{"id":1410,"date":"2025-09-11T05:28:53","date_gmt":"2025-09-11T05:28:53","guid":{"rendered":"https:\/\/weitai2.globaldeepsea.site\/product\/silicon-on-insulator-wafer\/"},"modified":"2026-04-29T15:33:50","modified_gmt":"2026-04-29T07:33:50","slug":"silicon-on-insulator-wafer","status":"publish","type":"product","link":"https:\/\/www.cn-semiconductorparts.com\/es\/product\/silicon-on-insulator-wafer\/","title":{"rendered":"Silicon On Insulator Wafer"},"content":{"rendered":"
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Semicera\u2019s Silicon On Insulator (SOI) Wafer is at the forefront of semiconductor innovation, offering enhanced electrical isolation and superior thermal performance. The SOI structure, consisting of a thin silicon layer on an insulating substrate, provides critical benefits for high-performance electronic devices.<\/p>\n

Our SOI wafers are designed to minimize parasitic capacitance and leakage currents, which is essential for developing high-speed and low-power integrated circuits. This advanced technology ensures that devices operate more efficiently, with improved speed and reduced energy consumption, crucial for modern electronics.<\/p>\n

The advanced manufacturing processes employed by Semicera guarantee the production of SOI wafers with excellent uniformity and consistency. This quality is vital for applications in telecommunications, automotive, and consumer electronics, where reliable and high-performing components are required.<\/p>\n

In addition to their electrical benefits, Semicera\u2019s SOI wafers offer superior thermal insulation, enhancing heat dissipation and stability in high-density and high-power devices. This feature is particularly valuable in applications that involve significant heat generation and require effective thermal management.<\/p>\n

By choosing Semicera\u2019s Silicon On Insulator Wafer, you invest in a product that supports the advancement of cutting-edge technologies. Our commitment to quality and innovation ensures that our SOI wafers meet the rigorous demands of today\u2019s semiconductor industry, providing the foundation for next-generation electronic devices.<\/p>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

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\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
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Elementos<\/p>\n<\/td>\n

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Producci\u00f3n<\/p>\n<\/td>\n

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Investigaci\u00f3n<\/p>\n<\/td>\n

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Ficticio<\/p>\n<\/td>\n<\/tr>\n

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Par\u00e1metros de cristal<\/p>\n<\/td>\n<\/tr>\n

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Politito<\/p>\n<\/td>\n

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4H<\/p>\n<\/td>\n<\/tr>\n

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Error de orientaci\u00f3n de la superficie<\/p>\n<\/td>\n

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4\u00b10.15\u00b0<\/p>\n<\/td>\n<\/tr>\n

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Par\u00e1metros el\u00e9ctricos<\/p>\n<\/td>\n<\/tr>\n

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Dopante<\/p>\n<\/td>\n

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nitr\u00f3geno de tipo N<\/p>\n<\/td>\n<\/tr>\n

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Resistividad<\/p>\n<\/td>\n

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0.015-0.025ohm \u00b7 cm<\/p>\n<\/td>\n<\/tr>\n

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Par\u00e1metros mec\u00e1nicos<\/p>\n<\/td>\n<\/tr>\n

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Di\u00e1metro<\/p>\n<\/td>\n

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150.0 \u00b1 0.2 mm<\/p>\n<\/td>\n<\/tr>\n

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Espesor<\/p>\n<\/td>\n

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350 \u00b1 25 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

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Orientaci\u00f3n plana primaria<\/p>\n<\/td>\n

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[1-100]\u00b15\u00b0<\/p>\n<\/td>\n<\/tr>\n

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Longitud plana primaria<\/p>\n<\/td>\n

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47.5 \u00b1 1.5 mm<\/p>\n<\/td>\n<\/tr>\n

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Plano secundario<\/p>\n<\/td>\n

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Ninguno<\/p>\n<\/td>\n<\/tr>\n

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TTV<\/p>\n<\/td>\n

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\u22645 \u00b5m<\/p>\n<\/td>\n

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\u226410 \u00b5m<\/p>\n<\/td>\n

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\u226415 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

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LTV<\/p>\n<\/td>\n

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\u22643 \u03bcm (5 mm*5 mm)<\/p>\n<\/td>\n

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\u22645 \u03bcm (5 mm*5 mm)<\/p>\n<\/td>\n

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\u226410 \u03bcm (5 mm*5 mm)<\/p>\n<\/td>\n<\/tr>\n

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Arco<\/p>\n<\/td>\n

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-15 \u03bcm ~ 15 \u03bcm<\/p>\n<\/td>\n

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-35 \u03bcm ~ 35 \u03bcm<\/p>\n<\/td>\n

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-45 \u03bcm ~ 45 \u03bcm<\/p>\n<\/td>\n<\/tr>\n

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Urdimbre<\/p>\n<\/td>\n

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\u226435 \u00b5m<\/p>\n<\/td>\n

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\u226445 \u00b5m<\/p>\n<\/td>\n

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\u226455 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

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Rugosidad delantera (SI-FACE) (AFM)<\/p>\n<\/td>\n

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RA\u22640.2Nm (5 \u03bcm*5 \u03bcm)<\/p>\n<\/td>\n<\/tr>\n

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Estructura<\/p>\n<\/td>\n<\/tr>\n

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Densidad de micropipe<\/p>\n<\/td>\n

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<1 ea\/cm2<\/p>\n<\/td>\n

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<10 ea\/cm2<\/p>\n<\/td>\n

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<15 ea\/cm2<\/p>\n<\/td>\n<\/tr>\n

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Impurezas de metal<\/p>\n<\/td>\n

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\u22645E10atoms\/cm2<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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BPD<\/p>\n<\/td>\n

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\u22641500 ea\/cm2<\/p>\n<\/td>\n

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\u22643000 ea\/cm2<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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TSD<\/p>\n<\/td>\n

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\u2264500 ea\/cm2<\/p>\n<\/td>\n

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\u22641000 ea\/cm2<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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Calidad frontal<\/p>\n<\/td>\n<\/tr>\n

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Frente<\/p>\n<\/td>\n

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Si<\/p>\n<\/td>\n<\/tr>\n

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Acabado superficial<\/p>\n<\/td>\n

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SI-FACE CMP<\/p>\n<\/td>\n<\/tr>\n

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Part\u00edculas<\/p>\n<\/td>\n

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\u226460ea\/oblea (tama\u00f1o \u22650.3 \u03bcm)<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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Ara\u00f1azos<\/p>\n<\/td>\n

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\u22645ea\/mm. Longitud acumulativa \u2264diameter<\/p>\n<\/td>\n

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Longitud acumulativa \u22642*di\u00e1metro<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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Peel de naranja\/pits\/manchas\/estr\u00edas\/grietas\/contaminaci\u00f3n<\/p>\n<\/td>\n

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Ninguno<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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Chips de borde\/sangr\u00eda\/placas hexagonales<\/p>\n<\/td>\n

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Ninguno<\/p>\n<\/td>\n<\/tr>\n

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\u00c1reas de politype<\/p>\n<\/td>\n

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Ninguno<\/p>\n<\/td>\n

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\u00c1rea acumulada \u226420%<\/p>\n<\/td>\n

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\u00c1rea acumulada \u226430%<\/p>\n<\/td>\n<\/tr>\n

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Marcado l\u00e1ser delantero<\/p>\n<\/td>\n

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Ninguno<\/p>\n<\/td>\n<\/tr>\n

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Calidad espalda<\/p>\n<\/td>\n<\/tr>\n

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Final<\/p>\n<\/td>\n

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CMP C-FACE<\/p>\n<\/td>\n<\/tr>\n

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Ara\u00f1azos<\/p>\n<\/td>\n

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\u22645EA\/mm, longitud acumulativa \u22642*di\u00e1metro<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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Defectos posteriores (chips\/muescas de borde)<\/p>\n<\/td>\n

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Ninguno<\/p>\n<\/td>\n<\/tr>\n

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Rugosidad<\/p>\n<\/td>\n

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RA\u22640.2Nm (5 \u03bcm*5 \u03bcm)<\/p>\n<\/td>\n<\/tr>\n

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Marcado l\u00e1ser de espalda<\/p>\n<\/td>\n

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1 mm (desde el borde superior)<\/p>\n<\/td>\n<\/tr>\n

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Borde<\/p>\n<\/td>\n<\/tr>\n

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Borde<\/p>\n<\/td>\n

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Chafl\u00e1n<\/p>\n<\/td>\n<\/tr>\n

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Embalaje<\/p>\n<\/td>\n<\/tr>\n

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Embalaje<\/p>\n<\/td>\n

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Lista de EPI con embalaje de vac\u00edo<\/p>\n

Embalaje de cassette de m\u00faltiples obras<\/p>\n<\/td>\n<\/tr>\n

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*Notas: \"NA\" significa que ning\u00fan elemento de solicitud no mencionado puede referirse a SEMI-STD.<\/p>\n<\/td>\n<\/tr>\n<\/tbody>\n<\/table><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

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\"tech_1_2_size\" <\/img><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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\"Obleas <\/img><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/div>","protected":false},"excerpt":{"rendered":"

Semicera\u2019s Silicon On Insulator (SOI) Wafer provides exceptional electrical isolation and thermal management for high-performance applications. Engineered to deliver superior device efficiency and reliability, these wafers are a prime choice for advanced semiconductor technology. Choose Semicera for cutting-edge SOI wafer solutions.<\/p>","protected":false},"featured_media":876,"comment_status":"closed","ping_status":"open","template":"","meta":[],"product_brand":[],"product_cat":[35,26],"product_tag":[],"class_list":{"0":"post-1410","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-sic-substrate","7":"product_cat-wafer","9":"first","10":"instock","11":"product-type-simple"},"_links":{"self":[{"href":"https:\/\/www.cn-semiconductorparts.com\/es\/wp-json\/wp\/v2\/product\/1410","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.cn-semiconductorparts.com\/es\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.cn-semiconductorparts.com\/es\/wp-json\/wp\/v2\/types\/product"}],"replies":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/es\/wp-json\/wp\/v2\/comments?post=1410"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/es\/wp-json\/wp\/v2\/media\/876"}],"wp:attachment":[{"href":"https:\/\/www.cn-semiconductorparts.com\/es\/wp-json\/wp\/v2\/media?parent=1410"}],"wp:term":[{"taxonomy":"product_brand","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/es\/wp-json\/wp\/v2\/product_brand?post=1410"},{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/es\/wp-json\/wp\/v2\/product_cat?post=1410"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/es\/wp-json\/wp\/v2\/product_tag?post=1410"}],"curies":[{"name":"WP","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}