Ga2O3 Substrate

Ga2O3Substrate– Unlock new possibilities in power electronics and optoelectronics with Semicera’s Ga2O3Substrate, engineered for exceptional performance in high-voltage and high-frequency applications.

Semicera is proud to present the Ga₂O₃ Substrate, a cutting-edge material poised to revolutionize power electronics and optoelectronics. Gallium Oxide (Ga₂O₃) substrates are known for their ultra-wide bandgap, making them ideal for high-power and high-frequency devices.

Caractéristiques clés:

• Ultra-Wide Bandgap: Ga₂O3 offers a bandgap of approximately 4.8 eV, significantly enhancing its ability to handle high voltages and temperatures compared to traditional materials like Silicon and GaN.

• High Breakdown Voltage: With an exceptional breakdown field, the Ga₂O₃ Substrate is perfect for devices requiring high-voltage operation, ensuring greater efficiency and reliability.

• Thermal Stability: The material’s superior thermal stability makes it suitable for applications in extreme environments, maintaining performance even under harsh conditions.

• Versatile Applications: Ideal for use in high-efficiency power transistors, UV optoelectronic devices, and more, providing a robust foundation for advanced electronic systems.

Experience the future of semiconductor technology with Semicera’s Ga₂O₃ Substrate. Designed to meet the growing demands of high-power and high-frequency electronics, this substrate sets a new standard for performance and durability. Trust Semicera to deliver innovative solutions for your most challenging applications.

Articles	Production	Recherche	Factice
Paramètres de cristal
Polytype	4H
Erreur d'orientation de la surface	4±0.15°
Paramètres électriques
Dopant	azote de type N
Résistivité	0,015-0.025ohm · cm
Paramètres mécaniques
Diamètre	150,0 ± 0,2 mm
Épaisseur	350 ± 25 µm
Orientation plate primaire	[1-100]±5°
Longueur plate primaire	47,5 ± 1,5 mm
Plat secondaire	Aucun
TTV	≤5 µm	≤10 µm	≤15 µm
LTV	≤3 μm (5 mm * 5 mm)	≤5 μm (5 mm * 5 mm)	≤10 μm (5 mm * 5 mm)
Arc	-15 μm ~ 15μm	-35 μm ~ 35 μm	-45 μm ~ 45 μm
Chaîne	≤35 µm	≤45 µm	≤55 µm
Rugosité avant (si-face) (AFM)	Ra≤0,2 nm (5 μm * 5 μm)
Structure
Densité de micro-	<1 ea / cm2	<10 ea / cm2	<15 ea / cm2
Impuretés métalliques	≤5E10atoms/cm2		N / A
BPB	≤1500 ea / cm2	≤3000 ea / cm2	N / A
TSD	≤500 ea / cm2	≤1000 ea / cm2	N / A
Qualité avant
Devant	Si
Finition de surface	CMP SI-FACE
Particules	≤60ea / plaquette (taille 0,3 μm)	N / A
Rayures	≤5EA / MM. Longueur cumulative ≤ diamètre	Longueur cumulatif ≤2 * diamètre	N / A
PELLE / PEPES ORANGE / TAPPES / COMMENTS / CRESCHES / CONTAMINATION	Aucun		N / A
Coups de bord / retraits / fracture / plaques hexagonales	Aucun
Zones de polytype	Aucun	Zone cumulative≤20%	Zone cumulative ≤ 30%
Marquage laser avant	Aucun
Qualité du dos
Finition arrière	CMP C-FACE
Rayures	≤5ea / mm, longueur cumulative≤2 * diamètre	N / A
Défauts arrière (puces de bord / retraits)	Aucun
Rugosité du dos	Ra≤0,2 nm (5 μm * 5 μm)
Marquage laser arrière	1 mm (du bord supérieur)
Bord
Bord	Chanfreiner
Conditionnement
Conditionnement	Préparé en épi avec un emballage sous vide Emballage de cassette multi-wafer
*Remarques: «NA» signifie qu'aucun élément de demande non mentionné ne peut se référer au semi-std.