{"id":1418,"date":"2025-09-11T05:29:00","date_gmt":"2025-09-11T05:29:00","guid":{"rendered":"https:\/\/weitai2.globaldeepsea.site\/product\/4-inch-high-purity-semi-insulating-hpsi-sic-double-side-polished-wafer-substrate\/"},"modified":"2026-04-29T15:33:38","modified_gmt":"2026-04-29T07:33:38","slug":"4-inch-high-purity-semi-insulating-hpsi-sic-double-side-polished-wafer-substrate","status":"publish","type":"product","link":"https:\/\/www.cn-semiconductorparts.com\/es\/product\/4-inch-high-purity-semi-insulating-hpsi-sic-double-side-polished-wafer-substrate\/","title":{"rendered":"4 Inch High Purity Semi-Insulating HPSI SiC Double-side Polished Wafer Substrate"},"content":{"rendered":"
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Semicera’s 4 Inch High Purity Semi-Insulating (HPSI) SiC Double-side Polished Wafer Substrates are crafted to meet the exacting demands of the semiconductor industry. These substrates are designed with exceptional flatness and purity, offering an optimal platform for cutting-edge electronic devices.<\/span><\/p>\n

These HPSI SiC wafers are distinguished by their superior thermal conductivity and electrical insulation properties, making them an excellent choice for high-frequency and high-power applications. The double-side polishing process ensures minimal surface roughness, which is crucial for enhancing device performance and longevity.<\/span><\/p>\n

The high purity of Semicera\u2019s SiC wafers minimizes defects and impurities, leading to higher yield rates and device reliability. These substrates are suitable for a wide range of applications, including microwave devices, power electronics, and LED technologies, where precision and durability are essential.<\/span><\/p>\n

With a focus on innovation and quality, Semicera utilizes advanced manufacturing techniques to produce wafers that meet the stringent requirements of modern electronics. The double-sided polishing not only improves the mechanical strength but also facilitates better integration with other semiconductor materials.<\/span><\/p>\n

By choosing Semicera\u2019s 4 Inch High Purity Semi-Insulating HPSI SiC Double-side Polished Wafer Substrates, manufacturers can leverage the benefits of enhanced thermal management and electrical insulation, paving the way for the development of more efficient and powerful electronic devices. Semicera continues to lead the industry with its commitment to quality and technological advancement.<\/span><\/p>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

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\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
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Elementos<\/p>\n<\/td>\n

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Producci\u00f3n<\/p>\n<\/td>\n

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Investigaci\u00f3n<\/p>\n<\/td>\n

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Ficticio<\/p>\n<\/td>\n<\/tr>\n

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Par\u00e1metros de cristal<\/p>\n<\/td>\n<\/tr>\n

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Politito<\/p>\n<\/td>\n

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4H<\/p>\n<\/td>\n<\/tr>\n

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Error de orientaci\u00f3n de la superficie<\/p>\n<\/td>\n

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4\u00b10.15\u00b0<\/p>\n<\/td>\n<\/tr>\n

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Par\u00e1metros el\u00e9ctricos<\/p>\n<\/td>\n<\/tr>\n

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Dopante<\/p>\n<\/td>\n

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nitr\u00f3geno de tipo N<\/p>\n<\/td>\n<\/tr>\n

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Resistividad<\/p>\n<\/td>\n

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0.015-0.025ohm \u00b7 cm<\/p>\n<\/td>\n<\/tr>\n

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Par\u00e1metros mec\u00e1nicos<\/p>\n<\/td>\n<\/tr>\n

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Di\u00e1metro<\/p>\n<\/td>\n

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150.0 \u00b1 0.2 mm<\/p>\n<\/td>\n<\/tr>\n

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Espesor<\/p>\n<\/td>\n

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350 \u00b1 25 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

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Orientaci\u00f3n plana primaria<\/p>\n<\/td>\n

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[1-100]\u00b15\u00b0<\/p>\n<\/td>\n<\/tr>\n

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Longitud plana primaria<\/p>\n<\/td>\n

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47.5 \u00b1 1.5 mm<\/p>\n<\/td>\n<\/tr>\n

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Plano secundario<\/p>\n<\/td>\n

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Ninguno<\/p>\n<\/td>\n<\/tr>\n

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TTV<\/p>\n<\/td>\n

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\u22645 \u00b5m<\/p>\n<\/td>\n

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\u226410 \u00b5m<\/p>\n<\/td>\n

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\u226415 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

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LTV<\/p>\n<\/td>\n

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\u22643 \u03bcm (5 mm*5 mm)<\/p>\n<\/td>\n

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\u22645 \u03bcm (5 mm*5 mm)<\/p>\n<\/td>\n

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\u226410 \u03bcm (5 mm*5 mm)<\/p>\n<\/td>\n<\/tr>\n

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Arco<\/p>\n<\/td>\n

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-15 \u03bcm ~ 15 \u03bcm<\/p>\n<\/td>\n

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-35 \u03bcm ~ 35 \u03bcm<\/p>\n<\/td>\n

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-45 \u03bcm ~ 45 \u03bcm<\/p>\n<\/td>\n<\/tr>\n

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Urdimbre<\/p>\n<\/td>\n

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\u226435 \u00b5m<\/p>\n<\/td>\n

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\u226445 \u00b5m<\/p>\n<\/td>\n

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\u226455 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

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Rugosidad delantera (SI-FACE) (AFM)<\/p>\n<\/td>\n

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RA\u22640.2Nm (5 \u03bcm*5 \u03bcm)<\/p>\n<\/td>\n<\/tr>\n

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Estructura<\/p>\n<\/td>\n<\/tr>\n

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Densidad de micropipe<\/p>\n<\/td>\n

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<1 ea\/cm2<\/p>\n<\/td>\n

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<10 ea\/cm2<\/p>\n<\/td>\n

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<15 ea\/cm2<\/p>\n<\/td>\n<\/tr>\n

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Impurezas de metal<\/p>\n<\/td>\n

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\u22645E10atoms\/cm2<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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BPD<\/p>\n<\/td>\n

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\u22641500 ea\/cm2<\/p>\n<\/td>\n

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\u22643000 ea\/cm2<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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TSD<\/p>\n<\/td>\n

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\u2264500 ea\/cm2<\/p>\n<\/td>\n

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\u22641000 ea\/cm2<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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Calidad frontal<\/p>\n<\/td>\n<\/tr>\n

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Frente<\/p>\n<\/td>\n

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Si<\/p>\n<\/td>\n<\/tr>\n

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Acabado superficial<\/p>\n<\/td>\n

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SI-FACE CMP<\/p>\n<\/td>\n<\/tr>\n

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Part\u00edculas<\/p>\n<\/td>\n

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\u226460ea\/oblea (tama\u00f1o \u22650.3 \u03bcm)<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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Ara\u00f1azos<\/p>\n<\/td>\n

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\u22645ea\/mm. Longitud acumulativa \u2264diameter<\/p>\n<\/td>\n

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Longitud acumulativa \u22642*di\u00e1metro<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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Peel de naranja\/pits\/manchas\/estr\u00edas\/grietas\/contaminaci\u00f3n<\/p>\n<\/td>\n

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Ninguno<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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Chips de borde\/sangr\u00eda\/placas hexagonales<\/p>\n<\/td>\n

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Ninguno<\/p>\n<\/td>\n<\/tr>\n

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\u00c1reas de politype<\/p>\n<\/td>\n

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Ninguno<\/p>\n<\/td>\n

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\u00c1rea acumulada \u226420%<\/p>\n<\/td>\n

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\u00c1rea acumulada \u226430%<\/p>\n<\/td>\n<\/tr>\n

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Marcado l\u00e1ser delantero<\/p>\n<\/td>\n

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Ninguno<\/p>\n<\/td>\n<\/tr>\n

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Calidad espalda<\/p>\n<\/td>\n<\/tr>\n

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Final<\/p>\n<\/td>\n

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CMP C-FACE<\/p>\n<\/td>\n<\/tr>\n

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Ara\u00f1azos<\/p>\n<\/td>\n

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\u22645EA\/mm, longitud acumulativa \u22642*di\u00e1metro<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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Defectos posteriores (chips\/muescas de borde)<\/p>\n<\/td>\n

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Ninguno<\/p>\n<\/td>\n<\/tr>\n

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Rugosidad<\/p>\n<\/td>\n

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RA\u22640.2Nm (5 \u03bcm*5 \u03bcm)<\/p>\n<\/td>\n<\/tr>\n

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Marcado l\u00e1ser de espalda<\/p>\n<\/td>\n

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1 mm (desde el borde superior)<\/p>\n<\/td>\n<\/tr>\n

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Borde<\/p>\n<\/td>\n<\/tr>\n

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Borde<\/p>\n<\/td>\n

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Chafl\u00e1n<\/p>\n<\/td>\n<\/tr>\n

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Embalaje<\/p>\n<\/td>\n<\/tr>\n

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Embalaje<\/p>\n<\/td>\n

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Lista de EPI con embalaje de vac\u00edo<\/p>\n

Embalaje de cassette de m\u00faltiples obras<\/p>\n<\/td>\n<\/tr>\n

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*Notas: \"NA\" significa que ning\u00fan elemento de solicitud no mencionado puede referirse a SEMI-STD.<\/p>\n<\/td>\n<\/tr>\n<\/tbody>\n<\/table><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

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\"tech_1_2_size\" <\/img><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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\"Obleas <\/img><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/div>","protected":false},"excerpt":{"rendered":"

Semicera\u2019s 4 Inch High Purity Semi-Insulating (HPSI) SiC Double-side Polished Wafer Substrates are precision-engineered for superior electronic performance. These wafers provide excellent thermal conductivity and electrical insulation, ideal for advanced semiconductor applications. Trust Semicera for unparalleled quality and innovation in wafer technology.<\/p>","protected":false},"featured_media":747,"comment_status":"closed","ping_status":"open","template":"","meta":[],"product_brand":[],"product_cat":[35,26],"product_tag":[],"class_list":{"0":"post-1418","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-sic-substrate","7":"product_cat-wafer","9":"first","10":"instock","11":"product-type-simple"},"_links":{"self":[{"href":"https:\/\/www.cn-semiconductorparts.com\/es\/wp-json\/wp\/v2\/product\/1418","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.cn-semiconductorparts.com\/es\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.cn-semiconductorparts.com\/es\/wp-json\/wp\/v2\/types\/product"}],"replies":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/es\/wp-json\/wp\/v2\/comments?post=1418"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/es\/wp-json\/wp\/v2\/media\/747"}],"wp:attachment":[{"href":"https:\/\/www.cn-semiconductorparts.com\/es\/wp-json\/wp\/v2\/media?parent=1418"}],"wp:term":[{"taxonomy":"product_brand","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/es\/wp-json\/wp\/v2\/product_brand?post=1418"},{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/es\/wp-json\/wp\/v2\/product_cat?post=1418"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/es\/wp-json\/wp\/v2\/product_tag?post=1418"}],"curies":[{"name":"WP","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}