Product introduction and use: Placed 41 pieces of 4 hours substrate, used for growing LED with blue-green epitaxial filmDevice location of the product: in the reaction chamber, in direct contact with the waferMain downstream products: LED chipsMain end market: LED
Our company provides SiC coating process services by CVD method on the surface of graphite, ceramics and other materials, so that special gases containing carbon and silicon react at high temperature to obtain high purity SiC molecules, molecules deposited on the surface of the coated materials, forming a SiC protective layer.
1. Résistance à l'oxydation à haute température:
the oxidation resistance is still very good when the temperature is as high as 1600 ℃.
2.
3. Résistance à l'érosion: dureté élevée, surface compacte, particules fines.
4. Résistance à la corrosion: réactifs acide, alcalin, sel et organique.
| Propriétés SIC-CVD | ||
| Structure cristalline | FCC β phase | |
| Densité | g/cm ³ | 3.21 |
| Dureté | Vickers dureté | 2500 |
| Taille des grains | μm | 2~10 |
| Pureté chimique | % | 99.99995 |
| Capacité thermique | J·kg-1 ·K-1 | 640 |
| Température de sublimation | ℃ | 2700 |
| Résistance aux félexes | MPa (RT 4-point) | 415 |
| Young’ s Modulus | Gpa (4pt bend, 1300℃) | 430 |
| Expansion thermique (CTE) | 10-6K-1 | 4.5 |
| Conductivité thermique | (W / mk) | 300 |
