4″ 6″ High Purity Semi-Insulating SiC Ingot

Semicera’s 4”6” High Purity Semi-Insulating SiC Ingots are meticulously crafted for advanced electronic and optoelectronic applications. Featuring superior thermal conductivity and electrical resistivity, these ingots provide a robust foundation for high-performance devices. Semicera ensures consistent quality and reliability in every product.

Semicera’s 4”6” High Purity Semi-Insulating SiC Ingots are designed to meet the exacting standards of the semiconductor industry. These ingots are produced with a focus on purity and consistency, making them an ideal choice for high-power and high-frequency applications where performance is paramount.

The unique properties of these SiC ingots, including high thermal conductivity and excellent electrical resistivity, make them particularly suited for use in power electronics and microwave devices. Their semi-insulating nature allows for effective heat dissipation and minimal electrical interference, leading to more efficient and reliable components.

Semicera employs state-of-the-art manufacturing processes to produce ingots with exceptional crystal quality and uniformity. This precision ensures that each ingot can be reliably used in sensitive applications, such as high-frequency amplifiers, laser diodes, and other optoelectronic devices.

Available in both 4-inch and 6-inch sizes, Semicera’s SiC ingots provide the flexibility needed for various production scales and technological requirements. Whether for research and development or mass production, these ingots deliver the performance and durability that modern electronic systems demand.

By choosing Semicera’s High Purity Semi-Insulating SiC Ingots, you are investing in a product that combines advanced material science with unparalleled manufacturing expertise. Semicera is dedicated to supporting the innovation and growth of the semiconductor industry, offering materials that enable the development of cutting-edge electronic devices.

Articles

Production

Recherche

Factice

Paramètres de cristal

Polytype

4H

Erreur d'orientation de la surface

4±0.15°

Paramètres électriques

Dopant

azote de type N

Résistivité

0,015-0.025ohm · cm

Paramètres mécaniques

Diamètre

150,0 ± 0,2 mm

Épaisseur

350 ± 25 µm

Orientation plate primaire

[1-100]±5°

Longueur plate primaire

47,5 ± 1,5 mm

Plat secondaire

Aucun

TTV

≤5 µm

≤10 µm

≤15 µm

LTV

≤3 μm (5 mm * 5 mm)

≤5 μm (5 mm * 5 mm)

≤10 μm (5 mm * 5 mm)

Arc

-15 μm ~ 15μm

-35 μm ~ 35 μm

-45 μm ~ 45 μm

Chaîne

≤35 µm

≤45 µm

≤55 µm

Rugosité avant (si-face) (AFM)

Ra≤0,2 nm (5 μm * 5 μm)

Structure

Densité de micro-

<1 ea / cm2

<10 ea / cm2

<15 ea / cm2

Impuretés métalliques

≤5E10atoms/cm2

N / A

BPB

≤1500 ea / cm2

≤3000 ea / cm2

N / A

TSD

≤500 ea / cm2

≤1000 ea / cm2

N / A

Qualité avant

Devant

Si

Finition de surface

CMP SI-FACE

Particules

≤60ea / plaquette (taille 0,3 μm)

N / A

Rayures

≤5EA / MM. Longueur cumulative ≤ diamètre

Longueur cumulatif ≤2 * diamètre

N / A

PELLE / PEPES ORANGE / TAPPES / COMMENTS / CRESCHES / CONTAMINATION

Aucun

N / A

Coups de bord / retraits / fracture / plaques hexagonales

Aucun

Zones de polytype

Aucun

Zone cumulative≤20%

Zone cumulative ≤ 30%

Marquage laser avant

Aucun

Qualité du dos

Finition arrière

CMP C-FACE

Rayures

≤5ea / mm, longueur cumulative≤2 * diamètre

N / A

Défauts arrière (puces de bord / retraits)

Aucun

Rugosité du dos

Ra≤0,2 nm (5 μm * 5 μm)

Marquage laser arrière

1 mm (du bord supérieur)

Bord

Bord

Chanfreiner

Conditionnement

Conditionnement

Préparé en épi avec un emballage sous vide

Emballage de cassette multi-wafer

*Remarques: «NA» signifie qu'aucun élément de demande non mentionné ne peut se référer au semi-std.

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