Silicon carbide heater is coated with metal oxide, that is, far infrared paint silicon carbide plate as a radiation element, in the element hole (or groove) into the electric heating wire, in the bottom of the silicon carbide plate put thicker insulation, refractory, heat insulation material, and then installed on the metal shell, the terminal can be used to connect the power supply.When the far infrared ray of the silicon carbide heater radiates to the object, it can absorb, reflect and pass through. The heated and dried material absorbs far-infrared radiation energy at a certain depth of internal and surface molecules at the same time, producing a self-heating effect, so that the solvent or water molecules evaporate and heat evenly, thus avoiding deformation and qualitative change due to different degrees of thermal expansion, so that the appearance of the material, physical and mechanical properties, fastness and color remain intact.
Our company provides SiC coating process services by CVD method on the surface of graphite, ceramics and other materials, so that special gases containing carbon and silicon react at high temperature to obtain high purity SiC molecules, molecules deposited on the surface of the coated materials, forming SIC protective layer.
1. Résistance à l'oxydation à haute température:
La résistance à l'oxydation est encore très bonne lorsque la température est aussi élevée que 1600 C.
2.
3. Résistance à l'érosion: dureté élevée, surface compacte, particules fines.
4. Résistance à la corrosion: réactifs acide, alcalin, sel et organique.
Propriétés SIC-CVD |
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Structure cristalline | Phase FCC β | |
Densité | g / cm ³ | 3.21 |
Dureté | Vickers dureté | 2500 |
Taille des grains | MM | 2~10 |
Pureté chimique | % | 99.99995 |
Capacité thermique | J · kg-1 · k-1 | 640 |
Température de sublimation | ℃ | 2700 |
Résistance aux félexes | MPA (RT 4 points) | 415 |
Module de jeunes | GPA (4pt Bend, 1300 ℃) | 430 |
Expansion thermique (CTE) | 10-6K-1 | 4.5 |
Conductivité thermique | (W / mk) | 300 |