{"id":1400,"date":"2025-09-11T05:28:53","date_gmt":"2025-09-11T05:28:53","guid":{"rendered":"https:\/\/weitai2.globaldeepsea.site\/product\/ga2o3-epitaxy\/"},"modified":"2026-04-29T15:33:46","modified_gmt":"2026-04-29T07:33:46","slug":"ga2o3-epitaxy","status":"publish","type":"product","link":"https:\/\/www.cn-semiconductorparts.com\/fr\/product\/ga2o3-epitaxy\/","title":{"rendered":"GA2O3 Epitaxy"},"content":{"rendered":"
\n
\n
\n
\n
\n
\n
\n
\n
\n
\n

Seminer<\/em> proudly offers Ga2<\/sub>O3<\/sub> Epitaxy<\/strong>, a state-of-the-art solution designed to push the boundaries of power electronics and optoelectronics. This advanced epitaxial technology leverages the unique properties of Gallium Oxide (Ga2<\/sub>O3<\/sub>) to deliver superior performance in demanding applications.<\/span><\/p>\n

Caract\u00e9ristiques cl\u00e9s:<\/strong><\/span><\/p>\n

\u00a0 \u00a0 \u00a0\u2022\u00a0Exceptional Wide Bandgap<\/strong>: Ga2<\/sub>O3<\/sub> Epitaxy<\/strong> features an ultra-wide bandgap, allowing for higher breakdown voltages and efficient operation in high-power environments.<\/span><\/p>\n

\u00a0 \u00a0 \u00a0\u2022\u00a0<\/strong>High Thermal Conductivity<\/strong>: The epitaxial layer provides excellent thermal conductivity, ensuring stable operation even under high-temperature conditions, making it ideal for high-frequency devices.<\/span><\/p>\n

\u00a0 \u00a0 \u00a0\u2022\u00a0<\/strong>Superior Material Quality<\/strong>: Achieve high crystal quality with minimal defects, ensuring optimal device performance and longevity, especially in critical applications such as power transistors and UV detectors.<\/span><\/p>\n

\u00a0 \u00a0 \u00a0\u2022\u00a0<\/strong>Versatility in Applications<\/strong>: Perfectly suited for power electronics, RF applications, and optoelectronics, providing a reliable foundation for next-generation semiconductor devices.<\/span><\/p>\n

\u00a0<\/p>\n

Discover the potential of Ga2<\/sub>O3<\/sub> Epitaxy<\/strong> with Semicera\u2019s innovative solutions. Our epitaxial products are designed to meet the highest standards of quality and performance, enabling your devices to operate with maximum efficiency and reliability. Choose Semicera for cutting-edge semiconductor technology.<\/span><\/p>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

\n
\n
\n
\n
\n
\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
\n

Articles<\/p>\n<\/td>\n

\n

Production<\/p>\n<\/td>\n

\n

Recherche<\/p>\n<\/td>\n

\n

Factice<\/p>\n<\/td>\n<\/tr>\n

\n

Param\u00e8tres de cristal<\/p>\n<\/td>\n<\/tr>\n

\n

Polytype<\/p>\n<\/td>\n

\n

4H<\/p>\n<\/td>\n<\/tr>\n

\n

Erreur d'orientation de la surface<\/p>\n<\/td>\n

\n

4\u00b10.15\u00b0<\/p>\n<\/td>\n<\/tr>\n

\n

Param\u00e8tres \u00e9lectriques<\/p>\n<\/td>\n<\/tr>\n

\n

Dopant<\/p>\n<\/td>\n

\n

azote de type N<\/p>\n<\/td>\n<\/tr>\n

\n

R\u00e9sistivit\u00e9<\/p>\n<\/td>\n

\n

0,015-0.025ohm \u00b7 cm<\/p>\n<\/td>\n<\/tr>\n

\n

Param\u00e8tres m\u00e9caniques<\/p>\n<\/td>\n<\/tr>\n

\n

Diam\u00e8tre<\/p>\n<\/td>\n

\n

150,0 \u00b1 0,2 mm<\/p>\n<\/td>\n<\/tr>\n

\n

\u00c9paisseur<\/p>\n<\/td>\n

\n

350 \u00b1 25 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

\n

Orientation plate primaire<\/p>\n<\/td>\n

\n

[1-100]\u00b15\u00b0<\/p>\n<\/td>\n<\/tr>\n

\n

Longueur plate primaire<\/p>\n<\/td>\n

\n

47,5 \u00b1 1,5 mm<\/p>\n<\/td>\n<\/tr>\n

\n

Plat secondaire<\/p>\n<\/td>\n

\n

Aucun<\/p>\n<\/td>\n<\/tr>\n

\n

TTV<\/p>\n<\/td>\n

\n

\u22645 \u00b5m<\/p>\n<\/td>\n

\n

\u226410 \u00b5m<\/p>\n<\/td>\n

\n

\u226415 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

\n

LTV<\/p>\n<\/td>\n

\n

\u22643 \u03bcm (5 mm * 5 mm)<\/p>\n<\/td>\n

\n

\u22645 \u03bcm (5 mm * 5 mm)<\/p>\n<\/td>\n

\n

\u226410 \u03bcm (5 mm * 5 mm)<\/p>\n<\/td>\n<\/tr>\n

\n

Arc<\/p>\n<\/td>\n

\n

-15 \u03bcm ~ 15\u03bcm<\/p>\n<\/td>\n

\n

-35 \u03bcm ~ 35 \u03bcm<\/p>\n<\/td>\n

\n

-45 \u03bcm ~ 45 \u03bcm<\/p>\n<\/td>\n<\/tr>\n

\n

Cha\u00eene<\/p>\n<\/td>\n

\n

\u226435 \u00b5m<\/p>\n<\/td>\n

\n

\u226445 \u00b5m<\/p>\n<\/td>\n

\n

\u226455 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

\n

Rugosit\u00e9 avant (si-face) (AFM)<\/p>\n<\/td>\n

\n

Ra\u22640,2 nm (5 \u03bcm * 5 \u03bcm)<\/p>\n<\/td>\n<\/tr>\n

\n

Structure<\/p>\n<\/td>\n<\/tr>\n

\n

Densit\u00e9 de micro-<\/p>\n<\/td>\n

\n

<1 ea \/ cm2<\/p>\n<\/td>\n

\n

<10 ea \/ cm2<\/p>\n<\/td>\n

\n

<15 ea \/ cm2<\/p>\n<\/td>\n<\/tr>\n

\n

Impuret\u00e9s m\u00e9talliques<\/p>\n<\/td>\n

\n

\u22645E10atoms\/cm2<\/p>\n<\/td>\n

\n

N \/ A<\/p>\n<\/td>\n<\/tr>\n

\n

BPB<\/p>\n<\/td>\n

\n

\u22641500 ea \/ cm2<\/p>\n<\/td>\n

\n

\u22643000 ea \/ cm2<\/p>\n<\/td>\n

\n

N \/ A<\/p>\n<\/td>\n<\/tr>\n

\n

TSD<\/p>\n<\/td>\n

\n

\u2264500 ea \/ cm2<\/p>\n<\/td>\n

\n

\u22641000 ea \/ cm2<\/p>\n<\/td>\n

\n

N \/ A<\/p>\n<\/td>\n<\/tr>\n

\n

Qualit\u00e9 avant<\/p>\n<\/td>\n<\/tr>\n

\n

Devant<\/p>\n<\/td>\n

\n

Si<\/p>\n<\/td>\n<\/tr>\n

\n

Finition de surface<\/p>\n<\/td>\n

\n

CMP SI-FACE<\/p>\n<\/td>\n<\/tr>\n

\n

Particules<\/p>\n<\/td>\n

\n

\u226460ea \/ plaquette (taille 0,3 \u03bcm)<\/p>\n<\/td>\n

\n

N \/ A<\/p>\n<\/td>\n<\/tr>\n

\n

Rayures<\/p>\n<\/td>\n

\n

\u22645EA \/ MM. Longueur cumulative \u2264 diam\u00e8tre<\/p>\n<\/td>\n

\n

Longueur cumulatif \u22642 * diam\u00e8tre<\/p>\n<\/td>\n

\n

N \/ A<\/p>\n<\/td>\n<\/tr>\n

\n

PELLE \/ PEPES ORANGE \/ TAPPES \/ COMMENTS \/ CRESCHES \/ CONTAMINATION<\/p>\n<\/td>\n

\n

Aucun<\/p>\n<\/td>\n

\n

N \/ A<\/p>\n<\/td>\n<\/tr>\n

\n

Coups de bord \/ retraits \/ fracture \/ plaques hexagonales<\/p>\n<\/td>\n

\n

Aucun<\/p>\n<\/td>\n<\/tr>\n

\n

Zones de polytype<\/p>\n<\/td>\n

\n

Aucun<\/p>\n<\/td>\n

\n

Zone cumulative\u226420%<\/p>\n<\/td>\n

\n

Zone cumulative \u2264 30%<\/p>\n<\/td>\n<\/tr>\n

\n

Marquage laser avant<\/p>\n<\/td>\n

\n

Aucun<\/p>\n<\/td>\n<\/tr>\n

\n

Qualit\u00e9 du dos<\/p>\n<\/td>\n<\/tr>\n

\n

Finition arri\u00e8re<\/p>\n<\/td>\n

\n

CMP C-FACE<\/p>\n<\/td>\n<\/tr>\n

\n

Rayures<\/p>\n<\/td>\n

\n

\u22645ea \/ mm, longueur cumulative\u22642 * diam\u00e8tre<\/p>\n<\/td>\n

\n

N \/ A<\/p>\n<\/td>\n<\/tr>\n

\n

D\u00e9fauts arri\u00e8re (puces de bord \/ retraits)<\/p>\n<\/td>\n

\n

Aucun<\/p>\n<\/td>\n<\/tr>\n

\n

Rugosit\u00e9 du dos<\/p>\n<\/td>\n

\n

Ra\u22640,2 nm (5 \u03bcm * 5 \u03bcm)<\/p>\n<\/td>\n<\/tr>\n

\n

Marquage laser arri\u00e8re<\/p>\n<\/td>\n

\n

1 mm (du bord sup\u00e9rieur)<\/p>\n<\/td>\n<\/tr>\n

\n

Bord<\/p>\n<\/td>\n<\/tr>\n

\n

Bord<\/p>\n<\/td>\n

\n

Chanfreiner<\/p>\n<\/td>\n<\/tr>\n

\n

Conditionnement<\/p>\n<\/td>\n<\/tr>\n

\n

Conditionnement<\/p>\n<\/td>\n

\n

Pr\u00e9par\u00e9 en \u00e9pi avec un emballage sous vide<\/p>\n

Emballage de cassette multi-wafer<\/p>\n<\/td>\n<\/tr>\n

\n

*Remarques: \u00abNA\u00bb signifie qu'aucun \u00e9l\u00e9ment de demande non mentionn\u00e9 ne peut se r\u00e9f\u00e9rer au semi-std.<\/p>\n<\/td>\n<\/tr>\n<\/tbody>\n<\/table><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

\n
\n
\n
\n
\n
\n
\"tech_1_2_size\" <\/img><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
\n
\n
\n
\n
\n
\n
\"Wafers <\/img><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/div>","protected":false},"excerpt":{"rendered":"

Ga2O3Epitaxy\u2013 Enhance your high-power electronic and optoelectronic devices with Semicera\u2019s Ga2O3Epitaxy, offering unmatched performance and reliability for advanced semiconductor applications.<\/p>","protected":false},"featured_media":826,"comment_status":"closed","ping_status":"open","template":"","meta":[],"product_brand":[],"product_cat":[54,26],"product_tag":[],"class_list":{"0":"post-1400","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-gallium-oxide-ga203","7":"product_cat-wafer","9":"first","10":"instock","11":"product-type-simple"},"_links":{"self":[{"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/product\/1400","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/types\/product"}],"replies":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/comments?post=1400"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/media\/826"}],"wp:attachment":[{"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/media?parent=1400"}],"wp:term":[{"taxonomy":"product_brand","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/product_brand?post=1400"},{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/product_cat?post=1400"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/product_tag?post=1400"}],"curies":[{"name":"WP","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}