{"id":1413,"date":"2025-09-11T05:29:00","date_gmt":"2025-09-11T05:29:00","guid":{"rendered":"https:\/\/weitai2.globaldeepsea.site\/product\/p-type-sic-substrate-wafer\/"},"modified":"2026-04-29T15:33:36","modified_gmt":"2026-04-29T07:33:36","slug":"p-type-sic-substrate-wafer","status":"publish","type":"product","link":"https:\/\/www.cn-semiconductorparts.com\/es\/product\/p-type-sic-substrate-wafer\/","title":{"rendered":"Oblea de sustrato sic de tipo P"},"content":{"rendered":"
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Semicera\u2019s P-type SiC Substrate Wafer is a key component for developing advanced electronic and optoelectronic devices. These wafers are specifically designed to provide enhanced performance in high-power and high-temperature environments, supporting the growing demand for efficient and durable components.<\/p>\n

The P-type doping in our SiC wafers ensures improved electrical conductivity and charge carrier mobility. This makes them particularly suitable for applications in power electronics, LEDs, and photovoltaic cells, where low power loss and high efficiency are critical.<\/p>\n

Manufactured with the highest standards of precision and quality, Semicera\u2019s P-type SiC wafers offer excellent surface uniformity and minimal defect rates. These characteristics are vital for industries where consistency and reliability are essential, such as aerospace, automotive, and renewable energy sectors.<\/p>\n

Semicera\u2019s commitment to innovation and excellence is evident in our P-type SiC Substrate Wafer. By integrating these wafers into your production process, you ensure that your devices benefit from the exceptional thermal and electrical properties of SiC, enabling them to operate effectively under challenging conditions.<\/p>\n

Investing in Semicera\u2019s P-type SiC Substrate Wafer means choosing a product that combines cutting-edge material science with meticulous engineering. Semicera is dedicated to supporting the next generation of electronic and optoelectronic technologies, providing the essential components needed for your success in the semiconductor industry.<\/p>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

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Elementos<\/p>\n<\/td>\n

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Producci\u00f3n<\/p>\n<\/td>\n

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Investigaci\u00f3n<\/p>\n<\/td>\n

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Ficticio<\/p>\n<\/td>\n<\/tr>\n

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Par\u00e1metros de cristal<\/p>\n<\/td>\n<\/tr>\n

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Politito<\/p>\n<\/td>\n

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4H<\/p>\n<\/td>\n<\/tr>\n

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Error de orientaci\u00f3n de la superficie<\/p>\n<\/td>\n

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4\u00b10.15\u00b0<\/p>\n<\/td>\n<\/tr>\n

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Par\u00e1metros el\u00e9ctricos<\/p>\n<\/td>\n<\/tr>\n

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Dopante<\/p>\n<\/td>\n

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nitr\u00f3geno de tipo N<\/p>\n<\/td>\n<\/tr>\n

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Resistividad<\/p>\n<\/td>\n

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0.015-0.025ohm \u00b7 cm<\/p>\n<\/td>\n<\/tr>\n

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Par\u00e1metros mec\u00e1nicos<\/p>\n<\/td>\n<\/tr>\n

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Di\u00e1metro<\/p>\n<\/td>\n

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150.0 \u00b1 0.2 mm<\/p>\n<\/td>\n<\/tr>\n

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Espesor<\/p>\n<\/td>\n

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350 \u00b1 25 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

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Orientaci\u00f3n plana primaria<\/p>\n<\/td>\n

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[1-100]\u00b15\u00b0<\/p>\n<\/td>\n<\/tr>\n

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Longitud plana primaria<\/p>\n<\/td>\n

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47.5 \u00b1 1.5 mm<\/p>\n<\/td>\n<\/tr>\n

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Plano secundario<\/p>\n<\/td>\n

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Ninguno<\/p>\n<\/td>\n<\/tr>\n

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TTV<\/p>\n<\/td>\n

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\u22645 \u00b5m<\/p>\n<\/td>\n

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\u226410 \u00b5m<\/p>\n<\/td>\n

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\u226415 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

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LTV<\/p>\n<\/td>\n

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\u22643 \u03bcm (5 mm*5 mm)<\/p>\n<\/td>\n

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\u22645 \u03bcm (5 mm*5 mm)<\/p>\n<\/td>\n

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\u226410 \u03bcm (5 mm*5 mm)<\/p>\n<\/td>\n<\/tr>\n

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Arco<\/p>\n<\/td>\n

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-15 \u03bcm ~ 15 \u03bcm<\/p>\n<\/td>\n

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-35 \u03bcm ~ 35 \u03bcm<\/p>\n<\/td>\n

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-45 \u03bcm ~ 45 \u03bcm<\/p>\n<\/td>\n<\/tr>\n

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Urdimbre<\/p>\n<\/td>\n

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\u226435 \u00b5m<\/p>\n<\/td>\n

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\u226445 \u00b5m<\/p>\n<\/td>\n

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\u226455 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

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Rugosidad delantera (SI-FACE) (AFM)<\/p>\n<\/td>\n

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RA\u22640.2Nm (5 \u03bcm*5 \u03bcm)<\/p>\n<\/td>\n<\/tr>\n

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Estructura<\/p>\n<\/td>\n<\/tr>\n

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Densidad de micropipe<\/p>\n<\/td>\n

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<1 ea\/cm2<\/p>\n<\/td>\n

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<10 ea\/cm2<\/p>\n<\/td>\n

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<15 ea\/cm2<\/p>\n<\/td>\n<\/tr>\n

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Impurezas de metal<\/p>\n<\/td>\n

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\u22645E10atoms\/cm2<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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BPD<\/p>\n<\/td>\n

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\u22641500 ea\/cm2<\/p>\n<\/td>\n

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\u22643000 ea\/cm2<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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TSD<\/p>\n<\/td>\n

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\u2264500 ea\/cm2<\/p>\n<\/td>\n

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\u22641000 ea\/cm2<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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Calidad frontal<\/p>\n<\/td>\n<\/tr>\n

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Frente<\/p>\n<\/td>\n

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Si<\/p>\n<\/td>\n<\/tr>\n

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Acabado superficial<\/p>\n<\/td>\n

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SI-FACE CMP<\/p>\n<\/td>\n<\/tr>\n

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Part\u00edculas<\/p>\n<\/td>\n

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\u226460ea\/oblea (tama\u00f1o \u22650.3 \u03bcm)<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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Ara\u00f1azos<\/p>\n<\/td>\n

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\u22645ea\/mm. Longitud acumulativa \u2264diameter<\/p>\n<\/td>\n

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Longitud acumulativa \u22642*di\u00e1metro<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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Peel de naranja\/pits\/manchas\/estr\u00edas\/grietas\/contaminaci\u00f3n<\/p>\n<\/td>\n

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Ninguno<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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Chips de borde\/sangr\u00eda\/placas hexagonales<\/p>\n<\/td>\n

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Ninguno<\/p>\n<\/td>\n<\/tr>\n

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\u00c1reas de politype<\/p>\n<\/td>\n

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Ninguno<\/p>\n<\/td>\n

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\u00c1rea acumulada \u226420%<\/p>\n<\/td>\n

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\u00c1rea acumulada \u226430%<\/p>\n<\/td>\n<\/tr>\n

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Marcado l\u00e1ser delantero<\/p>\n<\/td>\n

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Ninguno<\/p>\n<\/td>\n<\/tr>\n

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Calidad espalda<\/p>\n<\/td>\n<\/tr>\n

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Final<\/p>\n<\/td>\n

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CMP C-FACE<\/p>\n<\/td>\n<\/tr>\n

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Ara\u00f1azos<\/p>\n<\/td>\n

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\u22645EA\/mm, longitud acumulativa \u22642*di\u00e1metro<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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Defectos posteriores (chips\/muescas de borde)<\/p>\n<\/td>\n

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Ninguno<\/p>\n<\/td>\n<\/tr>\n

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Rugosidad<\/p>\n<\/td>\n

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RA\u22640.2Nm (5 \u03bcm*5 \u03bcm)<\/p>\n<\/td>\n<\/tr>\n

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Marcado l\u00e1ser de espalda<\/p>\n<\/td>\n

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1 mm (desde el borde superior)<\/p>\n<\/td>\n<\/tr>\n

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Borde<\/p>\n<\/td>\n<\/tr>\n

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Borde<\/p>\n<\/td>\n

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Chafl\u00e1n<\/p>\n<\/td>\n<\/tr>\n

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Embalaje<\/p>\n<\/td>\n<\/tr>\n

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Embalaje<\/p>\n<\/td>\n

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Lista de EPI con embalaje de vac\u00edo<\/p>\n

Embalaje de cassette de m\u00faltiples obras<\/p>\n<\/td>\n<\/tr>\n

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*Notas: \"NA\" significa que ning\u00fan elemento de solicitud no mencionado puede referirse a SEMI-STD.<\/p>\n<\/td>\n<\/tr>\n<\/tbody>\n<\/table><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

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\"tech_1_2_size\" <\/img><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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\"Obleas <\/img><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/div>","protected":false},"excerpt":{"rendered":"

Semicera\u2019s P-type SiC Substrate Wafer is engineered for superior electronic and optoelectronic applications. These wafers provide exceptional conductivity and thermal stability, making them ideal for high-performance devices. With Semicera, expect precision and reliability in your P-type SiC substrate wafers.<\/p>","protected":false},"featured_media":1110,"comment_status":"closed","ping_status":"open","template":"","meta":[],"product_brand":[],"product_cat":[31,42],"product_tag":[],"class_list":{"0":"post-1413","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-more-ceramic-products","7":"product_cat-silicon-nitride-ceramic","9":"first","10":"instock","11":"product-type-simple"},"_links":{"self":[{"href":"https:\/\/www.cn-semiconductorparts.com\/es\/wp-json\/wp\/v2\/product\/1413","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.cn-semiconductorparts.com\/es\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.cn-semiconductorparts.com\/es\/wp-json\/wp\/v2\/types\/product"}],"replies":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/es\/wp-json\/wp\/v2\/comments?post=1413"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/es\/wp-json\/wp\/v2\/media\/1110"}],"wp:attachment":[{"href":"https:\/\/www.cn-semiconductorparts.com\/es\/wp-json\/wp\/v2\/media?parent=1413"}],"wp:term":[{"taxonomy":"product_brand","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/es\/wp-json\/wp\/v2\/product_brand?post=1413"},{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/es\/wp-json\/wp\/v2\/product_cat?post=1413"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/es\/wp-json\/wp\/v2\/product_tag?post=1413"}],"curies":[{"name":"WP","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}