Semicera Silicon Carbide Cantilever Wafer Paddle offers exceptional strength and thermal stability, making it ideal for high-temperature wafer handling. With its precision-engineered design, this Wafer Paddle ensures reliable performance. Semicera provides 30-day delivery, meeting your production needs swiftly and efficiently.Contact us for inquiries!
The Semicera SiC Cantilever Wafer Paddle is designed to meet the demands of modern semiconductor manufacturing. This wafer paddle offers excellent mechanical strength and thermal resistance, which is critical for handling wafers in high-temperature environments.
The SiC cantilever design enables precise wafer placement, reducing the risk of damage during handling. Its high thermal conductivity ensures that the wafer remains stable even under extreme conditions, which is critical for maintaining production efficiency.
In addition to its structural advantages, Semicera’s SiC Cantilever Wafer Paddle also offers advantages in weight and durability. The lightweight construction makes it easier to handle and integrate into existing systems, while the high-density SiC material ensures long-lasting durability under demanding conditions.
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Propriétés physiques du carbure de silicium recristallisé |
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Propriété |
Valeur typique |
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Working temperature (°C) |
1600°C (with oxygen), 1700°C (reducing environment) |
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Contenu SIC |
> 99.96% |
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Contenu SI gratuit |
<0,1% |
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Densité en vrac |
2.60-2.70 g/cm3 |
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Porosité apparente |
<16% |
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Compression strength |
> 600 MPa |
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Résistance à la flexion froide |
80-90 MPa (20°C) |
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Résistance à la flexion chaude |
90-100 MPa (1400°C) |
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Thermal expansion @1500°C |
4.70 10-6/°C |
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Thermal conductivity @1200°C |
23 W/m•K |
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Module élastique |
240 GPA |
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Résistance aux chocs thermiques |
Extrêmement bon |
