{"id":1398,"date":"2025-09-11T05:28:53","date_gmt":"2025-09-11T05:28:53","guid":{"rendered":"https:\/\/weitai2.globaldeepsea.site\/product\/850v-high-power-gan-on-si-epi-wafer\/"},"modified":"2026-04-29T15:33:45","modified_gmt":"2026-04-29T07:33:45","slug":"850v-high-power-gan-on-si-epi-wafer","status":"publish","type":"product","link":"https:\/\/www.cn-semiconductorparts.com\/fr\/product\/850v-high-power-gan-on-si-epi-wafer\/","title":{"rendered":"850V High Power GaN-on-Si Epi Wafer"},"content":{"rendered":"
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Seminer<\/em> introduces the 850V High Power GaN-on-Si Epi Wafer<\/strong>, a breakthrough in semiconductor innovation. This advanced epi wafer combines the high efficiency of Gallium Nitride (GaN) with the cost-effectiveness of Silicon (Si), creating a powerful solution for high-voltage applications.<\/span><\/p>\n

Caract\u00e9ristiques cl\u00e9s:<\/span><\/strong><\/p>\n

\u00a0 \u00a0 \u00a0\u2022\u00a0<\/span>High Voltage Handling<\/strong>: Engineered to support up to 850V, this GaN-on-Si Epi Wafer is ideal for demanding power electronics, enabling higher efficiency and performance.<\/span><\/p>\n

\u00a0 \u00a0 \u00a0\u2022\u00a0<\/span>Enhanced Power Density<\/strong>: With superior electron mobility and thermal conductivity, GaN technology allows for compact designs and increased power density.<\/span><\/p>\n

\u00a0 \u00a0 \u00a0\u2022\u00a0<\/span>Cost-Effective Solution<\/strong>: By leveraging silicon as the substrate, this epi wafer offers a cost-effective alternative to traditional GaN wafers, without compromising on quality or performance.<\/span><\/p>\n

\u00a0 \u00a0 \u00a0\u2022\u00a0<\/span>Wide Application Range<\/strong>: Perfect for use in power converters, RF amplifiers, and other high-power electronic devices, ensuring reliability and durability.<\/span><\/p>\n

Explore the future of high-voltage technology with Semicera\u2019s 850V High Power GaN-on-Si Epi Wafer<\/strong>. Designed for cutting-edge applications, this product ensures your electronic devices operate with maximum efficiency and reliability. Choose Semicera for your next-generation semiconductor needs.<\/span><\/p>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

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Articles<\/p>\n<\/td>\n

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Production<\/p>\n<\/td>\n

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Recherche<\/p>\n<\/td>\n

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Factice<\/p>\n<\/td>\n<\/tr>\n

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Param\u00e8tres de cristal<\/p>\n<\/td>\n<\/tr>\n

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Polytype<\/p>\n<\/td>\n

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4H<\/p>\n<\/td>\n<\/tr>\n

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Erreur d'orientation de la surface<\/p>\n<\/td>\n

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4\u00b10.15\u00b0<\/p>\n<\/td>\n<\/tr>\n

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Param\u00e8tres \u00e9lectriques<\/p>\n<\/td>\n<\/tr>\n

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Dopant<\/p>\n<\/td>\n

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azote de type N<\/p>\n<\/td>\n<\/tr>\n

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R\u00e9sistivit\u00e9<\/p>\n<\/td>\n

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0,015-0.025ohm \u00b7 cm<\/p>\n<\/td>\n<\/tr>\n

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Param\u00e8tres m\u00e9caniques<\/p>\n<\/td>\n<\/tr>\n

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Diam\u00e8tre<\/p>\n<\/td>\n

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150,0 \u00b1 0,2 mm<\/p>\n<\/td>\n<\/tr>\n

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\u00c9paisseur<\/p>\n<\/td>\n

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350 \u00b1 25 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

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Orientation plate primaire<\/p>\n<\/td>\n

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[1-100]\u00b15\u00b0<\/p>\n<\/td>\n<\/tr>\n

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Longueur plate primaire<\/p>\n<\/td>\n

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47,5 \u00b1 1,5 mm<\/p>\n<\/td>\n<\/tr>\n

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Plat secondaire<\/p>\n<\/td>\n

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Aucun<\/p>\n<\/td>\n<\/tr>\n

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TTV<\/p>\n<\/td>\n

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\u22645 \u00b5m<\/p>\n<\/td>\n

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\u226410 \u00b5m<\/p>\n<\/td>\n

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\u226415 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

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LTV<\/p>\n<\/td>\n

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\u22643 \u03bcm (5 mm * 5 mm)<\/p>\n<\/td>\n

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\u22645 \u03bcm (5 mm * 5 mm)<\/p>\n<\/td>\n

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\u226410 \u03bcm (5 mm * 5 mm)<\/p>\n<\/td>\n<\/tr>\n

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Arc<\/p>\n<\/td>\n

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-15 \u03bcm ~ 15\u03bcm<\/p>\n<\/td>\n

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-35 \u03bcm ~ 35 \u03bcm<\/p>\n<\/td>\n

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-45 \u03bcm ~ 45 \u03bcm<\/p>\n<\/td>\n<\/tr>\n

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Cha\u00eene<\/p>\n<\/td>\n

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\u226435 \u00b5m<\/p>\n<\/td>\n

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\u226445 \u00b5m<\/p>\n<\/td>\n

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\u226455 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

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Rugosit\u00e9 avant (si-face) (AFM)<\/p>\n<\/td>\n

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Ra\u22640,2 nm (5 \u03bcm * 5 \u03bcm)<\/p>\n<\/td>\n<\/tr>\n

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Structure<\/p>\n<\/td>\n<\/tr>\n

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Densit\u00e9 de micro-<\/p>\n<\/td>\n

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<1 ea \/ cm2<\/p>\n<\/td>\n

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<10 ea \/ cm2<\/p>\n<\/td>\n

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<15 ea \/ cm2<\/p>\n<\/td>\n<\/tr>\n

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Impuret\u00e9s m\u00e9talliques<\/p>\n<\/td>\n

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\u22645E10atoms\/cm2<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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BPB<\/p>\n<\/td>\n

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\u22641500 ea \/ cm2<\/p>\n<\/td>\n

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\u22643000 ea \/ cm2<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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TSD<\/p>\n<\/td>\n

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\u2264500 ea \/ cm2<\/p>\n<\/td>\n

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\u22641000 ea \/ cm2<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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Qualit\u00e9 avant<\/p>\n<\/td>\n<\/tr>\n

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Devant<\/p>\n<\/td>\n

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Si<\/p>\n<\/td>\n<\/tr>\n

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Finition de surface<\/p>\n<\/td>\n

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CMP SI-FACE<\/p>\n<\/td>\n<\/tr>\n

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Particules<\/p>\n<\/td>\n

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\u226460ea \/ plaquette (taille 0,3 \u03bcm)<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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Rayures<\/p>\n<\/td>\n

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\u22645EA \/ MM. Longueur cumulative \u2264 diam\u00e8tre<\/p>\n<\/td>\n

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Longueur cumulatif \u22642 * diam\u00e8tre<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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PELLE \/ PEPES ORANGE \/ TAPPES \/ COMMENTS \/ CRESCHES \/ CONTAMINATION<\/p>\n<\/td>\n

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Aucun<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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Coups de bord \/ retraits \/ fracture \/ plaques hexagonales<\/p>\n<\/td>\n

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Aucun<\/p>\n<\/td>\n<\/tr>\n

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Zones de polytype<\/p>\n<\/td>\n

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Aucun<\/p>\n<\/td>\n

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Zone cumulative\u226420%<\/p>\n<\/td>\n

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Zone cumulative \u2264 30%<\/p>\n<\/td>\n<\/tr>\n

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Marquage laser avant<\/p>\n<\/td>\n

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Aucun<\/p>\n<\/td>\n<\/tr>\n

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Qualit\u00e9 du dos<\/p>\n<\/td>\n<\/tr>\n

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Finition arri\u00e8re<\/p>\n<\/td>\n

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CMP C-FACE<\/p>\n<\/td>\n<\/tr>\n

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Rayures<\/p>\n<\/td>\n

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\u22645ea \/ mm, longueur cumulative\u22642 * diam\u00e8tre<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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D\u00e9fauts arri\u00e8re (puces de bord \/ retraits)<\/p>\n<\/td>\n

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Aucun<\/p>\n<\/td>\n<\/tr>\n

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Rugosit\u00e9 du dos<\/p>\n<\/td>\n

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Ra\u22640,2 nm (5 \u03bcm * 5 \u03bcm)<\/p>\n<\/td>\n<\/tr>\n

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Marquage laser arri\u00e8re<\/p>\n<\/td>\n

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1 mm (du bord sup\u00e9rieur)<\/p>\n<\/td>\n<\/tr>\n

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Bord<\/p>\n<\/td>\n<\/tr>\n

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Bord<\/p>\n<\/td>\n

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Chanfreiner<\/p>\n<\/td>\n<\/tr>\n

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Conditionnement<\/p>\n<\/td>\n<\/tr>\n

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Conditionnement<\/p>\n<\/td>\n

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Pr\u00e9par\u00e9 en \u00e9pi avec un emballage sous vide<\/p>\n

Emballage de cassette multi-wafer<\/p>\n<\/td>\n<\/tr>\n

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*Remarques: \u00abNA\u00bb signifie qu'aucun \u00e9l\u00e9ment de demande non mentionn\u00e9 ne peut se r\u00e9f\u00e9rer au semi-std.<\/p>\n<\/td>\n<\/tr>\n<\/tbody>\n<\/table><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

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\"tech_1_2_size\" <\/img><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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\"Wafers <\/img><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/div>","protected":false},"excerpt":{"rendered":"

850V High Power GaN-on-Si Epi Wafer\u2013 Discover the next generation of semiconductor technology with Semicera\u2019s 850V High Power GaN-on-Si Epi Wafer, designed for superior performance and efficiency in high-voltage applications.<\/p>","protected":false},"featured_media":835,"comment_status":"closed","ping_status":"open","template":"","meta":[],"product_brand":[],"product_cat":[54,26],"product_tag":[],"class_list":{"0":"post-1398","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-gallium-oxide-ga203","7":"product_cat-wafer","9":"first","10":"instock","11":"product-type-simple"},"_links":{"self":[{"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/product\/1398","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/types\/product"}],"replies":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/comments?post=1398"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/media\/835"}],"wp:attachment":[{"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/media?parent=1398"}],"wp:term":[{"taxonomy":"product_brand","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/product_brand?post=1398"},{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/product_cat?post=1398"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/product_tag?post=1398"}],"curies":[{"name":"WP","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}