{"id":1312,"date":"2025-09-11T05:28:18","date_gmt":"2025-09-11T05:28:18","guid":{"rendered":"https:\/\/weitai2.globaldeepsea.site\/product\/si-substrate\/"},"modified":"2025-09-11T05:28:23","modified_gmt":"2025-09-11T05:28:23","slug":"si-substrate","status":"publish","type":"product","link":"https:\/\/www.cn-semiconductorparts.com\/fr\/product\/si-substrate\/","title":{"rendered":"Substrat SI"},"content":{"rendered":"
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The Si Substrate by Semicera is an essential component in the production of high-performance semiconductor devices. Engineered from high-purity Silicon (Si), this substrate offers exceptional uniformity, stability, and excellent conductivity, making it ideal for a wide range of advanced applications in the semiconductor industry. Whether used in Si Wafer, SiC Substrate, SOI Wafer, or SiN Substrate production, the Semicera Si Substrate delivers consistent quality and superior performance to meet the growing demands of modern electronics and materials science.<\/span><\/p>\n

Unmatched Performance with High Purity and Precision<\/span><\/strong><\/p>\n

Semicera\u2019s Si Substrate is manufactured using advanced processes that ensure high purity and tight dimensional control. The substrate serves as the foundation for the production of a variety of high-performance materials, including Epi-Wafers and AlN Wafers. The precision and uniformity of the Si Substrate make it an excellent choice for creating thin-film epitaxial layers and other critical components used in the production of next-generation semiconductors. Whether you\u2019re working with Gallium Oxide (Ga2O3) or other advanced materials, Semicera\u2019s Si Substrate ensures the highest levels of reliability and performance.<\/span><\/p>\n

Applications in Semiconductor Manufacturing<\/span><\/strong><\/p>\n

In the semiconductor industry, the Si Substrate from Semicera is utilized in a broad array of applications, including Si Wafer and SiC Substrate production, where it provides a stable, reliable base for the deposition of active layers. The substrate plays a critical role in fabricating SOI Wafers (Silicon On Insulator), which are essential for advanced microelectronics and integrated circuits. Furthermore, Epi-Wafers (epitaxial wafers) built on Si Substrates are integral in producing high-performance semiconductor devices such as power transistors, diodes, and integrated circuits.<\/span><\/p>\n

The Si Substrate also supports the manufacturing of devices using Gallium Oxide (Ga2O3), a promising wide-bandgap material used for high-power applications in power electronics. Additionally, the compatibility of Semicera\u2019s Si Substrate with AlN Wafers and other advanced substrates ensures that it can meet the diverse requirements of high-tech industries, making it an ideal solution for the production of cutting-edge devices in telecommunications, automotive, and industrial sectors.<\/span><\/p>\n

Reliable and Consistent Quality for High-Tech Applications<\/span><\/strong><\/p>\n

The Si Substrate by Semicera is carefully engineered to meet the rigorous demands of semiconductor fabrication. Its exceptional structural integrity and high-quality surface properties make it the ideal material for use in cassette systems for wafer transport, as well as for creating high-precision layers in semiconductor devices. The substrate\u2019s ability to maintain consistent quality under varying process conditions ensures minimal defects, enhancing the yield and performance of the final product.<\/span><\/p>\n

With its superior thermal conductivity, mechanical strength, and high purity, Semicera\u2019s Si Substrate is the material of choice for manufacturers looking to achieve the highest standards of precision, reliability, and performance in semiconductor production.<\/span><\/p>\n

Choose Semicera\u2019s Si Substrate for High-Purity, High-Performance Solutions<\/span><\/p>\n

For manufacturers in the semiconductor industry, the Si Substrate from Semicera offers a robust, high-quality solution for a wide range of applications, from Si Wafer production to the creation of Epi-Wafers and SOI Wafers. With unmatched purity, precision, and reliability, this substrate enables the production of cutting-edge semiconductor devices, ensuring long-term performance and optimal efficiency. Choose Semicera for your Si substrate needs, and trust in a product designed to meet the demands of tomorrow\u2019s technologies.<\/span><\/p>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

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Articles<\/p>\n<\/td>\n

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Production<\/p>\n<\/td>\n

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Recherche<\/p>\n<\/td>\n

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Factice<\/p>\n<\/td>\n<\/tr>\n

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Param\u00e8tres de cristal<\/p>\n<\/td>\n<\/tr>\n

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Polytype<\/p>\n<\/td>\n

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4H<\/p>\n<\/td>\n<\/tr>\n

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Erreur d'orientation de la surface<\/p>\n<\/td>\n

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4\u00b10.15\u00b0<\/p>\n<\/td>\n<\/tr>\n

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Param\u00e8tres \u00e9lectriques<\/p>\n<\/td>\n<\/tr>\n

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Dopant<\/p>\n<\/td>\n

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azote de type N<\/p>\n<\/td>\n<\/tr>\n

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R\u00e9sistivit\u00e9<\/p>\n<\/td>\n

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0,015-0.025ohm \u00b7 cm<\/p>\n<\/td>\n<\/tr>\n

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Param\u00e8tres m\u00e9caniques<\/p>\n<\/td>\n<\/tr>\n

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Diam\u00e8tre<\/p>\n<\/td>\n

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150,0 \u00b1 0,2 mm<\/p>\n<\/td>\n<\/tr>\n

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\u00c9paisseur<\/p>\n<\/td>\n

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350 \u00b1 25 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

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Orientation plate primaire<\/p>\n<\/td>\n

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[1-100]\u00b15\u00b0<\/p>\n<\/td>\n<\/tr>\n

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Longueur plate primaire<\/p>\n<\/td>\n

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47,5 \u00b1 1,5 mm<\/p>\n<\/td>\n<\/tr>\n

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Plat secondaire<\/p>\n<\/td>\n

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Aucun<\/p>\n<\/td>\n<\/tr>\n

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TTV<\/p>\n<\/td>\n

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\u22645 \u00b5m<\/p>\n<\/td>\n

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\u226410 \u00b5m<\/p>\n<\/td>\n

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\u226415 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

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LTV<\/p>\n<\/td>\n

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\u22643 \u03bcm (5 mm * 5 mm)<\/p>\n<\/td>\n

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\u22645 \u03bcm (5 mm * 5 mm)<\/p>\n<\/td>\n

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\u226410 \u03bcm (5 mm * 5 mm)<\/p>\n<\/td>\n<\/tr>\n

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Arc<\/p>\n<\/td>\n

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-15 \u03bcm ~ 15\u03bcm<\/p>\n<\/td>\n

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-35 \u03bcm ~ 35 \u03bcm<\/p>\n<\/td>\n

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-45 \u03bcm ~ 45 \u03bcm<\/p>\n<\/td>\n<\/tr>\n

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Cha\u00eene<\/p>\n<\/td>\n

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\u226435 \u00b5m<\/p>\n<\/td>\n

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\u226445 \u00b5m<\/p>\n<\/td>\n

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\u226455 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

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Rugosit\u00e9 avant (si-face) (AFM)<\/p>\n<\/td>\n

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Ra\u22640,2 nm (5 \u03bcm * 5 \u03bcm)<\/p>\n<\/td>\n<\/tr>\n

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Structure<\/p>\n<\/td>\n<\/tr>\n

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Densit\u00e9 de micro-<\/p>\n<\/td>\n

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<1 ea \/ cm2<\/p>\n<\/td>\n

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<10 ea \/ cm2<\/p>\n<\/td>\n

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<15 ea \/ cm2<\/p>\n<\/td>\n<\/tr>\n

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Impuret\u00e9s m\u00e9talliques<\/p>\n<\/td>\n

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\u22645E10atoms\/cm2<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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BPB<\/p>\n<\/td>\n

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\u22641500 ea \/ cm2<\/p>\n<\/td>\n

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\u22643000 ea \/ cm2<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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TSD<\/p>\n<\/td>\n

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\u2264500 ea \/ cm2<\/p>\n<\/td>\n

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\u22641000 ea \/ cm2<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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Qualit\u00e9 avant<\/p>\n<\/td>\n<\/tr>\n

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Devant<\/p>\n<\/td>\n

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Si<\/p>\n<\/td>\n<\/tr>\n

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Finition de surface<\/p>\n<\/td>\n

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CMP SI-FACE<\/p>\n<\/td>\n<\/tr>\n

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Particules<\/p>\n<\/td>\n

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\u226460ea \/ plaquette (taille 0,3 \u03bcm)<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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Rayures<\/p>\n<\/td>\n

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\u22645EA \/ MM. Longueur cumulative \u2264 diam\u00e8tre<\/p>\n<\/td>\n

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Longueur cumulatif \u22642 * diam\u00e8tre<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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PELLE \/ PEPES ORANGE \/ TAPPES \/ COMMENTS \/ CRESCHES \/ CONTAMINATION<\/p>\n<\/td>\n

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Aucun<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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Coups de bord \/ retraits \/ fracture \/ plaques hexagonales<\/p>\n<\/td>\n

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Aucun<\/p>\n<\/td>\n<\/tr>\n

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Zones de polytype<\/p>\n<\/td>\n

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Aucun<\/p>\n<\/td>\n

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Zone cumulative\u226420%<\/p>\n<\/td>\n

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Zone cumulative \u2264 30%<\/p>\n<\/td>\n<\/tr>\n

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Marquage laser avant<\/p>\n<\/td>\n

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Aucun<\/p>\n<\/td>\n<\/tr>\n

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Qualit\u00e9 du dos<\/p>\n<\/td>\n<\/tr>\n

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Finition arri\u00e8re<\/p>\n<\/td>\n

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CMP C-FACE<\/p>\n<\/td>\n<\/tr>\n

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Rayures<\/p>\n<\/td>\n

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\u22645ea \/ mm, longueur cumulative\u22642 * diam\u00e8tre<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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D\u00e9fauts arri\u00e8re (puces de bord \/ retraits)<\/p>\n<\/td>\n

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Aucun<\/p>\n<\/td>\n<\/tr>\n

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Rugosit\u00e9 du dos<\/p>\n<\/td>\n

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Ra\u22640,2 nm (5 \u03bcm * 5 \u03bcm)<\/p>\n<\/td>\n<\/tr>\n

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Marquage laser arri\u00e8re<\/p>\n<\/td>\n

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1 mm (du bord sup\u00e9rieur)<\/p>\n<\/td>\n<\/tr>\n

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Bord<\/p>\n<\/td>\n<\/tr>\n

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Bord<\/p>\n<\/td>\n

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Chanfreiner<\/p>\n<\/td>\n<\/tr>\n

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Conditionnement<\/p>\n<\/td>\n<\/tr>\n

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Conditionnement<\/p>\n<\/td>\n

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Pr\u00e9par\u00e9 en \u00e9pi avec un emballage sous vide<\/p>\n

Emballage de cassette multi-wafer<\/p>\n<\/td>\n<\/tr>\n

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*Remarques: \u00abNA\u00bb signifie qu'aucun \u00e9l\u00e9ment de demande non mentionn\u00e9 ne peut se r\u00e9f\u00e9rer au semi-std.<\/p>\n<\/td>\n<\/tr>\n<\/tbody>\n<\/table><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

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\"tech_1_2_size\" <\/img><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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\"Wafers <\/img><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/div>","protected":false},"excerpt":{"rendered":"

With its superior precision and high purity, Semicera\u2019s Si Substrate ensures reliable and consistent performance in critical applications, including Epi-Wafer and Gallium Oxide (Ga2O3) manufacturing. Designed to support the production of advanced microelectronics, this substrate offers exceptional compatibility and stability, making it an essential material for cutting-edge technologies in telecommunications, automotive, and industrial sectors.<\/p>","protected":false},"featured_media":1141,"comment_status":"closed","ping_status":"open","template":"","meta":[],"product_brand":[],"product_cat":[28,24],"product_tag":[],"class_list":{"0":"post-1312","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-plastic-silicon-carbide-ceramics","7":"product_cat-silicon-carbide-ceramic","9":"first","10":"instock","11":"product-type-simple"},"_links":{"self":[{"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/product\/1312","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/types\/product"}],"replies":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/comments?post=1312"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/media\/1141"}],"wp:attachment":[{"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/media?parent=1312"}],"wp:term":[{"taxonomy":"product_brand","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/product_brand?post=1312"},{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/product_cat?post=1312"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/product_tag?post=1312"}],"curies":[{"name":"WP","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}