4″ Gallium Oxide Substrates

4″ Gallium Oxide Substrates– Unlock new levels of efficiency and performance in power electronics and UV devices with Semicera’s high-quality 4″ Gallium Oxide Substrates, designed for cutting-edge semiconductor applications.

Seminer proudly introduces its 4″ Gallium Oxide Substrates, a groundbreaking material engineered to meet the growing demands of high-performance semiconductor devices. Gallium Oxide (Ga₂O₃) substrates offer an ultra-wide bandgap, making them ideal for next-generation power electronics, UV optoelectronics, and high-frequency devices.

Caractéristiques clés:

• Ultra-Wide Bandgap: The 4″ Gallium Oxide Substrates boast a bandgap of approximately 4.8 eV, allowing for exceptional voltage and temperature tolerance, significantly outperforming traditional semiconductor materials like silicon.

• High Breakdown Voltage: These substrates enable devices to operate at higher voltages and powers, making them perfect for high-voltage applications in power electronics.

• Superior Thermal Stability: Gallium Oxide substrates offer excellent thermal conductivity, ensuring stable performance under extreme conditions, ideal for use in demanding environments.

• High Material Quality: With low defect densities and high crystal quality, these substrates ensure reliable and consistent performance, enhancing the efficiency and durability of your devices.

• Versatile Application: Suitable for a wide range of applications, including power transistors, Schottky diodes, and UV-C LED devices, enabling innovations in both power and optoelectronic fields.

Explore the future of semiconductor technology with Semicera’s 4″ Gallium Oxide Substrates. Our substrates are designed to support the most advanced applications, providing the reliability and efficiency required for today’s cutting-edge devices. Trust Semicera for quality and innovation in your semiconductor materials.

Articles	Production	Recherche	Factice
Paramètres de cristal
Polytype	4H
Erreur d'orientation de la surface	4±0.15°
Paramètres électriques
Dopant	azote de type N
Résistivité	0,015-0.025ohm · cm
Paramètres mécaniques
Diamètre	150,0 ± 0,2 mm
Épaisseur	350 ± 25 µm
Orientation plate primaire	[1-100]±5°
Longueur plate primaire	47,5 ± 1,5 mm
Plat secondaire	Aucun
TTV	≤5 µm	≤10 µm	≤15 µm
LTV	≤3 μm (5 mm * 5 mm)	≤5 μm (5 mm * 5 mm)	≤10 μm (5 mm * 5 mm)
Arc	-15 μm ~ 15μm	-35 μm ~ 35 μm	-45 μm ~ 45 μm
Chaîne	≤35 µm	≤45 µm	≤55 µm
Rugosité avant (si-face) (AFM)	Ra≤0,2 nm (5 μm * 5 μm)
Structure
Densité de micro-	<1 ea / cm2	<10 ea / cm2	<15 ea / cm2
Impuretés métalliques	≤5E10atoms/cm2		N / A
BPB	≤1500 ea / cm2	≤3000 ea / cm2	N / A
TSD	≤500 ea / cm2	≤1000 ea / cm2	N / A
Qualité avant
Devant	Si
Finition de surface	CMP SI-FACE
Particules	≤60ea / plaquette (taille 0,3 μm)	N / A
Rayures	≤5EA / MM. Longueur cumulative ≤ diamètre	Longueur cumulatif ≤2 * diamètre	N / A
PELLE / PEPES ORANGE / TAPPES / COMMENTS / CRESCHES / CONTAMINATION	Aucun		N / A
Coups de bord / retraits / fracture / plaques hexagonales	Aucun
Zones de polytype	Aucun	Zone cumulative≤20%	Zone cumulative ≤ 30%
Marquage laser avant	Aucun
Qualité du dos
Finition arrière	CMP C-FACE
Rayures	≤5ea / mm, longueur cumulative≤2 * diamètre	N / A
Défauts arrière (puces de bord / retraits)	Aucun
Rugosité du dos	Ra≤0,2 nm (5 μm * 5 μm)
Marquage laser arrière	1 mm (du bord supérieur)
Bord
Bord	Chanfreiner
Conditionnement
Conditionnement	Préparé en épi avec un emballage sous vide Emballage de cassette multi-wafer
*Remarques: «NA» signifie qu'aucun élément de demande non mentionné ne peut se référer au semi-std.