>\n<\/tr>\n

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Par\u00e1metros mec\u00e1nicos<\/p>\n<\/td>\n<\/tr>\n

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Di\u00e1metro<\/p>\n<\/td>\n

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150.0 \u00b1 0.2 mm<\/p>\n<\/td>\n<\/tr>\n

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Espesor<\/p>\n<\/td>\n

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350 \u00b1 25 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

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Orientaci\u00f3n plana primaria<\/p>\n<\/td>\n

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[1-100]\u00b15\u00b0<\/p>\n<\/td>\n<\/tr>\n

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Longitud plana primaria<\/p>\n<\/td>\n

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47.5 \u00b1 1.5 mm<\/p>\n<\/td>\n<\/tr>\n

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Plano secundario<\/p>\n<\/td>\n

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Ninguno<\/p>\n<\/td>\n<\/tr>\n

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TTV<\/p>\n<\/td>\n

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\u22645 \u00b5m<\/p>\n<\/td>\n

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\u226410 \u00b5m<\/p>\n<\/td>\n

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\u226415 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

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LTV<\/p>\n<\/td>\n

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\u22643 \u03bcm (5 mm*5 mm)<\/p>\n<\/td>\n

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\u22645 \u03bcm (5 mm*5 mm)<\/p>\n<\/td>\n

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\u226410 \u03bcm (5 mm*5 mm)<\/p>\n<\/td>\n<\/tr>\n

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Arco<\/p>\n<\/td>\n

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-15 \u03bcm ~ 15 \u03bcm<\/p>\n<\/td>\n

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-35 \u03bcm ~ 35 \u03bcm<\/p>\n<\/td>\n

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-45 \u03bcm ~ 45 \u03bcm<\/p>\n<\/td>\n<\/tr>\n

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Urdimbre<\/p>\n<\/td>\n

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\u226435 \u00b5m<\/p>\n<\/td>\n

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\u226445 \u00b5m<\/p>\n<\/td>\n

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\u226455 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

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Rugosidad delantera (SI-FACE) (AFM)<\/p>\n<\/td>\n

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RA\u22640.2Nm (5 \u03bcm*5 \u03bcm)<\/p>\n<\/td>\n<\/tr>\n

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Estructura<\/p>\n<\/td>\n<\/tr>\n

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Densidad de micropipe<\/p>\n<\/td>\n

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<1 ea\/cm2<\/p>\n<\/td>\n

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<10 ea\/cm2<\/p>\n<\/td>\n

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<15 ea\/cm2<\/p>\n<\/td>\n<\/tr>\n

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Impurezas de metal<\/p>\n<\/td>\n

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\u22645E10atoms\/cm2<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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BPD<\/p>\n<\/td>\n

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\u22641500 ea\/cm2<\/p>\n<\/td>\n

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\u22643000 ea\/cm2<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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TSD<\/p>\n<\/td>\n

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\u2264500 ea\/cm2<\/p>\n<\/td>\n

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\u22641000 ea\/cm2<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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Calidad frontal<\/p>\n<\/td>\n<\/tr>\n

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Frente<\/p>\n<\/td>\n

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Si<\/p>\n<\/td>\n<\/tr>\n

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Acabado superficial<\/p>\n<\/td>\n

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SI-FACE CMP<\/p>\n<\/td>\n<\/tr>\n

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Part\u00edculas<\/p>\n<\/td>\n

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\u226460ea\/oblea (tama\u00f1o \u22650.3 \u03bcm)<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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Ara\u00f1azos<\/p>\n<\/td>\n

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\u22645ea\/mm. Longitud acumulativa \u2264diameter<\/p>\n<\/td>\n

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Longitud acumulativa \u22642*di\u00e1metro<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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Peel de naranja\/pits\/manchas\/estr\u00edas\/grietas\/contaminaci\u00f3n<\/p>\n<\/td>\n

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Ninguno<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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Chips de borde\/sangr\u00eda\/placas hexagonales<\/p>\n<\/td>\n

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Ninguno<\/p>\n<\/td>\n<\/tr>\n

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\u00c1reas de politype<\/p>\n<\/td>\n

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Ninguno<\/p>\n<\/td>\n

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\u00c1rea acumulada \u226420%<\/p>\n<\/td>\n

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\u00c1rea acumulada \u226430%<\/p>\n<\/td>\n<\/tr>\n

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Marcado l\u00e1ser delantero<\/p>\n<\/td>\n

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Ninguno<\/p>\n<\/td>\n<\/tr>\n

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Calidad espalda<\/p>\n<\/td>\n<\/tr>\n

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Final<\/p>\n<\/td>\n

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CMP C-FACE<\/p>\n<\/td>\n<\/tr>\n

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Ara\u00f1azos<\/p>\n<\/td>\n

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\u22645EA\/mm, longitud acumulativa \u22642*di\u00e1metro<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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Defectos posteriores (chips\/muescas de borde)<\/p>\n<\/td>\n

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Ninguno<\/p>\n<\/td>\n<\/tr>\n

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Rugosidad<\/p>\n<\/td>\n

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RA\u22640.2Nm (5 \u03bcm*5 \u03bcm)<\/p>\n<\/td>\n<\/tr>\n

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Marcado l\u00e1ser de espalda<\/p>\n<\/td>\n

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1 mm (desde el borde superior)<\/p>\n<\/td>\n<\/tr>\n

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Borde<\/p>\n<\/td>\n<\/tr>\n

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Borde<\/p>\n<\/td>\n

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Chafl\u00e1n<\/p>\n<\/td>\n<\/tr>\n

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Embalaje<\/p>\n<\/td>\n<\/tr>\n

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Embalaje<\/p>\n<\/td>\n

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Lista de EPI con embalaje de vac\u00edo<\/p>\n

Embalaje de cassette de m\u00faltiples obras<\/p>\n<\/td>\n<\/tr>\n

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*Notas: \"NA\" significa que ning\u00fan elemento de solicitud no mencionado puede referirse a SEMI-STD.<\/p>\n<\/td>\n<\/tr>\n<\/tbody>\n<\/table><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

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\"tech_1_2_size\" <\/img><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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\"Obleas <\/img><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/div>","protected":false},"excerpt":{"rendered":"

GaN Epitaxy is a cornerstone in the production of high-performance semiconductor devices, offering exceptional efficiency, thermal stability, and reliability. Semicera\u2019s GaN Epitaxy solutions are tailored to meet the demands of cutting-edge applications, ensuring superior quality and consistency in every layer.<\/p>","protected":false},"featured_media":1056,"comment_status":"closed","ping_status":"open","template":"","meta":[],"product_brand":[],"product_cat":[51,24],"product_tag":[],"class_list":{"0":"post-1391","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-sic-cantilever-paddle","7":"product_cat-silicon-carbide-ceramic","9":"first","10":"instock","11":"product-type-simple"},"_links":{"self":[{"href":"https:\/\/www.cn-semiconductorparts.com\/es\/wp-json\/wp\/v2\/product\/1391","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.cn-semiconductorparts.com\/es\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.cn-semiconductorparts.com\/es\/wp-json\/wp\/v2\/types\/product"}],"replies":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/es\/wp-json\/wp\/v2\/comments?post=1391"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/es\/wp-json\/wp\/v2\/media\/1056"}],"wp:attachment":[{"href":"https:\/\/www.cn-semiconductorparts.com\/es\/wp-json\/wp\/v2\/media?parent=1391"}],"wp:term":[{"taxonomy":"product_brand","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/es\/wp-json\/wp\/v2\/product_brand?post=1391"},{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/es\/wp-json\/wp\/v2\/product_cat?post=1391"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/es\/wp-json\/wp\/v2\/product_tag?post=1391"}],"curies":[{"name":"WP","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}