{"id":2037,"date":"2025-09-11T05:32:25","date_gmt":"2025-09-11T05:32:25","guid":{"rendered":"https:\/\/weitai2.globaldeepsea.site\/product\/thermal-field-material-for-silicon-carbide-crystal-growth-porous-tantalum-carbide\/"},"modified":"2026-04-29T15:29:21","modified_gmt":"2026-04-29T07:29:21","slug":"thermal-field-material-for-silicon-carbide-crystal-growth-porous-tantalum-carbide","status":"publish","type":"product","link":"https:\/\/www.cn-semiconductorparts.com\/fr\/product\/thermal-field-material-for-silicon-carbide-crystal-growth-porous-tantalum-carbide\/","title":{"rendered":"Mati\u00e8re de champ thermique pour la croissance des cristaux en carbure de silicium - Carbure de tantale poreux"},"content":{"rendered":"

<\/p>\n

\n
\n
\n
\n
\n
\n
\n
\n
\n
\n

Semicera propose des rev\u00eatements de carbure de tantale (TAC) sp\u00e9cialis\u00e9s pour divers composants et transporteurs.<\/span> Semicera leading coating process enables tantalum carbide (TaC) coatings to achieve high purity, high temperature stability and high chemical tolerance, improving product quality of SIC\/GAN crystals and EPI layers (Graphite coated TaC susceptor), and extending the life of key reactor components. The use of tantalum carbide TaC coating is to solve the edge problem and improve the quality of crystal growth, and Semicera has breakthrough solved the tantalum carbide coating technology (CVD), reaching the international advanced level.<\/p>\n

 <\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
\n
\n
\n
\n
\n
\n

After years of development, Semicera has conquered the technology of CVD TaC with the joint efforts of the R&D department. Defects are easy to occur in the growth process of SiC wafers, but after using TaC, the difference is significant. Below is a comparison of wafers with and without TaC, as well as Semicera’ parts for single crystal growth <\/p>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

\n
\n
\n
\n
\n
\n
\"b917b6b4-7572-47fe-9074-24d33288257c\" <\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
\n
\n

Partie tac pour la croissance monocristal <\/h3>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
\n
\n
\n
\n
\n
\"Le <\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
\n
\n

Graphite avec anneau rev\u00eatu de TAC <\/h3>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
\n
\n
\n
\n
\n
\n
\"微信图片_20240227150045\" <\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
\n
\n

avec et sans tac<\/span> <\/h3>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
\n
\n
\n
\n
\n
\"微信图片_20240227150053\" <\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
\n
\n

Apr\u00e8s avoir utilis\u00e9 TAC (\u00e0 droite)<\/span> <\/h3>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
\n
\n
\n
\n
\n
\n

De plus, la dur\u00e9e de vie des produits de rev\u00eatement TAC de Semicera est plus longue et plus r\u00e9sistante \u00e0 la temp\u00e9rature \u00e9lev\u00e9e que celle du rev\u00eatement SIC. Apr\u00e8s une longue p\u00e9riode de donn\u00e9es de mesure de laboratoire, notre TAC peut fonctionner pendant une longue p\u00e9riode \u00e0 un maximum de 2300 degr\u00e9s Celsius. Voici quelques-uns de nos \u00e9chantillons:<\/p>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

\n
\n
\n
\n
\n
\n
\"3 <\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
\n
\n

Suspritur enduit de tac <\/h3>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
\n
\n
\n
\n
\n
\"Technologie <\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
\n
\n

Graphite avec r\u00e9acteur enduit TAC <\/h3>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
\n
\n
\n
\n
\n
\n
\"微信截图_20240227145010\" <\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
\n
\n

(a) Diagramme sch\u00e9matique du dispositif de culture de lingot monocristallical SIC par m\u00e9thode PVT (b) support de graines en rev\u00eatement TAC (y compris les graines de sic) (C) anneau de guidage de graphite enduit de TAC<\/span> <\/h3>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
\n
\n
\n
\n
\n
\n
\"Zdfvzcfv\" <\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
\n
\n
\n
\n
\n
\n
\"Caract\u00e9ristique <\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
\n
\n
\n
\n
\n
\n
\"Lieu <\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
\n
\n
\n
\"Semirara <\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
\n
\n
\n
\"Machine <\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
\n
\n
\n
\"Traitement <\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
\n
\n
\n
\"Notre <\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/div>","protected":false},"excerpt":{"rendered":"

<\/p>\n

Porous tantalum carbide is mainly used for gas phase component filtration, adjusting local temperature gradient, guiding material flow direction, controlling leakage, etc. It can be used with another solid tantalum carbide (compact) or tantalum carbide coating from Semicera Technology to form local components with different flow conductance.<\/p>","protected":false},"featured_media":1051,"comment_status":"closed","ping_status":"open","template":"","meta":[],"product_brand":[],"product_cat":[63,21],"product_tag":[],"class_list":{"0":"post-2037","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-siliconized-graphite","7":"product_cat-specialty-graphite","9":"first","10":"instock","11":"product-type-simple"},"_links":{"self":[{"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/product\/2037","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/types\/product"}],"replies":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/comments?post=2037"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/media\/1051"}],"wp:attachment":[{"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/media?parent=2037"}],"wp:term":[{"taxonomy":"product_brand","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/product_brand?post=2037"},{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/product_cat?post=2037"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/product_tag?post=2037"}],"curies":[{"name":"WP","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}