Silicon Carbide Coated Crystal Growth Susceptor

Semicera offers a comprehensive range of susceptors and graphite components designed for various epitaxy reactors.Through strategic partnerships with industry-leading OEMs, extensive materials expertise, and advanced manufacturing capabilities, Semicera delivers tailored designs to meet the specific requirements of your application. Our commitment to excellence ensures that you receive optimal solutions for your epitaxy reactor needs.

Notre entreprise fournit Revêtement sic process services on the surface of graphite, ceramics and other materials by CVD method, so that special gases containing carbon and silicon can react at high temperature to obtain high-purity Sic molecules, which can be deposited on the surface of coated materials to form a SiC protective layer for epitaxy barrel type hy pnotic.

 

Main features:

1 .High purity SiC coated graphite

2. Superior heat resistance & thermal uniformity

3. Fine SiC crystal coated for a smooth surface

4. High durability against chemical cleaning

 

Barrel Susceptor (6)

Main Specifications of CVD-SIC Coating

Propriétés SIC-CVD

Structure cristalline Phase FCC β
Densité g / cm ³ 3.21
Dureté Vickers dureté 2500
Taille des grains MM 2~10
Pureté chimique % 99.99995
Capacité thermique J · kg-1 · k-1 640
Température de sublimation 2700
Résistance aux félexes MPA (RT 4 points) 415
Module de jeunes GPA (4pt Bend, 1300 ℃) 430
Expansion thermique (CTE) 10-6K-1 4.5
Conductivité thermique (W / mk) 300

 

 

2--cvd-sic-purity---99-99995-_60366

5----sic-crystal_242127

Lieu de travail Semiera

Semirara Lieu de travail 2

Machine de matériel

Traitement CNN, nettoyage chimique, revêtement CVD

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