{"id":1506,"date":"2025-09-11T05:29:26","date_gmt":"2025-09-11T05:29:26","guid":{"rendered":"https:\/\/weitai2.globaldeepsea.site\/product\/tantalum-carbide-cvd-coating-guide-ring\/"},"modified":"2026-04-29T15:33:09","modified_gmt":"2026-04-29T07:33:09","slug":"tantalum-carbide-cvd-coating-guide-ring","status":"publish","type":"product","link":"https:\/\/www.cn-semiconductorparts.com\/fr\/product\/tantalum-carbide-cvd-coating-guide-ring\/","title":{"rendered":"Tantalum Carbure CVD Coating Guide Guide"},"content":{"rendered":"

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Semicera propose des rev\u00eatements de carbure de tantale (TAC) sp\u00e9cialis\u00e9s pour divers composants et transporteurs.<\/span> Semicera leading coating process enables tantalum carbide (TaC) coatings to achieve high purity, high temperature stability and high chemical tolerance, improving product quality of SIC\/GAN crystals and EPI layers (Graphite coated TaC susceptor), and extending the life of key reactor components. The use of tantalum carbide TaC coating is to solve the edge problem and improve the quality of crystal growth, and Semicera has breakthrough solved the tantalum carbide coating technology (CVD), reaching the international advanced level.<\/p>\n

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Silicon carbide (SiC) is a key material in the third generation of semiconductors, but its yield rate has been a limiting factor for industry growth. After extensive testing in Semicera’s laboratories, it has been found that sprayed and sintered TaC lacks the necessary purity and uniformity. In contrast, the CVD process ensures a purity level of 5 PPM and excellent uniformity. The use of CVD TaC significantly improves the yield rate of silicon carbide wafers. We welcome discussions <\/span>Tantalum Carbure CVD Coating Guide Guide<\/span> to further reduce the costs of SiC wafers.<\/span><\/p>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

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After years of development, Semicera has conquered the technology of CVD TaC with the joint efforts of the R&D department. Defects are easy to occur in the growth process of SiC wafers, but after using TaC, the difference is significant. Below is a comparison of wafers with and without TaC, as well as Simicera’ parts for single crystal growth.<\/p>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

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\"Revocation <\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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Partie tac pour la croissance monocristal <\/h3>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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\"Le <\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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Graphite avec anneau rev\u00eatu de TAC <\/h3>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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\"微信图片_20240227150045\" <\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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avec et sans tac<\/span> <\/h3>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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\"微信图片_20240227150053\" <\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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Apr\u00e8s avoir utilis\u00e9 TAC (\u00e0 droite)<\/span> <\/h3>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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Moreover, Semicera’s TaC-coated products exhibit a longer service life and greater high-temperature resistance compared to SiC coatings.<\/b> Laboratory measurements have demonstrated that our TaC coatings can consistently perform at temperatures up to 2300 degrees Celsius for extended periods. Below are some examples of our samples:<\/p>\n

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Suspritur enduit de tac <\/h3>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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Graphite avec r\u00e9acteur enduit TAC <\/h3>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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\"Semirara <\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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\"Notre <\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/div>","protected":false},"excerpt":{"rendered":"

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Silicon carbide (SiC) is a key material in the third generation of semiconductors, but its yield rate has been a limiting factor for industry growth. After extensive testing in Semicera’s laboratories, it has been found that sprayed and sintered TaC lacks the necessary purity and uniformity. In contrast, the CVD process ensures a purity level of 5 PPM and excellent uniformity. The use of CVD TaC significantly improves the yield rate of silicon carbide wafers. We welcome discussionsTantalum Carbide CVD Coating Guide Ringto further reduce the costs of SiC wafers.<\/p>","protected":false},"featured_media":938,"comment_status":"closed","ping_status":"open","template":"","meta":[],"product_brand":[],"product_cat":[15],"product_tag":[],"class_list":{"0":"post-1506","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-uncategorized","8":"first","9":"instock","10":"product-type-simple"},"_links":{"self":[{"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/product\/1506","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/types\/product"}],"replies":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/comments?post=1506"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/media\/938"}],"wp:attachment":[{"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/media?parent=1506"}],"wp:term":[{"taxonomy":"product_brand","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/product_brand?post=1506"},{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/product_cat?post=1506"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/product_tag?post=1506"}],"curies":[{"name":"WP","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}