{"id":1397,"date":"2025-09-11T05:28:53","date_gmt":"2025-09-11T05:28:53","guid":{"rendered":"https:\/\/weitai2.globaldeepsea.site\/product\/silicon-carbide-epitaxy\/"},"modified":"2025-09-11T05:28:55","modified_gmt":"2025-09-11T05:28:55","slug":"silicon-carbide-epitaxy","status":"publish","type":"product","link":"https:\/\/www.cn-semiconductorparts.com\/es\/product\/silicon-carbide-epitaxy\/","title":{"rendered":"Silicon Carbide Epitaxy"},"content":{"rendered":"
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Semicera\u2019s Silicon Carbide Epitaxy<\/strong> is engineered to meet the rigorous demands of modern semiconductor applications. By utilizing advanced epitaxial growth techniques, we ensure that each silicon carbide layer exhibits exceptional crystalline quality, uniformity, and minimal defect density. These characteristics are crucial for developing high-performance power electronics, where efficiency and thermal management are paramount.<\/span><\/p>\n

The Silicon Carbide Epitaxy<\/strong> process at Semicera is optimized to produce epitaxial layers with precise thickness and doping control, ensuring consistent performance across a range of devices. This level of precision is essential for applications in electric vehicles, renewable energy systems, and high-frequency communications, where reliability and efficiency are critical.<\/span><\/p>\n

Moreover, Semicera\u2019s Silicon Carbide Epitaxy<\/strong> offers enhanced thermal conductivity and higher breakdown voltage, making it the preferred choice for devices that operate under extreme conditions. These properties contribute to longer device lifetimes and improved overall system efficiency, particularly in high-power and high-temperature environments.<\/span><\/p>\n

Semicera also provides customization options for Silicon Carbide Epitaxy<\/strong>, allowing for tailored solutions that meet specific device requirements. Whether for research or large-scale production, our epitaxial layers are designed to support the next generation of semiconductor innovations, enabling the development of more powerful, efficient, and reliable electronic devices.<\/span><\/p>\n

By integrating cutting-edge technology and stringent quality control processes, Semicera ensures that our Silicon Carbide Epitaxy<\/strong> products not only meet but exceed industry standards. This commitment to excellence makes our epitaxial layers the ideal foundation for advanced semiconductor applications, paving the way for breakthroughs in power electronics and optoelectronics.<\/span><\/p>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

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Elementos<\/p>\n<\/td>\n

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Producci\u00f3n<\/p>\n<\/td>\n

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Investigaci\u00f3n<\/p>\n<\/td>\n

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Ficticio<\/p>\n<\/td>\n<\/tr>\n

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Par\u00e1metros de cristal<\/p>\n<\/td>\n<\/tr>\n

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Politito<\/p>\n<\/td>\n

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4H<\/p>\n<\/td>\n<\/tr>\n

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Error de orientaci\u00f3n de la superficie<\/p>\n<\/td>\n

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4\u00b10.15\u00b0<\/p>\n<\/td>\n<\/tr>\n

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Par\u00e1metros el\u00e9ctricos<\/p>\n<\/td>\n<\/tr>\n

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Dopante<\/p>\n<\/td>\n

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nitr\u00f3geno de tipo N<\/p>\n<\/td>\n<\/tr>\n

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Resistividad<\/p>\n<\/td>\n

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0.015-0.025ohm \u00b7 cm<\/p>\n<\/td>\n<\/tr>\n

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Par\u00e1metros mec\u00e1nicos<\/p>\n<\/td>\n<\/tr>\n

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Di\u00e1metro<\/p>\n<\/td>\n

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150.0 \u00b1 0.2 mm<\/p>\n<\/td>\n<\/tr>\n

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Espesor<\/p>\n<\/td>\n

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350 \u00b1 25 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

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Orientaci\u00f3n plana primaria<\/p>\n<\/td>\n

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[1-100]\u00b15\u00b0<\/p>\n<\/td>\n<\/tr>\n

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Longitud plana primaria<\/p>\n<\/td>\n

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47.5 \u00b1 1.5 mm<\/p>\n<\/td>\n<\/tr>\n

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Plano secundario<\/p>\n<\/td>\n

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Ninguno<\/p>\n<\/td>\n<\/tr>\n

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TTV<\/p>\n<\/td>\n

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\u22645 \u00b5m<\/p>\n<\/td>\n

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\u226410 \u00b5m<\/p>\n<\/td>\n

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\u226415 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

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LTV<\/p>\n<\/td>\n

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\u22643 \u03bcm (5 mm*5 mm)<\/p>\n<\/td>\n

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\u22645 \u03bcm (5 mm*5 mm)<\/p>\n<\/td>\n

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\u226410 \u03bcm (5 mm*5 mm)<\/p>\n<\/td>\n<\/tr>\n

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Arco<\/p>\n<\/td>\n

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-15 \u03bcm ~ 15 \u03bcm<\/p>\n<\/td>\n

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-35 \u03bcm ~ 35 \u03bcm<\/p>\n<\/td>\n

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-45 \u03bcm ~ 45 \u03bcm<\/p>\n<\/td>\n<\/tr>\n

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Urdimbre<\/p>\n<\/td>\n

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\u226435 \u00b5m<\/p>\n<\/td>\n

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\u226445 \u00b5m<\/p>\n<\/td>\n

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\u226455 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

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Rugosidad delantera (SI-FACE) (AFM)<\/p>\n<\/td>\n

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RA\u22640.2Nm (5 \u03bcm*5 \u03bcm)<\/p>\n<\/td>\n<\/tr>\n

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Estructura<\/p>\n<\/td>\n<\/tr>\n

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Densidad de micropipe<\/p>\n<\/td>\n

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<1 ea\/cm2<\/p>\n<\/td>\n

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<10 ea\/cm2<\/p>\n<\/td>\n

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<15 ea\/cm2<\/p>\n<\/td>\n<\/tr>\n

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Impurezas de metal<\/p>\n<\/td>\n

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\u22645E10atoms\/cm2<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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BPD<\/p>\n<\/td>\n

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\u22641500 ea\/cm2<\/p>\n<\/td>\n

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\u22643000 ea\/cm2<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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TSD<\/p>\n<\/td>\n

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\u2264500 ea\/cm2<\/p>\n<\/td>\n

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\u22641000 ea\/cm2<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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Calidad frontal<\/p>\n<\/td>\n<\/tr>\n

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Frente<\/p>\n<\/td>\n

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Si<\/p>\n<\/td>\n<\/tr>\n

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Acabado superficial<\/p>\n<\/td>\n

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SI-FACE CMP<\/p>\n<\/td>\n<\/tr>\n

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Part\u00edculas<\/p>\n<\/td>\n

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\u226460ea\/oblea (tama\u00f1o \u22650.3 \u03bcm)<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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Ara\u00f1azos<\/p>\n<\/td>\n

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\u22645ea\/mm. Longitud acumulativa \u2264diameter<\/p>\n<\/td>\n

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Longitud acumulativa \u22642*di\u00e1metro<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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Peel de naranja\/pits\/manchas\/estr\u00edas\/grietas\/contaminaci\u00f3n<\/p>\n<\/td>\n

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Ninguno<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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Chips de borde\/sangr\u00eda\/placas hexagonales<\/p>\n<\/td>\n

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Ninguno<\/p>\n<\/td>\n<\/tr>\n

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\u00c1reas de politype<\/p>\n<\/td>\n

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Ninguno<\/p>\n<\/td>\n

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\u00c1rea acumulada \u226420%<\/p>\n<\/td>\n

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\u00c1rea acumulada \u226430%<\/p>\n<\/td>\n<\/tr>\n

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Marcado l\u00e1ser delantero<\/p>\n<\/td>\n

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Ninguno<\/p>\n<\/td>\n<\/tr>\n

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Calidad espalda<\/p>\n<\/td>\n<\/tr>\n

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Final<\/p>\n<\/td>\n

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CMP C-FACE<\/p>\n<\/td>\n<\/tr>\n

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Ara\u00f1azos<\/p>\n<\/td>\n

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\u22645EA\/mm, longitud acumulativa \u22642*di\u00e1metro<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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Defectos posteriores (chips\/muescas de borde)<\/p>\n<\/td>\n

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Ninguno<\/p>\n<\/td>\n<\/tr>\n

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Rugosidad<\/p>\n<\/td>\n

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RA\u22640.2Nm (5 \u03bcm*5 \u03bcm)<\/p>\n<\/td>\n<\/tr>\n

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Marcado l\u00e1ser de espalda<\/p>\n<\/td>\n

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1 mm (desde el borde superior)<\/p>\n<\/td>\n<\/tr>\n

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Borde<\/p>\n<\/td>\n<\/tr>\n

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Borde<\/p>\n<\/td>\n

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Chafl\u00e1n<\/p>\n<\/td>\n<\/tr>\n

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Embalaje<\/p>\n<\/td>\n<\/tr>\n

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Embalaje<\/p>\n<\/td>\n

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Lista de EPI con embalaje de vac\u00edo<\/p>\n

Embalaje de cassette de m\u00faltiples obras<\/p>\n<\/td>\n<\/tr>\n

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*Notas: \"NA\" significa que ning\u00fan elemento de solicitud no mencionado puede referirse a SEMI-STD.<\/p>\n<\/td>\n<\/tr>\n<\/tbody>\n<\/table><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

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\"tech_1_2_size\" <\/img><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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\"Obleas <\/img><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/div>","protected":false},"excerpt":{"rendered":"

Silicon Carbide Epitaxy\u2013 High-quality epitaxial layers tailored for advanced semiconductor applications, offering superior performance and reliability for power electronics and optoelectronic devices.<\/p>","protected":false},"featured_media":1099,"comment_status":"closed","ping_status":"open","template":"","meta":[],"product_brand":[],"product_cat":[22,21],"product_tag":[],"class_list":{"0":"post-1397","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-porous-graphite","7":"product_cat-specialty-graphite","9":"first","10":"instock","11":"product-type-simple"},"_links":{"self":[{"href":"https:\/\/www.cn-semiconductorparts.com\/es\/wp-json\/wp\/v2\/product\/1397","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.cn-semiconductorparts.com\/es\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.cn-semiconductorparts.com\/es\/wp-json\/wp\/v2\/types\/product"}],"replies":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/es\/wp-json\/wp\/v2\/comments?post=1397"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/es\/wp-json\/wp\/v2\/media\/1099"}],"wp:attachment":[{"href":"https:\/\/www.cn-semiconductorparts.com\/es\/wp-json\/wp\/v2\/media?parent=1397"}],"wp:term":[{"taxonomy":"product_brand","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/es\/wp-json\/wp\/v2\/product_brand?post=1397"},{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/es\/wp-json\/wp\/v2\/product_cat?post=1397"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/es\/wp-json\/wp\/v2\/product_tag?post=1397"}],"curies":[{"name":"WP","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}