Silicon carbide is a new type of ceramics with high cost performance and excellent material properties. Due to features like high strength and hardness, high temperature resistance, great thermal conductivity and chemical corrosion resistance, Silicon Carbide can almost withstand all chemical medium. Therefore, SiC are widely used in oil mining, chemical, machinery and airspace, even nuclear energy and the military have their special demands on SIC. Some normal application we can offer are seal rings for pump, valve and protective armor etc.
Résistance à l'oxydation à haute température
Excellente résistance à la corrosion
Bonne résistance à l'abrasion
Coefficient élevé de conductivité thermique
Auto-lubricité, faible densité
Dureté élevée
Conception personnalisée.
-Champ résistant à l'usure: bague, assiette, buse de sable, doublure du cyclone, grincement du canon, etc.…
-Champ à haute température: dalle SIC, tube de four à trempe, tube rayonnant, creuset, élément de chauffage, rouleau, faisceau, échangeur de chaleur, tuyau à air froid, buse de brûleur, tube de protection du thermocouple, bateau sic, structure de la voiture du four, setter, etc.
-Semi-conducteur en carbure de silicium: bateau à la plaquette SIC, Chuck sic, pagaie SIC, cassette sic, tube de diffusion SIC, fourchette, plaque d'aspiration, guide, etc.
-Champ de joint en carbure de silicium: Toutes sortes d'anneau d'étanchéité, de roulement, de bague, etc.
-Champ photovoltaïque: pagaie en porte-à-faux, baril de broyage, rouleau en carbure de silicium, etc.
-Champ de batterie au lithium
| Propriété | Value | Method |
| Densité | 3.21 g/cc | Sink-float and dimension |
| Specific heat | 0.66 J/g °K | Pulsed laser flash |
| Flexural strength | 450 MPa560 MPa | 4 point bend, RT4 point bend, 1300° |
| Fracture toughness | 2.94 MPa m1/2 | Microindentation |
| Dureté | 2800 | Vicker’s, 500g load |
| Elastic ModulusYoung’s Modulus | 450 GPa430 GPa | 4 pt bend, RT4 pt bend, 1300 °C |
| Grain size | 2 – 10 µm | SEM |
| Thermal Conductivity | 250 W/m °K | Laser flash method, RT |
| Thermal Expansion (CTE) | 4.5 x 10-6 °K | Room temp to 950 °C, silica dilatometer |
| Article | Unité | Data | ||||
| RBSiC(SiSiC) | NBSiC | SSiC | RSiC | OSiC | ||
| SiC content | % | 85 | 75 | 99 | 99.9 | ≥99 |
| Free silicon content | % | 15 | 0 | 0 | 0 | 0 |
| Max service temperature | ℃ | 1380 | 1450 | 1650 | 1620 | 1400 |
| Densité | g/cm3 | 3.02 | 2.75-2.85 | 3.08-3.16 | 2.65-2.75 | 2.75-2.85 |
| Open porosity | % | 0 | 13-15 | 0 | 15-18 | 7-8 |
| Bending strength 20℃ | Мpa | 250 | 160 | 380 | 100 | / |
| Bending strength 1200℃ | Мpa | 280 | 180 | 400 | 120 | / |
| Modulus of elasticity 20℃ | Gpa | 330 | 580 | 420 | 240 | / |
| Modulus of elasticity 1200℃ | Gpa | 300 | / | / | 200 | / |
| Thermal conductivity 1200℃ | W/m.K | 45 | 19.6 | 100-120 | 36.6 | / |
| Coefficient of thermal expansion | K-1X10-6 | 4.5 | 4.7 | 4.1 | 4.69 | / |
| HV | Kg/mm2 | 2115 | / | 2800 | / | / |
The CVD silicon carbide coating on the outer surface of recrystallized silicon carbide ceramic products can reach a purity of more than 99.9999% to meet the needs of customers in the semiconductor industry.
