Si Substrate

With its superior precision and high purity, Semicera’s Si Substrate ensures reliable and consistent performance in critical applications, including Epi-Wafer and Gallium Oxide (Ga2O3) manufacturing. Designed to support the production of advanced microelectronics, this substrate offers exceptional compatibility and stability, making it an essential material for cutting-edge technologies in telecommunications, automotive, and industrial sectors.

The Si Substrate by Semicera is an essential component in the production of high-performance semiconductor devices. Engineered from high-purity Silicon (Si), this substrate offers exceptional uniformity, stability, and excellent conductivity, making it ideal for a wide range of advanced applications in the semiconductor industry. Whether used in Si Wafer, SiC Substrate, SOI Wafer, or SiN Substrate production, the Semicera Si Substrate delivers consistent quality and superior performance to meet the growing demands of modern electronics and materials science.

Unmatched Performance with High Purity and Precision

Semicera’s Si Substrate is manufactured using advanced processes that ensure high purity and tight dimensional control. The substrate serves as the foundation for the production of a variety of high-performance materials, including Epi-Wafers and AlN Wafers. The precision and uniformity of the Si Substrate make it an excellent choice for creating thin-film epitaxial layers and other critical components used in the production of next-generation semiconductors. Whether you’re working with Gallium Oxide (Ga2O3) or other advanced materials, Semicera’s Si Substrate ensures the highest levels of reliability and performance.

Applications in Semiconductor Manufacturing

In the semiconductor industry, the Si Substrate from Semicera is utilized in a broad array of applications, including Si Wafer and SiC Substrate production, where it provides a stable, reliable base for the deposition of active layers. The substrate plays a critical role in fabricating SOI Wafers (Silicon On Insulator), which are essential for advanced microelectronics and integrated circuits. Furthermore, Epi-Wafers (epitaxial wafers) built on Si Substrates are integral in producing high-performance semiconductor devices such as power transistors, diodes, and integrated circuits.

The Si Substrate also supports the manufacturing of devices using Gallium Oxide (Ga2O3), a promising wide-bandgap material used for high-power applications in power electronics. Additionally, the compatibility of Semicera’s Si Substrate with AlN Wafers and other advanced substrates ensures that it can meet the diverse requirements of high-tech industries, making it an ideal solution for the production of cutting-edge devices in telecommunications, automotive, and industrial sectors.

Reliable and Consistent Quality for High-Tech Applications

The Si Substrate by Semicera is carefully engineered to meet the rigorous demands of semiconductor fabrication. Its exceptional structural integrity and high-quality surface properties make it the ideal material for use in cassette systems for wafer transport, as well as for creating high-precision layers in semiconductor devices. The substrate’s ability to maintain consistent quality under varying process conditions ensures minimal defects, enhancing the yield and performance of the final product.

With its superior thermal conductivity, mechanical strength, and high purity, Semicera’s Si Substrate is the material of choice for manufacturers looking to achieve the highest standards of precision, reliability, and performance in semiconductor production.

Choose Semicera’s Si Substrate for High-Purity, High-Performance Solutions

For manufacturers in the semiconductor industry, the Si Substrate from Semicera offers a robust, high-quality solution for a wide range of applications, from Si Wafer production to the creation of Epi-Wafers and SOI Wafers. With unmatched purity, precision, and reliability, this substrate enables the production of cutting-edge semiconductor devices, ensuring long-term performance and optimal efficiency. Choose Semicera for your Si substrate needs, and trust in a product designed to meet the demands of tomorrow’s technologies.

Articles

Production

Recherche

Factice

Paramètres de cristal

Polytype

4H

Erreur d'orientation de la surface

4±0.15°

Paramètres électriques

Dopant

azote de type N

Résistivité

0,015-0.025ohm · cm

Paramètres mécaniques

Diamètre

150,0 ± 0,2 mm

Épaisseur

350 ± 25 µm

Orientation plate primaire

[1-100]±5°

Longueur plate primaire

47,5 ± 1,5 mm

Plat secondaire

Aucun

TTV

≤5 µm

≤10 µm

≤15 µm

LTV

≤3 μm (5 mm * 5 mm)

≤5 μm (5 mm * 5 mm)

≤10 μm (5 mm * 5 mm)

Arc

-15 μm ~ 15μm

-35 μm ~ 35 μm

-45 μm ~ 45 μm

Chaîne

≤35 µm

≤45 µm

≤55 µm

Rugosité avant (si-face) (AFM)

Ra≤0,2 nm (5 μm * 5 μm)

Structure

Densité de micro-

<1 ea / cm2

<10 ea / cm2

<15 ea / cm2

Impuretés métalliques

≤5E10atoms/cm2

N / A

BPB

≤1500 ea / cm2

≤3000 ea / cm2

N / A

TSD

≤500 ea / cm2

≤1000 ea / cm2

N / A

Qualité avant

Devant

Si

Finition de surface

CMP SI-FACE

Particules

≤60ea / plaquette (taille 0,3 μm)

N / A

Rayures

≤5EA / MM. Longueur cumulative ≤ diamètre

Longueur cumulatif ≤2 * diamètre

N / A

PELLE / PEPES ORANGE / TAPPES / COMMENTS / CRESCHES / CONTAMINATION

Aucun

N / A

Coups de bord / retraits / fracture / plaques hexagonales

Aucun

Zones de polytype

Aucun

Zone cumulative≤20%

Zone cumulative ≤ 30%

Marquage laser avant

Aucun

Qualité du dos

Finition arrière

CMP C-FACE

Rayures

≤5ea / mm, longueur cumulative≤2 * diamètre

N / A

Défauts arrière (puces de bord / retraits)

Aucun

Rugosité du dos

Ra≤0,2 nm (5 μm * 5 μm)

Marquage laser arrière

1 mm (du bord supérieur)

Bord

Bord

Chanfreiner

Conditionnement

Conditionnement

Préparé en épi avec un emballage sous vide

Emballage de cassette multi-wafer

*Remarques: «NA» signifie qu'aucun élément de demande non mentionné ne peut se référer au semi-std.

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