Si Epitaxy

Si Epitaxy– Achieve superior device performance with Semicera’s Si Epitaxy, offering precision-grown silicon layers for advanced semiconductor applications.

Seminer introduces its high-quality Si Epitaxy services, designed to meet the exacting standards of today’s semiconductor industry. Epitaxial silicon layers are critical for the performance and reliability of electronic devices, and our Si Epitaxy solutions ensure that your components achieve optimal functionality.

Precision-Grown Silicon Layers Seminer understands that the foundation of high-performance devices lies in the quality of the materials used. Our Si Epitaxy process is meticulously controlled to produce silicon layers with exceptional uniformity and crystal integrity. These layers are essential for applications ranging from microelectronics to advanced power devices, where consistency and reliability are paramount.

Optimized for Device Performance Le Si Epitaxy services offered by Semicera are tailored to enhance the electrical properties of your devices. By growing high-purity silicon layers with low defect densities, we ensure that your components perform at their best, with improved carrier mobility and minimized electrical resistivity. This optimization is critical for achieving the high-speed and high-efficiency characteristics demanded by modern technology.

Versatility in Applications Seminer’s Si Epitaxy is suitable for a wide range of applications, including the production of CMOS transistors, power MOSFETs, and bipolar junction transistors. Our flexible process allows for customization based on the specific requirements of your project, whether you need thin layers for high-frequency applications or thicker layers for power devices.

Superior Material Quality Quality is at the heart of everything we do at Semicera. Our Si Epitaxy process uses state-of-the-art equipment and techniques to ensure that each silicon layer meets the highest standards of purity and structural integrity. This attention to detail minimizes the occurrence of defects that could impact device performance, resulting in more reliable and longer-lasting components.

Commitment to Innovation Seminer is committed to staying at the forefront of semiconductor technology. Our Si Epitaxy services reflect this commitment, incorporating the latest advancements in epitaxial growth techniques. We continuously refine our processes to deliver silicon layers that meet the evolving needs of the industry, ensuring that your products remain competitive in the market.

Tailored Solutions for Your Needs Understanding that every project is unique, Seminer offers customized Si Epitaxy solutions to match your specific needs. Whether you require particular doping profiles, layer thicknesses, or surface finishes, our team works closely with you to deliver a product that meets your precise specifications.

Articles

Production

Recherche

Factice

Paramètres de cristal

Polytype

4H

Erreur d'orientation de la surface

4±0.15°

Paramètres électriques

Dopant

azote de type N

Résistivité

0,015-0.025ohm · cm

Paramètres mécaniques

Diamètre

150,0 ± 0,2 mm

Épaisseur

350 ± 25 µm

Orientation plate primaire

[1-100]±5°

Longueur plate primaire

47,5 ± 1,5 mm

Plat secondaire

Aucun

TTV

≤5 µm

≤10 µm

≤15 µm

LTV

≤3 μm (5 mm * 5 mm)

≤5 μm (5 mm * 5 mm)

≤10 μm (5 mm * 5 mm)

Arc

-15 μm ~ 15μm

-35 μm ~ 35 μm

-45 μm ~ 45 μm

Chaîne

≤35 µm

≤45 µm

≤55 µm

Rugosité avant (si-face) (AFM)

Ra≤0,2 nm (5 μm * 5 μm)

Structure

Densité de micro-

<1 ea / cm2

<10 ea / cm2

<15 ea / cm2

Impuretés métalliques

≤5E10atoms/cm2

N / A

BPB

≤1500 ea / cm2

≤3000 ea / cm2

N / A

TSD

≤500 ea / cm2

≤1000 ea / cm2

N / A

Qualité avant

Devant

Si

Finition de surface

CMP SI-FACE

Particules

≤60ea / plaquette (taille 0,3 μm)

N / A

Rayures

≤5EA / MM. Longueur cumulative ≤ diamètre

Longueur cumulatif ≤2 * diamètre

N / A

PELLE / PEPES ORANGE / TAPPES / COMMENTS / CRESCHES / CONTAMINATION

Aucun

N / A

Coups de bord / retraits / fracture / plaques hexagonales

Aucun

Zones de polytype

Aucun

Zone cumulative≤20%

Zone cumulative ≤ 30%

Marquage laser avant

Aucun

Qualité du dos

Finition arrière

CMP C-FACE

Rayures

≤5ea / mm, longueur cumulative≤2 * diamètre

N / A

Défauts arrière (puces de bord / retraits)

Aucun

Rugosité du dos

Ra≤0,2 nm (5 μm * 5 μm)

Marquage laser arrière

1 mm (du bord supérieur)

Bord

Bord

Chanfreiner

Conditionnement

Conditionnement

Préparé en épi avec un emballage sous vide

Emballage de cassette multi-wafer

*Remarques: «NA» signifie qu'aucun élément de demande non mentionné ne peut se référer au semi-std.

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