Semicera’s Silicon-on-Insulator wafers provide high-performance solutions for advanced semiconductor applications. Ideally suited for MEMS, sensors, and microelectronics, these wafers provide excellent electrical isolation and low parasitic capacitance. Semicera ensures precision manufacturing, delivering consistent quality for a range of innovative technologies. We look forward to being your long-term partner in China.
Silicon on Insulator Wafers from Semicera are designed to meet the growing demand for high-performance semiconductor solutions. Our SOI wafers offer superior electrical performance and reduced parasitic device capacitance, making them ideal for advanced applications such as MEMS devices, sensors, and integrated circuits. Semicera’s expertise in wafer production ensures that each SOI wafer provides reliable, high-quality results for your next-generation technology needs.
Our Silicon on Insulator Wafers offer an optimal balance between cost-effectiveness and performance. With soi wafer cost becoming increasingly competitive, these wafers are widely used in a range of industries, including microelectronics and optoelectronics. Semicera’s high-precision production process guarantees superior wafer bonding and uniformity, making them suitable for a variety of applications, from cavity SOI wafers to standard silicon wafers.
Caractéristiques clés:
• High-quality SOI wafers optimized for performance in MEMS and other applications.
• Competitive soi wafer cost for businesses seeking advanced solutions without compromising quality.
• Ideal for cutting-edge technologies, offering enhanced electrical isolation and efficiency in silicon on insulator systems.
Our Silicon on Insulator Wafers are engineered to provide high-performance solutions, supporting the next wave of innovation in semiconductor technology. Whether you’re working on cavity SOI wafers, MEMS devices, or silicon on insulator components, Semicera delivers wafers that meet the highest standards in the industry.
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Articles |
Production |
Recherche |
Factice |
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Paramètres de cristal |
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Polytype |
4H |
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Erreur d'orientation de la surface |
4±0.15° |
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Paramètres électriques |
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Dopant |
azote de type N |
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Résistivité |
0,015-0.025ohm · cm |
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Paramètres mécaniques |
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Diamètre |
150,0 ± 0,2 mm |
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Épaisseur |
350 ± 25 µm |
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Orientation plate primaire |
[1-100]±5° |
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Longueur plate primaire |
47,5 ± 1,5 mm |
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Plat secondaire |
Aucun |
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TTV |
≤5 µm |
≤10 µm |
≤15 µm |
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LTV |
≤3 μm (5 mm * 5 mm) |
≤5 μm (5 mm * 5 mm) |
≤10 μm (5 mm * 5 mm) |
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Arc |
-15 μm ~ 15μm |
-35 μm ~ 35 μm |
-45 μm ~ 45 μm |
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Chaîne |
≤35 µm |
≤45 µm |
≤55 µm |
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Rugosité avant (si-face) (AFM) |
Ra≤0,2 nm (5 μm * 5 μm) |
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Structure |
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Densité de micro- |
<1 ea / cm2 |
<10 ea / cm2 |
<15 ea / cm2 |
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Impuretés métalliques |
≤5E10atoms/cm2 |
N / A |
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BPB |
≤1500 ea / cm2 |
≤3000 ea / cm2 |
N / A |
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TSD |
≤500 ea / cm2 |
≤1000 ea / cm2 |
N / A |
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Qualité avant |
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Devant |
Si |
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Finition de surface |
CMP SI-FACE |
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Particules |
≤60ea / plaquette (taille 0,3 μm) |
N / A |
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Rayures |
≤5EA / MM. Longueur cumulative ≤ diamètre |
Longueur cumulatif ≤2 * diamètre |
N / A |
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PELLE / PEPES ORANGE / TAPPES / COMMENTS / CRESCHES / CONTAMINATION |
Aucun |
N / A |
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Coups de bord / retraits / fracture / plaques hexagonales |
Aucun |
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Zones de polytype |
Aucun |
Zone cumulative≤20% |
Zone cumulative ≤ 30% |
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Marquage laser avant |
Aucun |
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Qualité du dos |
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Finition arrière |
CMP C-FACE |
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Rayures |
≤5ea / mm, longueur cumulative≤2 * diamètre |
N / A |
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Défauts arrière (puces de bord / retraits) |
Aucun |
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Rugosité du dos |
Ra≤0,2 nm (5 μm * 5 μm) |
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Marquage laser arrière |
1 mm (du bord supérieur) |
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Bord |
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Bord |
Chanfreiner |
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Conditionnement |
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Conditionnement |
Préparé en épi avec un emballage sous vide Emballage de cassette multi-wafer |
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*Remarques: «NA» signifie qu'aucun élément de demande non mentionné ne peut se référer au semi-std. |
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