{"id":1401,"date":"2025-09-11T05:28:53","date_gmt":"2025-09-11T05:28:53","guid":{"rendered":"https:\/\/weitai2.globaldeepsea.site\/product\/4%e2%80%b3-gallium-oxide-substrates\/"},"modified":"2026-04-29T15:33:47","modified_gmt":"2026-04-29T07:33:47","slug":"4%e2%80%b3-gallium-oxide-substrates","status":"publish","type":"product","link":"https:\/\/www.cn-semiconductorparts.com\/fr\/product\/4\u2033-gallium-oxide-substrates\/","title":{"rendered":"4\u2033 Gallium Oxide Substrates"},"content":{"rendered":"
\n
\n
\n
\n
\n
\n
\n
\n
\n
\n

Seminer<\/em> proudly introduces its 4″ Gallium Oxide Substrates<\/strong>, a groundbreaking material engineered to meet the growing demands of high-performance semiconductor devices. Gallium Oxide (Ga2<\/sub>O3<\/sub>) substrates offer an ultra-wide bandgap, making them ideal for next-generation power electronics, UV optoelectronics, and high-frequency devices.<\/span><\/p>\n

\u00a0<\/p>\n

Caract\u00e9ristiques cl\u00e9s:<\/strong><\/span><\/p>\n

<\/strong>\u00a0 \u00a0 \u00a0\u2022 Ultra-Wide Bandgap<\/strong>: The 4″ Gallium Oxide Substrates<\/strong> boast a bandgap of approximately 4.8 eV, allowing for exceptional voltage and temperature tolerance, significantly outperforming traditional semiconductor materials like silicon.<\/span><\/p>\n

\u00a0 \u00a0 \u00a0\u2022\u00a0<\/strong>High Breakdown Voltage<\/strong>: These substrates enable devices to operate at higher voltages and powers, making them perfect for high-voltage applications in power electronics.<\/span><\/p>\n

\u00a0 \u00a0 \u00a0\u2022\u00a0<\/strong>Superior Thermal Stability<\/strong>: Gallium Oxide substrates offer excellent thermal conductivity, ensuring stable performance under extreme conditions, ideal for use in demanding environments.<\/span><\/p>\n

\u00a0 \u00a0 \u00a0\u2022\u00a0<\/strong>High Material Quality<\/strong>: With low defect densities and high crystal quality, these substrates ensure reliable and consistent performance, enhancing the efficiency and durability of your devices.<\/span><\/p>\n

\u00a0 \u00a0 \u00a0\u2022\u00a0<\/strong>Versatile Application<\/strong>: Suitable for a wide range of applications, including power transistors, Schottky diodes, and UV-C LED devices, enabling innovations in both power and optoelectronic fields.<\/span><\/p>\n

\u00a0<\/p>\n

Explore the future of semiconductor technology with Semicera\u2019s 4″ Gallium Oxide Substrates<\/strong>. Our substrates are designed to support the most advanced applications, providing the reliability and efficiency required for today\u2019s cutting-edge devices. Trust Semicera for quality and innovation in your semiconductor materials.<\/span><\/p>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

\n
\n
\n
\n
\n
\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
\n

Articles<\/p>\n<\/td>\n

\n

Production<\/p>\n<\/td>\n

\n

Recherche<\/p>\n<\/td>\n

\n

Factice<\/p>\n<\/td>\n<\/tr>\n

\n

Param\u00e8tres de cristal<\/p>\n<\/td>\n<\/tr>\n

\n

Polytype<\/p>\n<\/td>\n

\n

4H<\/p>\n<\/td>\n<\/tr>\n

\n

Erreur d'orientation de la surface<\/p>\n<\/td>\n

\n

4\u00b10.15\u00b0<\/p>\n<\/td>\n<\/tr>\n

\n

Param\u00e8tres \u00e9lectriques<\/p>\n<\/td>\n<\/tr>\n

\n

Dopant<\/p>\n<\/td>\n

\n

azote de type N<\/p>\n<\/td>\n<\/tr>\n

\n

R\u00e9sistivit\u00e9<\/p>\n<\/td>\n

\n

0,015-0.025ohm \u00b7 cm<\/p>\n<\/td>\n<\/tr>\n

\n

Param\u00e8tres m\u00e9caniques<\/p>\n<\/td>\n<\/tr>\n

\n

Diam\u00e8tre<\/p>\n<\/td>\n

\n

150,0 \u00b1 0,2 mm<\/p>\n<\/td>\n<\/tr>\n

\n

\u00c9paisseur<\/p>\n<\/td>\n

\n

350 \u00b1 25 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

\n

Orientation plate primaire<\/p>\n<\/td>\n

\n

[1-100]\u00b15\u00b0<\/p>\n<\/td>\n<\/tr>\n

\n

Longueur plate primaire<\/p>\n<\/td>\n

\n

47,5 \u00b1 1,5 mm<\/p>\n<\/td>\n<\/tr>\n

\n

Plat secondaire<\/p>\n<\/td>\n

\n

Aucun<\/p>\n<\/td>\n<\/tr>\n

\n

TTV<\/p>\n<\/td>\n

\n

\u22645 \u00b5m<\/p>\n<\/td>\n

\n

\u226410 \u00b5m<\/p>\n<\/td>\n

\n

\u226415 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

\n

LTV<\/p>\n<\/td>\n

\n

\u22643 \u03bcm (5 mm * 5 mm)<\/p>\n<\/td>\n

\n

\u22645 \u03bcm (5 mm * 5 mm)<\/p>\n<\/td>\n

\n

\u226410 \u03bcm (5 mm * 5 mm)<\/p>\n<\/td>\n<\/tr>\n

\n

Arc<\/p>\n<\/td>\n

\n

-15 \u03bcm ~ 15\u03bcm<\/p>\n<\/td>\n

\n

-35 \u03bcm ~ 35 \u03bcm<\/p>\n<\/td>\n

\n

-45 \u03bcm ~ 45 \u03bcm<\/p>\n<\/td>\n<\/tr>\n

\n

Cha\u00eene<\/p>\n<\/td>\n

\n

\u226435 \u00b5m<\/p>\n<\/td>\n

\n

\u226445 \u00b5m<\/p>\n<\/td>\n

\n

\u226455 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

\n

Rugosit\u00e9 avant (si-face) (AFM)<\/p>\n<\/td>\n

\n

Ra\u22640,2 nm (5 \u03bcm * 5 \u03bcm)<\/p>\n<\/td>\n<\/tr>\n

\n

Structure<\/p>\n<\/td>\n<\/tr>\n

\n

Densit\u00e9 de micro-<\/p>\n<\/td>\n

\n

<1 ea \/ cm2<\/p>\n<\/td>\n

\n

<10 ea \/ cm2<\/p>\n<\/td>\n

\n

<15 ea \/ cm2<\/p>\n<\/td>\n<\/tr>\n

\n

Impuret\u00e9s m\u00e9talliques<\/p>\n<\/td>\n

\n

\u22645E10atoms\/cm2<\/p>\n<\/td>\n

\n

N \/ A<\/p>\n<\/td>\n<\/tr>\n

\n

BPB<\/p>\n<\/td>\n

\n

\u22641500 ea \/ cm2<\/p>\n<\/td>\n

\n

\u22643000 ea \/ cm2<\/p>\n<\/td>\n

\n

N \/ A<\/p>\n<\/td>\n<\/tr>\n

\n

TSD<\/p>\n<\/td>\n

\n

\u2264500 ea \/ cm2<\/p>\n<\/td>\n

\n

\u22641000 ea \/ cm2<\/p>\n<\/td>\n

\n

N \/ A<\/p>\n<\/td>\n<\/tr>\n

\n

Qualit\u00e9 avant<\/p>\n<\/td>\n<\/tr>\n

\n

Devant<\/p>\n<\/td>\n

\n

Si<\/p>\n<\/td>\n<\/tr>\n

\n

Finition de surface<\/p>\n<\/td>\n

\n

CMP SI-FACE<\/p>\n<\/td>\n<\/tr>\n

\n

Particules<\/p>\n<\/td>\n

\n

\u226460ea \/ plaquette (taille 0,3 \u03bcm)<\/p>\n<\/td>\n

\n

N \/ A<\/p>\n<\/td>\n<\/tr>\n

\n

Rayures<\/p>\n<\/td>\n

\n

\u22645EA \/ MM. Longueur cumulative \u2264 diam\u00e8tre<\/p>\n<\/td>\n

\n

Longueur cumulatif \u22642 * diam\u00e8tre<\/p>\n<\/td>\n

\n

N \/ A<\/p>\n<\/td>\n<\/tr>\n

\n

PELLE \/ PEPES ORANGE \/ TAPPES \/ COMMENTS \/ CRESCHES \/ CONTAMINATION<\/p>\n<\/td>\n

\n

Aucun<\/p>\n<\/td>\n

\n

N \/ A<\/p>\n<\/td>\n<\/tr>\n

\n

Coups de bord \/ retraits \/ fracture \/ plaques hexagonales<\/p>\n<\/td>\n

\n

Aucun<\/p>\n<\/td>\n<\/tr>\n

\n

Zones de polytype<\/p>\n<\/td>\n

\n

Aucun<\/p>\n<\/td>\n

\n

Zone cumulative\u226420%<\/p>\n<\/td>\n

\n

Zone cumulative \u2264 30%<\/p>\n<\/td>\n<\/tr>\n

\n

Marquage laser avant<\/p>\n<\/td>\n

\n

Aucun<\/p>\n<\/td>\n<\/tr>\n

\n

Qualit\u00e9 du dos<\/p>\n<\/td>\n<\/tr>\n

\n

Finition arri\u00e8re<\/p>\n<\/td>\n

\n

CMP C-FACE<\/p>\n<\/td>\n<\/tr>\n

\n

Rayures<\/p>\n<\/td>\n

\n

\u22645ea \/ mm, longueur cumulative\u22642 * diam\u00e8tre<\/p>\n<\/td>\n

\n

N \/ A<\/p>\n<\/td>\n<\/tr>\n

\n

D\u00e9fauts arri\u00e8re (puces de bord \/ retraits)<\/p>\n<\/td>\n

\n

Aucun<\/p>\n<\/td>\n<\/tr>\n

\n

Rugosit\u00e9 du dos<\/p>\n<\/td>\n

\n

Ra\u22640,2 nm (5 \u03bcm * 5 \u03bcm)<\/p>\n<\/td>\n<\/tr>\n

\n

Marquage laser arri\u00e8re<\/p>\n<\/td>\n

\n

1 mm (du bord sup\u00e9rieur)<\/p>\n<\/td>\n<\/tr>\n

\n

Bord<\/p>\n<\/td>\n<\/tr>\n

\n

Bord<\/p>\n<\/td>\n

\n

Chanfreiner<\/p>\n<\/td>\n<\/tr>\n

\n

Conditionnement<\/p>\n<\/td>\n<\/tr>\n

\n

Conditionnement<\/p>\n<\/td>\n

\n

Pr\u00e9par\u00e9 en \u00e9pi avec un emballage sous vide<\/p>\n

Emballage de cassette multi-wafer<\/p>\n<\/td>\n<\/tr>\n

\n

*Remarques: \u00abNA\u00bb signifie qu'aucun \u00e9l\u00e9ment de demande non mentionn\u00e9 ne peut se r\u00e9f\u00e9rer au semi-std.<\/p>\n<\/td>\n<\/tr>\n<\/tbody>\n<\/table><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

\n
\n
\n
\n
\n
\n
\"tech_1_2_size\" <\/img><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
\n
\n
\n
\n
\n
\n
\"Wafers <\/img><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/div>","protected":false},"excerpt":{"rendered":"

4\u2033 Gallium Oxide Substrates\u2013 Unlock new levels of efficiency and performance in power electronics and UV devices with Semicera\u2019s high-quality 4\u2033 Gallium Oxide Substrates, designed for cutting-edge semiconductor applications.<\/p>","protected":false},"featured_media":725,"comment_status":"closed","ping_status":"open","template":"","meta":[],"product_brand":[],"product_cat":[54,26],"product_tag":[],"class_list":{"0":"post-1401","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-gallium-oxide-ga203","7":"product_cat-wafer","9":"first","10":"instock","11":"product-type-simple"},"_links":{"self":[{"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/product\/1401","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/types\/product"}],"replies":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/comments?post=1401"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/media\/725"}],"wp:attachment":[{"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/media?parent=1401"}],"wp:term":[{"taxonomy":"product_brand","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/product_brand?post=1401"},{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/product_cat?post=1401"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/product_tag?post=1401"}],"curies":[{"name":"WP","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}