Semicera’s 8 Inch N-type SiC Wafers are engineered for cutting-edge applications in high-power and high-frequency electronics. These wafers provide superior electrical and thermal properties, ensuring efficient performance in demanding environments. Semicera delivers innovation and reliability in semiconductor materials.
Semicera’s 8 Inch N-type SiC Wafers are at the forefront of semiconductor innovation, providing a solid base for the development of high-performance electronic devices. These wafers are designed to meet the rigorous demands of modern electronic applications, from power electronics to high-frequency circuits.
The N-type doping in these SiC wafers enhances their electrical conductivity, making them ideal for a wide range of applications, including power diodes, transistors, and amplifiers. The superior conductivity ensures minimal energy loss and efficient operation, which are critical for devices operating at high frequencies and power levels.
Semicera employs advanced manufacturing techniques to produce SiC wafers with exceptional surface uniformity and minimal defects. This level of precision is essential for applications that require consistent performance and durability, such as in aerospace, automotive, and telecommunications industries.
Incorporating Semicera’s 8 Inch N-type SiC Wafers into your production line provides a foundation for creating components that can withstand harsh environments and high temperatures. These wafers are perfect for applications in power conversion, RF technology, and other demanding fields.
Choosing Semicera’s 8 Inch N-type SiC Wafers means investing in a product that combines high-quality material science with precise engineering. Semicera is committed to advancing the capabilities of semiconductor technologies, offering solutions that enhance the efficiency and reliability of your electronic devices.
|
Articles |
Production |
Recherche |
Factice |
|
Paramètres de cristal |
|||
|
Polytype |
4H |
||
|
Erreur d'orientation de la surface |
4±0.15° |
||
|
Paramètres électriques |
|||
|
Dopant |
azote de type N |
||
|
Résistivité |
0,015-0.025ohm · cm |
||
|
Paramètres mécaniques |
|||
|
Diamètre |
150,0 ± 0,2 mm |
||
|
Épaisseur |
350 ± 25 µm |
||
|
Orientation plate primaire |
[1-100]±5° |
||
|
Longueur plate primaire |
47,5 ± 1,5 mm |
||
|
Plat secondaire |
Aucun |
||
|
TTV |
≤5 µm |
≤10 µm |
≤15 µm |
|
LTV |
≤3 μm (5 mm * 5 mm) |
≤5 μm (5 mm * 5 mm) |
≤10 μm (5 mm * 5 mm) |
|
Arc |
-15 μm ~ 15μm |
-35 μm ~ 35 μm |
-45 μm ~ 45 μm |
|
Chaîne |
≤35 µm |
≤45 µm |
≤55 µm |
|
Rugosité avant (si-face) (AFM) |
Ra≤0,2 nm (5 μm * 5 μm) |
||
|
Structure |
|||
|
Densité de micro- |
<1 ea / cm2 |
<10 ea / cm2 |
<15 ea / cm2 |
|
Impuretés métalliques |
≤5E10atoms/cm2 |
N / A |
|
|
BPB |
≤1500 ea / cm2 |
≤3000 ea / cm2 |
N / A |
|
TSD |
≤500 ea / cm2 |
≤1000 ea / cm2 |
N / A |
|
Qualité avant |
|||
|
Devant |
Si |
||
|
Finition de surface |
CMP SI-FACE |
||
|
Particules |
≤60ea / plaquette (taille 0,3 μm) |
N / A |
|
|
Rayures |
≤5EA / MM. Longueur cumulative ≤ diamètre |
Longueur cumulatif ≤2 * diamètre |
N / A |
|
PELLE / PEPES ORANGE / TAPPES / COMMENTS / CRESCHES / CONTAMINATION |
Aucun |
N / A |
|
|
Coups de bord / retraits / fracture / plaques hexagonales |
Aucun |
||
|
Zones de polytype |
Aucun |
Zone cumulative≤20% |
Zone cumulative ≤ 30% |
|
Marquage laser avant |
Aucun |
||
|
Qualité du dos |
|||
|
Finition arrière |
CMP C-FACE |
||
|
Rayures |
≤5ea / mm, longueur cumulative≤2 * diamètre |
N / A |
|
|
Défauts arrière (puces de bord / retraits) |
Aucun |
||
|
Rugosité du dos |
Ra≤0,2 nm (5 μm * 5 μm) |
||
|
Marquage laser arrière |
1 mm (du bord supérieur) |
||
|
Bord |
|||
|
Bord |
Chanfreiner |
||
|
Conditionnement |
|||
|
Conditionnement |
Préparé en épi avec un emballage sous vide Emballage de cassette multi-wafer |
||
|
*Remarques: «NA» signifie qu'aucun élément de demande non mentionné ne peut se référer au semi-std. |
|||
