{"id":1402,"date":"2025-09-11T05:28:53","date_gmt":"2025-09-11T05:28:53","guid":{"rendered":"https:\/\/weitai2.globaldeepsea.site\/product\/2%e2%80%b3-gallium-oxide-substrates\/"},"modified":"2025-09-11T05:28:56","modified_gmt":"2025-09-11T05:28:56","slug":"2%e2%80%b3-gallium-oxide-substrates","status":"publish","type":"product","link":"https:\/\/www.cn-semiconductorparts.com\/es\/product\/2\u2033-gallium-oxide-substrates\/","title":{"rendered":"Sustratos de \u00f3xido de galio de 2 \u2033"},"content":{"rendered":"
\n
\n
\n
\n
\n
\n
\n
\n
\n
\n

Semicera<\/em> is excited to offer 2″ Gallium Oxide Substrates<\/strong>, a cutting-edge material designed to enhance the performance of advanced semiconductor devices. These substrates, made from Gallium Oxide (Ga2<\/sub>O3<\/sub>), feature an ultra-wide bandgap, making them an ideal choice for high-power, high-frequency, and UV optoelectronic applications.<\/span><\/p>\n

\u00a0<\/p>\n

Caracter\u00edsticas clave:<\/strong><\/span><\/p>\n

<\/strong>\u00a0 \u00a0 \u00a0 \u00a0\u2022\u00a0 Ultra-Wide Bandgap<\/strong>: El 2″ Gallium Oxide Substrates<\/strong> provide an outstanding bandgap of approximately 4.8 eV, allowing for higher voltage and temperature operation, far exceeding the capabilities of traditional semiconductor materials like silicon.<\/span><\/p>\n

\u00a0 \u00a0 \u00a0 \u00a0\u2022\u00a0\u00a0<\/strong>Exceptional Breakdown Voltage<\/strong>: These substrates enable devices to handle significantly higher voltages, making them perfect for power electronics, especially in high-voltage applications.<\/span><\/p>\n

\u00a0 \u00a0 \u00a0 \u00a0\u2022\u00a0\u00a0<\/strong>Excellent Thermal Conductivity<\/strong>: With superior thermal stability, these substrates maintain consistent performance even in extreme thermal environments, ideal for high-power and high-temperature applications.<\/span><\/p>\n

\u00a0 \u00a0 \u00a0 \u00a0\u2022\u00a0\u00a0<\/strong>High-Quality Material<\/strong>: El 2″ Gallium Oxide Substrates<\/strong> offer low defect densities and high crystalline quality, ensuring the reliable and efficient performance of your semiconductor devices.<\/span><\/p>\n

\u00a0 \u00a0 \u00a0 \u00a0\u2022\u00a0\u00a0<\/strong>Versatile Applications<\/strong>: These substrates are suited for a range of applications, including power transistors, Schottky diodes, and UV-C LED devices, offering a robust foundation for both power and optoelectronic innovations.<\/span><\/p>\n

\u00a0<\/p>\n

Unlock the full potential of your semiconductor devices with Semicera\u2019s 2″ Gallium Oxide Substrates<\/strong>. Our substrates are designed to meet the demanding needs of today\u2019s advanced applications, ensuring high performance, reliability, and efficiency. Choose Semicera for state-of-the-art semiconductor materials that drive innovation.<\/span><\/p>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

\n
\n
\n
\n
\n
\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
\n

Elementos<\/p>\n<\/td>\n

\n

Producci\u00f3n<\/p>\n<\/td>\n

\n

Investigaci\u00f3n<\/p>\n<\/td>\n

\n

Ficticio<\/p>\n<\/td>\n<\/tr>\n

\n

Par\u00e1metros de cristal<\/p>\n<\/td>\n<\/tr>\n

\n

Politito<\/p>\n<\/td>\n

\n

4H<\/p>\n<\/td>\n<\/tr>\n

\n

Error de orientaci\u00f3n de la superficie<\/p>\n<\/td>\n

\n

4\u00b10.15\u00b0<\/p>\n<\/td>\n<\/tr>\n

\n

Par\u00e1metros el\u00e9ctricos<\/p>\n<\/td>\n<\/tr>\n

\n

Dopante<\/p>\n<\/td>\n

\n

nitr\u00f3geno de tipo N<\/p>\n<\/td>\n<\/tr>\n

\n

Resistividad<\/p>\n<\/td>\n

\n

0.015-0.025ohm \u00b7 cm<\/p>\n<\/td>\n<\/tr>\n

\n

Par\u00e1metros mec\u00e1nicos<\/p>\n<\/td>\n<\/tr>\n

\n

Di\u00e1metro<\/p>\n<\/td>\n

\n

150.0 \u00b1 0.2 mm<\/p>\n<\/td>\n<\/tr>\n

\n

Espesor<\/p>\n<\/td>\n

\n

350 \u00b1 25 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

\n

Orientaci\u00f3n plana primaria<\/p>\n<\/td>\n

\n

[1-100]\u00b15\u00b0<\/p>\n<\/td>\n<\/tr>\n

\n

Longitud plana primaria<\/p>\n<\/td>\n

\n

47.5 \u00b1 1.5 mm<\/p>\n<\/td>\n<\/tr>\n

\n

Plano secundario<\/p>\n<\/td>\n

\n

Ninguno<\/p>\n<\/td>\n<\/tr>\n

\n

TTV<\/p>\n<\/td>\n

\n

\u22645 \u00b5m<\/p>\n<\/td>\n

\n

\u226410 \u00b5m<\/p>\n<\/td>\n

\n

\u226415 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

\n

LTV<\/p>\n<\/td>\n

\n

\u22643 \u03bcm (5 mm*5 mm)<\/p>\n<\/td>\n

\n

\u22645 \u03bcm (5 mm*5 mm)<\/p>\n<\/td>\n

\n

\u226410 \u03bcm (5 mm*5 mm)<\/p>\n<\/td>\n<\/tr>\n

\n

Arco<\/p>\n<\/td>\n

\n

-15 \u03bcm ~ 15 \u03bcm<\/p>\n<\/td>\n

\n

-35 \u03bcm ~ 35 \u03bcm<\/p>\n<\/td>\n

\n

-45 \u03bcm ~ 45 \u03bcm<\/p>\n<\/td>\n<\/tr>\n

\n

Urdimbre<\/p>\n<\/td>\n

\n

\u226435 \u00b5m<\/p>\n<\/td>\n

\n

\u226445 \u00b5m<\/p>\n<\/td>\n

\n

\u226455 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

\n

Rugosidad delantera (SI-FACE) (AFM)<\/p>\n<\/td>\n

\n

RA\u22640.2Nm (5 \u03bcm*5 \u03bcm)<\/p>\n<\/td>\n<\/tr>\n

\n

Estructura<\/p>\n<\/td>\n<\/tr>\n

\n

Densidad de micropipe<\/p>\n<\/td>\n

\n

<1 ea\/cm2<\/p>\n<\/td>\n

\n

<10 ea\/cm2<\/p>\n<\/td>\n

\n

<15 ea\/cm2<\/p>\n<\/td>\n<\/tr>\n

\n

Impurezas de metal<\/p>\n<\/td>\n

\n

\u22645E10atoms\/cm2<\/p>\n<\/td>\n

\n

N \/ A<\/p>\n<\/td>\n<\/tr>\n

\n

BPD<\/p>\n<\/td>\n

\n

\u22641500 ea\/cm2<\/p>\n<\/td>\n

\n

\u22643000 ea\/cm2<\/p>\n<\/td>\n

\n

N \/ A<\/p>\n<\/td>\n<\/tr>\n

\n

TSD<\/p>\n<\/td>\n

\n

\u2264500 ea\/cm2<\/p>\n<\/td>\n

\n

\u22641000 ea\/cm2<\/p>\n<\/td>\n

\n

N \/ A<\/p>\n<\/td>\n<\/tr>\n

\n

Calidad frontal<\/p>\n<\/td>\n<\/tr>\n

\n

Frente<\/p>\n<\/td>\n

\n

Si<\/p>\n<\/td>\n<\/tr>\n

\n

Acabado superficial<\/p>\n<\/td>\n

\n

SI-FACE CMP<\/p>\n<\/td>\n<\/tr>\n

\n

Part\u00edculas<\/p>\n<\/td>\n

\n

\u226460ea\/oblea (tama\u00f1o \u22650.3 \u03bcm)<\/p>\n<\/td>\n

\n

N \/ A<\/p>\n<\/td>\n<\/tr>\n

\n

Ara\u00f1azos<\/p>\n<\/td>\n

\n

\u22645ea\/mm. Longitud acumulativa \u2264diameter<\/p>\n<\/td>\n

\n

Longitud acumulativa \u22642*di\u00e1metro<\/p>\n<\/td>\n

\n

N \/ A<\/p>\n<\/td>\n<\/tr>\n

\n

Peel de naranja\/pits\/manchas\/estr\u00edas\/grietas\/contaminaci\u00f3n<\/p>\n<\/td>\n

\n

Ninguno<\/p>\n<\/td>\n

\n

N \/ A<\/p>\n<\/td>\n<\/tr>\n

\n

Chips de borde\/sangr\u00eda\/placas hexagonales<\/p>\n<\/td>\n

\n

Ninguno<\/p>\n<\/td>\n<\/tr>\n

\n

\u00c1reas de politype<\/p>\n<\/td>\n

\n

Ninguno<\/p>\n<\/td>\n

\n

\u00c1rea acumulada \u226420%<\/p>\n<\/td>\n

\n

\u00c1rea acumulada \u226430%<\/p>\n<\/td>\n<\/tr>\n

\n

Marcado l\u00e1ser delantero<\/p>\n<\/td>\n

\n

Ninguno<\/p>\n<\/td>\n<\/tr>\n

\n

Calidad espalda<\/p>\n<\/td>\n<\/tr>\n

\n

Final<\/p>\n<\/td>\n

\n

CMP C-FACE<\/p>\n<\/td>\n<\/tr>\n

\n

Ara\u00f1azos<\/p>\n<\/td>\n

\n

\u22645EA\/mm, longitud acumulativa \u22642*di\u00e1metro<\/p>\n<\/td>\n

\n

N \/ A<\/p>\n<\/td>\n<\/tr>\n

\n

Defectos posteriores (chips\/muescas de borde)<\/p>\n<\/td>\n

\n

Ninguno<\/p>\n<\/td>\n<\/tr>\n

\n

Rugosidad<\/p>\n<\/td>\n

\n

RA\u22640.2Nm (5 \u03bcm*5 \u03bcm)<\/p>\n<\/td>\n<\/tr>\n

\n

Marcado l\u00e1ser de espalda<\/p>\n<\/td>\n

\n

1 mm (desde el borde superior)<\/p>\n<\/td>\n<\/tr>\n

\n

Borde<\/p>\n<\/td>\n<\/tr>\n

\n

Borde<\/p>\n<\/td>\n

\n

Chafl\u00e1n<\/p>\n<\/td>\n<\/tr>\n

\n

Embalaje<\/p>\n<\/td>\n<\/tr>\n

\n

Embalaje<\/p>\n<\/td>\n

\n

Lista de EPI con embalaje de vac\u00edo<\/p>\n

Embalaje de cassette de m\u00faltiples obras<\/p>\n<\/td>\n<\/tr>\n

\n

*Notas: \"NA\" significa que ning\u00fan elemento de solicitud no mencionado puede referirse a SEMI-STD.<\/p>\n<\/td>\n<\/tr>\n<\/tbody>\n<\/table><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

\n
\n
\n
\n
\n
\n
\"tech_1_2_size\" <\/img><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
\n
\n
\n
\n
\n
\n
\"Obleas <\/img><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/div>","protected":false},"excerpt":{"rendered":"

2\u2033 Gallium Oxide Substrates\u2013 Optimize your semiconductor devices with Semicera\u2019s high-quality 2\u2033 Gallium Oxide Substrates, engineered for superior performance in power electronics and UV applications.<\/p>","protected":false},"featured_media":758,"comment_status":"closed","ping_status":"open","template":"","meta":[],"product_brand":[],"product_cat":[22,21],"product_tag":[],"class_list":{"0":"post-1402","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-porous-graphite","7":"product_cat-specialty-graphite","9":"first","10":"instock","11":"product-type-simple"},"_links":{"self":[{"href":"https:\/\/www.cn-semiconductorparts.com\/es\/wp-json\/wp\/v2\/product\/1402","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.cn-semiconductorparts.com\/es\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.cn-semiconductorparts.com\/es\/wp-json\/wp\/v2\/types\/product"}],"replies":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/es\/wp-json\/wp\/v2\/comments?post=1402"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/es\/wp-json\/wp\/v2\/media\/758"}],"wp:attachment":[{"href":"https:\/\/www.cn-semiconductorparts.com\/es\/wp-json\/wp\/v2\/media?parent=1402"}],"wp:term":[{"taxonomy":"product_brand","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/es\/wp-json\/wp\/v2\/product_brand?post=1402"},{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/es\/wp-json\/wp\/v2\/product_cat?post=1402"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/es\/wp-json\/wp\/v2\/product_tag?post=1402"}],"curies":[{"name":"WP","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}