Semicera Energy Technology Co., Ltd. is a leading supplier specializing in wafer and advanced semiconductor consumables.We are dedicated to providing high-quality, reliable, and innovative products to semiconductor manufacturing,photovoltaic industryand other related fields.Our product line includes SiC/TaC coated graphite products and ceramic products, encompassing various materials such as silicon carbide, silicon nitride, and aluminum oxide and etc.As a trusted supplier, we understand the importance of consumables in the manufacturing process, and we are committed to delivering products that meet the highest quality standards to fulfill our customers’ needs.
Product Description
Our company provides SiC coating process services by CVD method on the surface of graphite, ceramics and other materials, so that special gases containing carbon and silicon react at high temperature to obtain high purity SiC molecules, molecules deposited on the surface of the coated materials, forming SIC protective layer.
Caractéristiques principales:
1. Résistance à l'oxydation à haute température:
La résistance à l'oxydation est encore très bonne lorsque la température est aussi élevée que 1600 C.
2. High purity : made by chemical vapor deposition under high temperature chlorination condition.
3. Résistance à l'érosion: dureté élevée, surface compacte, particules fines.
4. Résistance à la corrosion: réactifs acide, alcalin, sel et organique.
Spécifications principales du revêtement CVD-SIC
|
Propriétés SIC-CVD |
||
|
Structure cristalline |
Phase FCC β |
|
|
Densité |
g / cm ³ |
3.21 |
|
Dureté |
Vickers dureté |
2500 |
|
Taille des grains |
MM |
2~10 |
|
Pureté chimique |
% |
99.99995 |
|
Capacité thermique |
J · kg-1 · k-1 |
640 |
|
Température de sublimation |
℃ |
2700 |
|
Résistance aux félexes |
MPA (RT 4 points) |
415 |
|
Module de jeunes |
GPA (4pt Bend, 1300 ℃) |
430 |
|
Expansion thermique (CTE) |
10-6K-1 |
4.5 |
|
Conductivité thermique |
(W / mk) |
300 |