2″ Gallium Oxide Substrates

2″ Gallium Oxide Substrates– Optimize your semiconductor devices with Semicera’s high-quality 2″ Gallium Oxide Substrates, engineered for superior performance in power electronics and UV applications.

Seminer is excited to offer 2″ Gallium Oxide Substrates, a cutting-edge material designed to enhance the performance of advanced semiconductor devices. These substrates, made from Gallium Oxide (Ga₂O₃), feature an ultra-wide bandgap, making them an ideal choice for high-power, high-frequency, and UV optoelectronic applications.

Caractéristiques clés:

• Ultra-Wide Bandgap: The 2″ Gallium Oxide Substrates provide an outstanding bandgap of approximately 4.8 eV, allowing for higher voltage and temperature operation, far exceeding the capabilities of traditional semiconductor materials like silicon.

• Exceptional Breakdown Voltage: These substrates enable devices to handle significantly higher voltages, making them perfect for power electronics, especially in high-voltage applications.

• Excellent Thermal Conductivity: With superior thermal stability, these substrates maintain consistent performance even in extreme thermal environments, ideal for high-power and high-temperature applications.

• High-Quality Material: The 2″ Gallium Oxide Substrates offer low defect densities and high crystalline quality, ensuring the reliable and efficient performance of your semiconductor devices.

• Versatile Applications: These substrates are suited for a range of applications, including power transistors, Schottky diodes, and UV-C LED devices, offering a robust foundation for both power and optoelectronic innovations.

Unlock the full potential of your semiconductor devices with Semicera’s 2″ Gallium Oxide Substrates. Our substrates are designed to meet the demanding needs of today’s advanced applications, ensuring high performance, reliability, and efficiency. Choose Semicera for state-of-the-art semiconductor materials that drive innovation.

Articles	Production	Recherche	Factice
Paramètres de cristal
Polytype	4H
Erreur d'orientation de la surface	4±0.15°
Paramètres électriques
Dopant	azote de type N
Résistivité	0,015-0.025ohm · cm
Paramètres mécaniques
Diamètre	150,0 ± 0,2 mm
Épaisseur	350 ± 25 µm
Orientation plate primaire	[1-100]±5°
Longueur plate primaire	47,5 ± 1,5 mm
Plat secondaire	Aucun
TTV	≤5 µm	≤10 µm	≤15 µm
LTV	≤3 μm (5 mm * 5 mm)	≤5 μm (5 mm * 5 mm)	≤10 μm (5 mm * 5 mm)
Arc	-15 μm ~ 15μm	-35 μm ~ 35 μm	-45 μm ~ 45 μm
Chaîne	≤35 µm	≤45 µm	≤55 µm
Rugosité avant (si-face) (AFM)	Ra≤0,2 nm (5 μm * 5 μm)
Structure
Densité de micro-	<1 ea / cm2	<10 ea / cm2	<15 ea / cm2
Impuretés métalliques	≤5E10atoms/cm2		N / A
BPB	≤1500 ea / cm2	≤3000 ea / cm2	N / A
TSD	≤500 ea / cm2	≤1000 ea / cm2	N / A
Qualité avant
Devant	Si
Finition de surface	CMP SI-FACE
Particules	≤60ea / plaquette (taille 0,3 μm)	N / A
Rayures	≤5EA / MM. Longueur cumulative ≤ diamètre	Longueur cumulatif ≤2 * diamètre	N / A
PELLE / PEPES ORANGE / TAPPES / COMMENTS / CRESCHES / CONTAMINATION	Aucun		N / A
Coups de bord / retraits / fracture / plaques hexagonales	Aucun
Zones de polytype	Aucun	Zone cumulative≤20%	Zone cumulative ≤ 30%
Marquage laser avant	Aucun
Qualité du dos
Finition arrière	CMP C-FACE
Rayures	≤5ea / mm, longueur cumulative≤2 * diamètre	N / A
Défauts arrière (puces de bord / retraits)	Aucun
Rugosité du dos	Ra≤0,2 nm (5 μm * 5 μm)
Marquage laser arrière	1 mm (du bord supérieur)
Bord
Bord	Chanfreiner
Conditionnement
Conditionnement	Préparé en épi avec un emballage sous vide Emballage de cassette multi-wafer
*Remarques: «NA» signifie qu'aucun élément de demande non mentionné ne peut se référer au semi-std.