{"id":1419,"date":"2025-09-11T05:29:00","date_gmt":"2025-09-11T05:29:00","guid":{"rendered":"https:\/\/weitai2.globaldeepsea.site\/product\/4%e2%80%b3-6%e2%80%b3-high-purity-semi-insulating-sic-ingot\/"},"modified":"2026-04-29T15:33:38","modified_gmt":"2026-04-29T07:33:38","slug":"4%e2%80%b3-6%e2%80%b3-high-purity-semi-insulating-sic-ingot","status":"publish","type":"product","link":"https:\/\/www.cn-semiconductorparts.com\/fr\/product\/4\u2033-6\u2033-high-purity-semi-insulating-sic-ingot\/","title":{"rendered":"4\u2033 6\u2033 High Purity Semi-Insulating SiC Ingot"},"content":{"rendered":"
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Semicera’s 4\u201d6\u201d High Purity Semi-Insulating SiC Ingots are designed to meet the exacting standards of the semiconductor industry. These ingots are produced with a focus on purity and consistency, making them an ideal choice for high-power and high-frequency applications where performance is paramount.<\/span><\/p>\n

The unique properties of these SiC ingots, including high thermal conductivity and excellent electrical resistivity, make them particularly suited for use in power electronics and microwave devices. Their semi-insulating nature allows for effective heat dissipation and minimal electrical interference, leading to more efficient and reliable components.<\/span><\/p>\n

Semicera employs state-of-the-art manufacturing processes to produce ingots with exceptional crystal quality and uniformity. This precision ensures that each ingot can be reliably used in sensitive applications, such as high-frequency amplifiers, laser diodes, and other optoelectronic devices.<\/span><\/p>\n

Available in both 4-inch and 6-inch sizes, Semicera\u2019s SiC ingots provide the flexibility needed for various production scales and technological requirements. Whether for research and development or mass production, these ingots deliver the performance and durability that modern electronic systems demand.<\/span><\/p>\n

By choosing Semicera’s High Purity Semi-Insulating SiC Ingots, you are investing in a product that combines advanced material science with unparalleled manufacturing expertise. Semicera is dedicated to supporting the innovation and growth of the semiconductor industry, offering materials that enable the development of cutting-edge electronic devices.<\/span><\/p>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

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\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
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Articles<\/p>\n<\/td>\n

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Production<\/p>\n<\/td>\n

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Recherche<\/p>\n<\/td>\n

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Factice<\/p>\n<\/td>\n<\/tr>\n

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Param\u00e8tres de cristal<\/p>\n<\/td>\n<\/tr>\n

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Polytype<\/p>\n<\/td>\n

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4H<\/p>\n<\/td>\n<\/tr>\n

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Erreur d'orientation de la surface<\/p>\n<\/td>\n

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4\u00b10.15\u00b0<\/p>\n<\/td>\n<\/tr>\n

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Param\u00e8tres \u00e9lectriques<\/p>\n<\/td>\n<\/tr>\n

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Dopant<\/p>\n<\/td>\n

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azote de type N<\/p>\n<\/td>\n<\/tr>\n

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R\u00e9sistivit\u00e9<\/p>\n<\/td>\n

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0,015-0.025ohm \u00b7 cm<\/p>\n<\/td>\n<\/tr>\n

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Param\u00e8tres m\u00e9caniques<\/p>\n<\/td>\n<\/tr>\n

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Diam\u00e8tre<\/p>\n<\/td>\n

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150,0 \u00b1 0,2 mm<\/p>\n<\/td>\n<\/tr>\n

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\u00c9paisseur<\/p>\n<\/td>\n

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350 \u00b1 25 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

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Orientation plate primaire<\/p>\n<\/td>\n

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[1-100]\u00b15\u00b0<\/p>\n<\/td>\n<\/tr>\n

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Longueur plate primaire<\/p>\n<\/td>\n

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47,5 \u00b1 1,5 mm<\/p>\n<\/td>\n<\/tr>\n

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Plat secondaire<\/p>\n<\/td>\n

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Aucun<\/p>\n<\/td>\n<\/tr>\n

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TTV<\/p>\n<\/td>\n

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\u22645 \u00b5m<\/p>\n<\/td>\n

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\u226410 \u00b5m<\/p>\n<\/td>\n

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\u226415 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

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LTV<\/p>\n<\/td>\n

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\u22643 \u03bcm (5 mm * 5 mm)<\/p>\n<\/td>\n

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\u22645 \u03bcm (5 mm * 5 mm)<\/p>\n<\/td>\n

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\u226410 \u03bcm (5 mm * 5 mm)<\/p>\n<\/td>\n<\/tr>\n

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Arc<\/p>\n<\/td>\n

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-15 \u03bcm ~ 15\u03bcm<\/p>\n<\/td>\n

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-35 \u03bcm ~ 35 \u03bcm<\/p>\n<\/td>\n

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-45 \u03bcm ~ 45 \u03bcm<\/p>\n<\/td>\n<\/tr>\n

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Cha\u00eene<\/p>\n<\/td>\n

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\u226435 \u00b5m<\/p>\n<\/td>\n

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\u226445 \u00b5m<\/p>\n<\/td>\n

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\u226455 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

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Rugosit\u00e9 avant (si-face) (AFM)<\/p>\n<\/td>\n

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Ra\u22640,2 nm (5 \u03bcm * 5 \u03bcm)<\/p>\n<\/td>\n<\/tr>\n

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Structure<\/p>\n<\/td>\n<\/tr>\n

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Densit\u00e9 de micro-<\/p>\n<\/td>\n

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<1 ea \/ cm2<\/p>\n<\/td>\n

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<10 ea \/ cm2<\/p>\n<\/td>\n

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<15 ea \/ cm2<\/p>\n<\/td>\n<\/tr>\n

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Impuret\u00e9s m\u00e9talliques<\/p>\n<\/td>\n

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\u22645E10atoms\/cm2<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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BPB<\/p>\n<\/td>\n

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\u22641500 ea \/ cm2<\/p>\n<\/td>\n

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\u22643000 ea \/ cm2<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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TSD<\/p>\n<\/td>\n

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\u2264500 ea \/ cm2<\/p>\n<\/td>\n

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\u22641000 ea \/ cm2<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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Qualit\u00e9 avant<\/p>\n<\/td>\n<\/tr>\n

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Devant<\/p>\n<\/td>\n

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Si<\/p>\n<\/td>\n<\/tr>\n

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Finition de surface<\/p>\n<\/td>\n

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CMP SI-FACE<\/p>\n<\/td>\n<\/tr>\n

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Particules<\/p>\n<\/td>\n

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\u226460ea \/ plaquette (taille 0,3 \u03bcm)<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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Rayures<\/p>\n<\/td>\n

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\u22645EA \/ MM. Longueur cumulative \u2264 diam\u00e8tre<\/p>\n<\/td>\n

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Longueur cumulatif \u22642 * diam\u00e8tre<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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PELLE \/ PEPES ORANGE \/ TAPPES \/ COMMENTS \/ CRESCHES \/ CONTAMINATION<\/p>\n<\/td>\n

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Aucun<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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Coups de bord \/ retraits \/ fracture \/ plaques hexagonales<\/p>\n<\/td>\n

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Aucun<\/p>\n<\/td>\n<\/tr>\n

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Zones de polytype<\/p>\n<\/td>\n

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Aucun<\/p>\n<\/td>\n

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Zone cumulative\u226420%<\/p>\n<\/td>\n

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Zone cumulative \u2264 30%<\/p>\n<\/td>\n<\/tr>\n

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Marquage laser avant<\/p>\n<\/td>\n

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Aucun<\/p>\n<\/td>\n<\/tr>\n

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Qualit\u00e9 du dos<\/p>\n<\/td>\n<\/tr>\n

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Finition arri\u00e8re<\/p>\n<\/td>\n

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CMP C-FACE<\/p>\n<\/td>\n<\/tr>\n

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Rayures<\/p>\n<\/td>\n

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\u22645ea \/ mm, longueur cumulative\u22642 * diam\u00e8tre<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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D\u00e9fauts arri\u00e8re (puces de bord \/ retraits)<\/p>\n<\/td>\n

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Aucun<\/p>\n<\/td>\n<\/tr>\n

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Rugosit\u00e9 du dos<\/p>\n<\/td>\n

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Ra\u22640,2 nm (5 \u03bcm * 5 \u03bcm)<\/p>\n<\/td>\n<\/tr>\n

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Marquage laser arri\u00e8re<\/p>\n<\/td>\n

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1 mm (du bord sup\u00e9rieur)<\/p>\n<\/td>\n<\/tr>\n

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Bord<\/p>\n<\/td>\n<\/tr>\n

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Bord<\/p>\n<\/td>\n

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Chanfreiner<\/p>\n<\/td>\n<\/tr>\n

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Conditionnement<\/p>\n<\/td>\n<\/tr>\n

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Conditionnement<\/p>\n<\/td>\n

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Pr\u00e9par\u00e9 en \u00e9pi avec un emballage sous vide<\/p>\n

Emballage de cassette multi-wafer<\/p>\n<\/td>\n<\/tr>\n

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*Remarques: \u00abNA\u00bb signifie qu'aucun \u00e9l\u00e9ment de demande non mentionn\u00e9 ne peut se r\u00e9f\u00e9rer au semi-std.<\/p>\n<\/td>\n<\/tr>\n<\/tbody>\n<\/table><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

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\"tech_1_2_size\" <\/img><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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\"Wafers <\/img><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/div>","protected":false},"excerpt":{"rendered":"

Semicera\u2019s 4\u201d6\u201d High Purity Semi-Insulating SiC Ingots are meticulously crafted for advanced electronic and optoelectronic applications. Featuring superior thermal conductivity and electrical resistivity, these ingots provide a robust foundation for high-performance devices. Semicera ensures consistent quality and reliability in every product.<\/p>","protected":false},"featured_media":996,"comment_status":"closed","ping_status":"open","template":"","meta":[],"product_brand":[],"product_cat":[35,26],"product_tag":[],"class_list":{"0":"post-1419","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-sic-substrate","7":"product_cat-wafer","9":"first","10":"instock","11":"product-type-simple"},"_links":{"self":[{"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/product\/1419","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/types\/product"}],"replies":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/comments?post=1419"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/media\/996"}],"wp:attachment":[{"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/media?parent=1419"}],"wp:term":[{"taxonomy":"product_brand","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/product_brand?post=1419"},{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/product_cat?post=1419"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/product_tag?post=1419"}],"curies":[{"name":"WP","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}