{"id":2219,"date":"2025-09-11T05:33:27","date_gmt":"2025-09-11T05:33:27","guid":{"rendered":"https:\/\/weitai2.globaldeepsea.site\/product\/soi-wafers\/"},"modified":"2026-04-29T15:28:09","modified_gmt":"2026-04-29T07:28:09","slug":"soi-wafers","status":"publish","type":"product","link":"https:\/\/www.cn-semiconductorparts.com\/fr\/product\/soi-wafers\/","title":{"rendered":"Soi Wafers"},"content":{"rendered":"

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\"Soi<\/p>\n

Champ de candidature<\/p>\n

1. Circuit int\u00e9gr\u00e9 \u00e0 grande vitesse<\/p>\n

2. Dispositifs micro-ondes<\/p>\n

3. Circuit int\u00e9gr\u00e9 \u00e0 haute temp\u00e9rature<\/p>\n

4. Dispositifs d'alimentation<\/p>\n

5. Circuit int\u00e9gr\u00e9 \u00e0 faible puissance<\/p>\n

6. MEMS<\/p>\n

7. Circuit int\u00e9gr\u00e9 \u00e0 basse tension<\/p>\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
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Article<\/p>\n<\/td>\n

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Argument<\/p>\n<\/td>\n<\/tr>\n

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Dans l'ensemble<\/p>\n<\/td>\n

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Diam\u00e8tre de la tranche
晶圆尺寸(mm)<\/p>\n<\/td>\n

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50\/75\/100\/125\/150\/200mm±25um<\/p>\n<\/td>\n<\/tr>\n

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Arc \/ d\u00e9formation
翘曲度(<um)<\/p>\n<\/td>\n

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<10um<\/p>\n<\/td>\n<\/tr>\n

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Particules
颗粒度(<ea)<\/p>\n<\/td>\n

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0,3UM <30EA<\/p>\n<\/td>\n<\/tr>\n

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Appartements \/ encoche
定位边\/定位槽<\/p>\n<\/td>\n

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Plat ou encoche<\/p>\n<\/td>\n<\/tr>\n

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Exclusion de bord
边缘去除(mm)<\/p>\n<\/td>\n

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\/<\/p>\n<\/td>\n<\/tr>\n

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Calque d'appareil
器件层<\/p>\n<\/td>\n

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Type \/ dopant de la couche de l'appareil
器件层掺杂类型<\/p>\n<\/td>\n

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Type N \/ T-Type
B \/ p \/ sb \/ as<\/p>\n<\/td>\n<\/tr>\n

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Orientation de la couche de dispositif
器件层晶向<\/p>\n<\/td>\n

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\/ \/<\/p>\n<\/td>\n<\/tr>\n

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\u00c9paisseur de la couche de l'appareil
器件层厚度(um)<\/p>\n<\/td>\n

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0,1 ~ 300UM<\/p>\n<\/td>\n<\/tr>\n

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R\u00e9sistivit\u00e9 de la couche de dispositif
器件层电阻率(ohm•cm)<\/p>\n<\/td>\n

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0,001 ~ 100 000 ohm-cm<\/p>\n<\/td>\n<\/tr>\n

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Particules de couche de dispositif
器件层颗粒度(<ea)<\/p>\n<\/td>\n

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<30ea@0.3<\/p>\n<\/td>\n<\/tr>\n

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Couche de p\u00e9riph\u00e9rique TTV
器件层TTV(<um)<\/p>\n<\/td>\n

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<10um<\/p>\n<\/td>\n<\/tr>\n

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Finition de la couche de p\u00e9riph\u00e9rique
器件层表面处理<\/p>\n<\/td>\n

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Brillant<\/p>\n<\/td>\n<\/tr>\n

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BO\u00ceTE<\/p>\n<\/td>\n

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\u00c9paisseur d'oxyde thermique enterr\u00e9
埋氧层厚度(um)<\/p>\n<\/td>\n

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50nm(500Å)~15um<\/p>\n<\/td>\n<\/tr>\n

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Manipuler
衬底<\/p>\n<\/td>\n

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Manipuler le type de tranche \/ dopant
衬底层类型<\/p>\n<\/td>\n

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Type N \/ T-Type
B \/ p \/ sb \/ as<\/p>\n<\/td>\n<\/tr>\n

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Manipuler l'orientation de la tranche
衬底晶向<\/p>\n<\/td>\n

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\/ \/<\/p>\n<\/td>\n<\/tr>\n

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Manipuler la r\u00e9sistivit\u00e9 de la tranche
衬底电阻率(ohm•cm)<\/p>\n<\/td>\n

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0,001 ~ 100 000 ohm-cm<\/p>\n<\/td>\n<\/tr>\n

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Manipuler l'\u00e9paisseur de la tranche
衬底厚度(um)<\/p>\n<\/td>\n

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> 100UM<\/p>\n<\/td>\n<\/tr>\n

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Manipuler la finition de la plaquette
衬底表面处理<\/p>\n<\/td>\n

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Brillant<\/p>\n<\/td>\n<\/tr>\n

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Les plaquettes SOI des sp\u00e9cifications cibles peuvent \u00eatre personnalis\u00e9es en fonction des exigences du client.<\/p>\n<\/td>\n<\/tr>\n<\/tbody>\n<\/table><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

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\"Traitement<\/p>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/div>","protected":false},"excerpt":{"rendered":"

<\/p>\n

La plaquette SOI est une structure en forme de sandwich avec trois couches; Y compris la couche sup\u00e9rieure (couche de dispositif), le milieu de la couche d'oxyg\u00e8ne enfouie (pour la couche SIO2 isolante) et le substrat inf\u00e9rieur (silicium en vrac). Les plaquettes SOI sont produites \u00e0 l'aide de la m\u00e9thode Simox et de la technologie de liaison \u00e0 la plaquette, ce qui permet des couches d'appareils plus minces et plus pr\u00e9cises, une \u00e9paisseur uniforme et une faible densit\u00e9 de d\u00e9fauts.<\/p>","protected":false},"featured_media":963,"comment_status":"closed","ping_status":"open","template":"","meta":[],"product_brand":[],"product_cat":[41,26],"product_tag":[],"class_list":{"0":"post-2219","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-sol-wafer","7":"product_cat-wafer","9":"first","10":"instock","11":"product-type-simple"},"_links":{"self":[{"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/product\/2219","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/types\/product"}],"replies":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/comments?post=2219"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/media\/963"}],"wp:attachment":[{"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/media?parent=2219"}],"wp:term":[{"taxonomy":"product_brand","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/product_brand?post=2219"},{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/product_cat?post=2219"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/product_tag?post=2219"}],"curies":[{"name":"WP","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}