Ga2O3 Epitaxy

Ga2O3Epitaxy– Enhance your high-power electronic and optoelectronic devices with Semicera’s Ga2O3Epitaxy, offering unmatched performance and reliability for advanced semiconductor applications.

Seminer proudly offers Ga₂O₃ Epitaxy, a state-of-the-art solution designed to push the boundaries of power electronics and optoelectronics. This advanced epitaxial technology leverages the unique properties of Gallium Oxide (Ga₂O₃) to deliver superior performance in demanding applications.

Caractéristiques clés:

• Exceptional Wide Bandgap: Ga₂O₃ Epitaxy features an ultra-wide bandgap, allowing for higher breakdown voltages and efficient operation in high-power environments.

• High Thermal Conductivity: The epitaxial layer provides excellent thermal conductivity, ensuring stable operation even under high-temperature conditions, making it ideal for high-frequency devices.

• Superior Material Quality: Achieve high crystal quality with minimal defects, ensuring optimal device performance and longevity, especially in critical applications such as power transistors and UV detectors.

• Versatility in Applications: Perfectly suited for power electronics, RF applications, and optoelectronics, providing a reliable foundation for next-generation semiconductor devices.

Discover the potential of Ga₂O₃ Epitaxy with Semicera’s innovative solutions. Our epitaxial products are designed to meet the highest standards of quality and performance, enabling your devices to operate with maximum efficiency and reliability. Choose Semicera for cutting-edge semiconductor technology.

Articles	Production	Recherche	Factice
Paramètres de cristal
Polytype	4H
Erreur d'orientation de la surface	4±0.15°
Paramètres électriques
Dopant	azote de type N
Résistivité	0,015-0.025ohm · cm
Paramètres mécaniques
Diamètre	150,0 ± 0,2 mm
Épaisseur	350 ± 25 µm
Orientation plate primaire	[1-100]±5°
Longueur plate primaire	47,5 ± 1,5 mm
Plat secondaire	Aucun
TTV	≤5 µm	≤10 µm	≤15 µm
LTV	≤3 μm (5 mm * 5 mm)	≤5 μm (5 mm * 5 mm)	≤10 μm (5 mm * 5 mm)
Arc	-15 μm ~ 15μm	-35 μm ~ 35 μm	-45 μm ~ 45 μm
Chaîne	≤35 µm	≤45 µm	≤55 µm
Rugosité avant (si-face) (AFM)	Ra≤0,2 nm (5 μm * 5 μm)
Structure
Densité de micro-	<1 ea / cm2	<10 ea / cm2	<15 ea / cm2
Impuretés métalliques	≤5E10atoms/cm2		N / A
BPB	≤1500 ea / cm2	≤3000 ea / cm2	N / A
TSD	≤500 ea / cm2	≤1000 ea / cm2	N / A
Qualité avant
Devant	Si
Finition de surface	CMP SI-FACE
Particules	≤60ea / plaquette (taille 0,3 μm)	N / A
Rayures	≤5EA / MM. Longueur cumulative ≤ diamètre	Longueur cumulatif ≤2 * diamètre	N / A
PELLE / PEPES ORANGE / TAPPES / COMMENTS / CRESCHES / CONTAMINATION	Aucun		N / A
Coups de bord / retraits / fracture / plaques hexagonales	Aucun
Zones de polytype	Aucun	Zone cumulative≤20%	Zone cumulative ≤ 30%
Marquage laser avant	Aucun
Qualité du dos
Finition arrière	CMP C-FACE
Rayures	≤5ea / mm, longueur cumulative≤2 * diamètre	N / A
Défauts arrière (puces de bord / retraits)	Aucun
Rugosité du dos	Ra≤0,2 nm (5 μm * 5 μm)
Marquage laser arrière	1 mm (du bord supérieur)
Bord
Bord	Chanfreiner
Conditionnement
Conditionnement	Préparé en épi avec un emballage sous vide Emballage de cassette multi-wafer
*Remarques: «NA» signifie qu'aucun élément de demande non mentionné ne peut se référer au semi-std.